Infineon Technologies F475R07W2H3B51BOMA1

Overview

F475R07W2H3B51BOMA1 from Infineon Technologies is a dual-channel EasyBRIDGE power module integrating one 650 V / 75 A IGBT, one 650 V / 50 A freewheeling diode, one 650 V / 30 A CoolMOS™ MOSFET, one 800 V / 50 A bypass diode, one 650 V / 24 A boost diode, and an integrated NTC thermistor-all in a single PressFIT-mountable Al₂O₃-based package. It delivers low V_CE(sat) (1.40 V typ. @ 37.5 A), low R_DS(on) (42 mΩ typ. @ 30 A), and supports solar inverter DC-AC conversion stages with thermal monitoring.

For engineers reviewing the F475R07W2H3B51BOMA1 datasheet, F475R07W2H3B51BOMA1 pinout, F475R07W2H3B51BOMA1 application, or F475R07W2H3B51BOMA1 equivalent, this module serves as a multi-device integration solution for high-efficiency, space-constrained renewable energy inverters requiring simultaneous IGBT switching, MOSFET high-side control, diode clamping, and real-time junction temperature feedback via NTC.

Technical Context

This module implements a hybrid topology where the IGBT handles main inverter leg switching at up to 150 A peak, while the CoolMOS™ device operates in high-frequency auxiliary roles such as active clamp or auxiliary DC-DC control. The integrated NTC (R₂₅ = 5.0 kΩ, B_25/100 = 3433 K) enables direct thermal feedback without external sensors.

Its PressFIT contact technology eliminates soldering, and the Al₂O₃ substrate ensures low thermal resistance (R_thJC = 0.55 K/W for IGBT, 0.35 K/W for MOSFET). Stray inductance is minimized at 17 nH, supporting fast switching with controlled EMI in solar MPPT and grid-tie applications.

Key Specifications

Pinout & Package

Package: EasyBRIDGE 12-pin PressFIT module with Al₂O₃ ceramic substrate, 39 g mass, and 2.5 kV isolation rating (RMS, 50 Hz, 1 min). Dimensions: 100 mm × 62 mm × 17 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar multi-device power module applications.

Compared with FS75R07W2E4_B11 and FF75R07W2E4_B11, F475R07W2H3B51BOMA1 offers superior integration density, built-in thermal safety, and fault-resilient diode redundancy-justifying its use in next-generation solar and ESS systems where reliability and board space are critical.

Availability

F475R07W2H3B51BOMA1 is available at Aetrix Electronics and suitable for solar string inverters, energy storage bi-directional converters, industrial motor drives, and EV on-board chargers requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for F475R07W2H3B51BOMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

F475R07W2H3B51BOMA1 belongs to the EasyBRIDGE product line, designed specifically for high-power-density renewable energy and industrial drive applications requiring integrated multi-device functionality and PressFIT assembly.

FAQ

What is the maximum allowable gate drive voltage for the IGBT section?

The IGBT gate-emitter peak voltage rating is ±20 V. Operation beyond this limit risks permanent oxide damage. Recommended gate drive is ±15 V with external series resistance (RGon/RGoff = 8.2 Ω typical) to control dV/dt and switching losses. Gate threshold voltage is 4.9–6.5 V, ensuring clean turn-on at 15 V drive.

Does the module include isolation between power terminals and heatsink?

Yes. The module features reinforced basic insulation per IEC 61140 (Class 1), with 2.5 kV RMS isolation test voltage (50 Hz, 1 min). Creepage distance from terminal to heatsink is 11.5 mm, and clearance is 10.0 mm-meeting EN 60747-5-2 requirements for 650 V systems.

How is the NTC thermistor calibrated, and what is its accuracy?

The integrated NTC has R₂₅ = 5.0 kΩ ±1% and B_25/100 = 3433 K. Its deviation at 100°C is ±5% of R₁₀₀ (493 Ω), enabling ±1.5°C temperature measurement accuracy from –40°C to +150°C when used with standard 25°C reference calibration in the host controller.

Can the CoolMOS™ and IGBT sections be driven independently with separate gate signals?

Yes. The module provides three independent gate terminals (G1, G2, G3) with electrically isolated internal gate resistors (RG_int = 0 Ω for IGBTs, 0.7 Ω for CoolMOS™). This allows fully independent timing control-e.g., delaying CoolMOS™ turn-on to avoid shoot-through in active-clamp configurations.