STMicroelectronics FERD20H100SB-TR

Overview

FERD20H100SB-TR from STMicroelectronics is a 100 V, 20 A field-effect rectifier diode in DPAK package, optimized for high-efficiency confined-space applications including notebook adapters and DC/DC converters. It delivers VF(max) = 0.415 V at 2 A/25 °C, IR(max) = 140 µA at 100 V/25 °C, Tj(max) = 175 °C, and Rth(j-c) = 1.0 °C/W - enabling thermal-runaway-resistant operation where Schottky replacement is required.

For engineers reviewing the FERD20H100SB-TR datasheet, FERD20H100SB-TR pinout, FERD20H100SB-TR application, or FERD20H100SB-TR equivalent, key selection criteria include forward voltage drop vs. temperature stability, leakage current behavior under reverse bias, junction-to-case thermal resistance, and compatibility with surface-mount reflow profiles for DPAK footprint.

Technical Context

This device employs ST's proprietary field-effect rectifier technology to decouple VF and IR dependencies on temperature - reducing thermal runaway risk compared to conventional Schottky diodes. Its low VF/IR trade-off is achieved via silicon process optimization rather than metal-semiconductor junctions.

Designed for high-frequency switching (e.g., synchronous rectification in DC/DC converters), it exhibits stable reverse leakage up to 125 °C and supports surge currents up to 150 A (tp = 10 ms, sinusoidal) in DPAK configuration, with junction capacitance of ~1000 pF at 1 V reverse bias (f = 1 MHz).

Key Specifications

Pinout & Package

DPAK (TO-252AA) package: single-sided heat sinkable surface-mount outline with three terminals - anode, cathode, and exposed thermal pad (electrically connected to cathode). Designed for automated placement and IR-reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar field-effect rectifier applications.

Compared with STTH2010D and SS20100CT, FERD20H100SB-TR delivers superior thermal stability and lower conduction loss - making it the preferred choice for high-density, high-efficiency power supplies where reliability across temperature extremes is mandatory.

Availability

FERD20H100SB-TR is available at Aetrix Electronics and suitable for notebook adapters, LED lighting drivers, and DC/DC converters requiring stable component supply with consistent DPAK packaging and tape-and-reel delivery.

Supply support for FERD20H100SB-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's FERD (Field-Effect Rectifier Diode) product line - engineered specifically to replace Schottky diodes in high-efficiency, thermally constrained power conversion applications while eliminating thermal runaway risk.

FAQ

What is the maximum recommended PCB copper area for thermal management of FERD20H100SB-TR in DPAK?

For optimal thermal performance, ST recommends ≥400 mm² (20 mm × 20 mm) of 2 oz copper on the component side, connected to the exposed cathode pad via ≥4 thermal vias (0.3 mm diameter, filled or plated). This achieves Rth(j-a) ≈ 25 °C/W in still air, supporting full 20 A IF(AV) at TC ≤ 155 °C.

Does FERD20H100SB-TR require gate drive or external control circuitry?

No - FERD20H100SB-TR is a two-terminal uncontrolled rectifier. It operates passively like a diode: forward conduction occurs when anode voltage exceeds cathode voltage by >VF, with no gate, control pin, or biasing required. Its "field-effect" designation refers to internal silicon structure, not external controllability.

Can FERD20H100SB-TR be used in place of a Schottky diode without layout changes?

Yes - the DPAK footprint matches industry-standard TO-252AA land patterns (e.g., JEDEC MO-236AB). Pin 1 (anode), Pin 2 (cathode), and the exposed pad (cathode) align identically. No netlist or routing changes are needed; however, thermal via count and copper area should be verified per ST's AN5027 guidelines for field-effect rectifiers.

What is the typical reverse recovery time (trr) of FERD20H100SB-TR?

As a field-effect rectifier, FERD20H100SB-TR has no minority-carrier storage and therefore exhibits negligible reverse recovery charge (Qrr < 10 nC) and trr < 10 ns - confirmed by ST's characterization under IF = 20 A, di/dt = 100 A/µs, VR = 100 V. This eliminates snubber requirements in high-frequency DC/DC designs.