STMicroelectronics FERD20H100STS

Overview

FERD20H100STS from STMicroelectronics is a 100 V, 20 A field-effect rectifier diode in TO-220AB package, optimized for high-efficiency confined-space DC/DC converters and MPPT solar charge controllers. It delivers VF(max) = 0.415 V at 2 A/25 °C, IR(max) = 140 µA at 100 V/25 °C, Tj(max) = 175 °C, and Rth(j-c) = 1.0 °C/W - enabling thermal stability where Schottky replacement is required.

For engineers reviewing the FERD20H100STS datasheet, FERD20H100STS pinout, FERD20H100STS application, or FERD20H100STS equivalent, this page provides verified package mapping (TO-220AB), junction-to-case thermal resistance, leakage vs. temperature behavior, forward conduction loss equation, and validated alternatives for high-frequency rectification in notebook adapters and LED lighting systems.

Technical Context

This device uses ST's proprietary field-effect rectifier technology to decouple VF and IR dependencies on temperature - reducing thermal runaway risk versus conventional Schottky diodes. Its low VF and ultra-low IR are maintained across Tj = 25–125 °C, with IR rising only to 8–16 mA at 125 °C/100 V.

The TO-220AB variant supports IF(AV) = 20 A at TC = 155 °C and IFSM = 250 A (10 ms sine), with Rth(j-c) = 1.0 °C/W. Conduction losses follow P = 0.415 × IF(AV) + 0.019 × IF²(RMS), confirmed in AN604 for accurate power budgeting.

Key Specifications

Pinout & Package

Package: TO-220AB - insulated metal tab, 3-pin through-hole, 1.38 g weight, UL 94 V0 epoxy, recommended torque 0.55 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar field-effect rectifier applications.

Compared with STTH2010D and SS20100CT, FERD20H100STS uniquely combines sub-0.42 V VF, <16 mA IR at 125 °C, and 175 °C Tj rating - making it the sole choice for uncooled, high-density 100 V rectification where thermal margin and standby loss are critical.

Availability

FERD20H100STS is available at Aetrix Electronics and suitable for notebook adapter secondary-side rectification, MPPT solar charge controller output stages, and industrial DC/DC converter bias windings requiring stable component supply across multi-year production cycles.

Supply support for FERD20H100STS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

FERD20H100STS belongs to ST's field-effect rectifier (FERD) product line - engineered specifically to replace Schottky diodes in high-voltage, high-temperature rectification where thermal stability and low leakage are non-negotiable.

FAQ

Is FERD20H100STS pin-compatible with standard TO-220AB Schottky diodes?

Yes - FERD20H100STS uses identical TO-220AB mechanical footprint and pinout (Anode–Cathode–Tab), with Tab electrically tied to Cathode. No PCB redesign is needed for drop-in replacement of 100 V Schottky diodes like SS20100CT, provided thermal interface and mounting torque (0.55 N·m) comply with ST's specification.

What is the maximum allowable case temperature for continuous 20 A operation?

The datasheet specifies IF(AV) = 20 A at TC = 155 °C for TO-220AB package. Operation above 155 °C case temperature requires derating per Figure 1; at TC = 165 °C, IF(AV) drops to 17.5 A. Exceeding 155 °C without derating risks exceeding Tj(max) = 175 °C under worst-case thermal resistance conditions.

Does FERD20H100STS require a heatsink in a 65 W notebook adapter?

Yes - even with Rth(j-c) = 1.0 °C/W, 20 A conduction at VF ≈ 0.6 V generates ~12 W dissipation. Without a heatsink, junction temperature would exceed 175 °C within seconds. A 15 cm² aluminum heatsink (Rth(j-a) ≈ 12 °C/W) keeps Tj < 120 °C at full load, per Figure 8.

How does its reverse recovery behavior compare to ultrafast diodes like STTH2010D?

FERD20H100STS is a majority-carrier device with no minority-carrier storage - reverse recovery time is effectively zero (<5 ns). Unlike STTH2010D (trr = 35 ns), it generates no reverse recovery current spike, eliminating associated EMI and snubber losses in >100 kHz DC/DC topologies.