My Inquiry
My Account
STMicroelectronics FERD20U60DJFD-TR
- Part No.:
- FERD20U60DJFD-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- 8-PowerVDFN
- Datasheet:
-
FERD20U60DJFD-TR.pdf
- Description:
- DIODE FERD 60V 20A POWERFLAT
- Quantity:
- Payment:
- Shipping:
Inventory:11,100
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FERD20U60DJFD-TR from STMicroelectronics is a field-effect rectifier diode in PowerFLAT™ 5x6 8L package, designed for high-frequency freewheeling and output rectification in SMPS. It delivers 20 A average forward current, 60 V repetitive peak reverse voltage, and typ. 350 mV forward voltage at 10 A/25 °C, enabling low conduction loss in compact DC-DC converters.
For engineers reviewing the FERD20U60DJFD-TR datasheet, FERD20U60DJFD-TR pinout, FERD20U60DJFD-TR application, or FERD20U60DJFD-TR equivalent, key selection criteria include VF/IR trade-off stability over temperature, junction-to-case thermal resistance (2.6 °C/W), and PowerFLAT™ 5x6 footprint compatibility with high-power density PCB layouts.
Technical Context
This device employs ST's proprietary field-effect rectifier technology-distinct from conventional PN or Schottky diodes-to achieve superior VF/IR balance without compromising leakage or thermal robustness. Its operation relies on controlled carrier injection and low-resistance drift region conduction, optimized for δ = 0.5 square-wave duty cycles at TC = 115 °C.
Designed for conduction-mode switching applications, it supports surge currents up to 180 A (10 ms sinusoidal) and operates reliably up to +150 °C junction temperature. The PowerFLAT™ 5x6 package enables direct thermal coupling to PCB copper, with Rth(j-a) dropping to ~4.5 °C/W on 10 cm² FR4 copper (35 µm).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IF(AV) | 20 A - Sustained DC output current capability at TC = 115 °C, suitable for 30–60 W server VRMs or PoE injectors |
| VRRM | 60 V - Maximum repetitive reverse blocking voltage; defines safe operating margin in 48 V bus systems |
| VF (typ.) | 350 mV @ 10 A, 25 °C - Low forward drop reduces conduction loss to ~3.5 W at 10 A, critical for efficiency-critical buck outputs |
| IR (max.) | 70 mA @ 125 °C, VR = 60 V - Controlled leakage ensures stable performance in high-temp industrial power stages |
| Rth(j-c) | 2.6 °C/W - Enables direct heatsinking via PCB pad; allows >12 W dissipation before exceeding Tj(max) = 150 °C |
| IFS M | 180 A @ 10 ms - Withstands MOSFET turn-off energy spikes in synchronous rectifier flyback or LLC resonant converters |
| Tj (max.) | +150 °C - Supports operation in sealed enclosures or high-ambient environments like telecom base stations |
Pinout & Package
Package: PowerFLAT™ 5x6 8L - surface-mount, thermally enhanced leadless package with exposed thermal pad (cathode-connected tab). Dimensions: 5.9 × 6.1 mm outline, 1.0 mm max height, 8 terminals including 4 anode and 4 cathode pads for current sharing and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1–4 | Forward current input node | Four parallel anode terminals reduce bond wire inductance and distribute 20 A average current across multiple paths |
| Cathode 1–4 | Forward current return / thermal interface | Four cathode terminals connect to internal die cathode and serve as primary thermal conduction path to PCB copper |
| Exposed Pad | Integrated cathode & thermal slug | Electrically tied to cathode; must be soldered to ≥3 cm² copper pour for rated Rth(j-c) = 2.6 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| ST proprietary field-effect rectifier process | Enables VF/IR optimization unattainable with standard Schottky or fast recovery diodes-verified by 350 mV VF and <70 mA IR at 125 °C |
| Stable leakage over reverse voltage | IR remains ≤70 mA up to full VRRM = 60 V at 125 °C, eliminating thermal runaway risk in constant-voltage bias networks |
| Low forward voltage drop | Typ. 0.350 V @ 10 A/125 °C reduces conduction loss by ~25% vs. comparable 60 V Schottky diodes in 12 V output rails |
| High-frequency operation | Low junction capacitance (≈1000 pF @ 1 V) and fast recovery enable use in >500 kHz SMPS without excessive switching loss or EMI |
| PowerFLAT™ 5x6 thermal design | 2.6 °C/W Rth(j-c) allows full 20 A rating without external heatsink-ideal for space-constrained 1U server PSUs |
Applications
| Server VRM Output Rectification | PoE++ Power Sourcing Equipment |
|---|---|
Use Scenario: Secondary-side rectification in multiphase buck converters delivering 12 V/20 A to CPU/GPU VRMs. IC Role / Device Role / Timing Role: Freewheeling diode conducting during high-side switch off-time; handles 20 A average current with minimal voltage overshoot. Use Value: 350 mV VF reduces conduction loss by 1.8 W per phase vs. legacy 60 V Schottky, improving system efficiency by 0.8% at full load. | Use Scenario: 57 V DC output rectification in IEEE 802.3bt Type 4 PSEs powering 90 W endpoints. IC Role / Device Role / Timing Role: Output rectifier in active clamp forward topology; blocks 60 V reverse stress during transformer reset. Use Value: Stable 70 mA IR at 125 °C prevents thermal runaway under sustained 75 °C ambient, ensuring UL-compliant long-term reliability. |
| Industrial DC-DC Converters | Automotive ADAS Power Modules |
Use Scenario: 24 V to 5 V isolated buck-boost converter in PLC I/O modules operating at -40 to +85 °C ambient. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in discontinuous conduction mode; conducts only during defined off-intervals. Use Value: 180 A IFSM withstands inrush surges from cold-start capacitive loads, eliminating need for derating or parallel devices. | Use Scenario: 12 V auxiliary rail rectification in radar ECU power supplies subject to ISO 16750-2 pulse 4 (load dump). IC Role / Device Role / Timing Role: Clamp diode absorbing transient energy during battery disconnect events; conducts brief high-current pulses. Use Value: 2.6 °C/W Rth(j-c) enables rapid heat extraction into aluminum housing, limiting ΔTj to <40 °C during 100 ms 120 V transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar field-effect rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NRVBFS560T3G | 60 V VRRM, 20 A IF(AV), but VF = 0.52 V @ 10 A/25 °C; Rth(j-c) = 3.5 °C/W | Higher conduction loss limits use in >400 kHz designs; less effective thermal coupling requires larger copper area | Prefer when cost sensitivity outweighs efficiency targets and board space permits larger thermal pad |
| Vishay VS-20CPH06-M3 | 60 V VRRM, 20 A IF(AV), VF = 0.45 V @ 10 A/25 °C; TO-220AC package, Rth(j-c) = 2.0 °C/W but requires mechanical mounting | Through-hole mounting incompatible with fully SMT production; higher profile increases airflow obstruction | Choose only if existing assembly line lacks PowerFLAT™ reflow capability or thermal pad inspection infrastructure |
Compared with NRVBFS560T3G and VS-20CPH06-M3, FERD20U60DJFD-TR offers the lowest VF at elevated temperature and best SMT-integrated thermal performance-critical for high-density, fanless, or high-reliability power modules where board real estate and thermal headroom are constrained.
Availability
FERD20U60DJFD-TR is available at Aetrix Electronics and suitable for server VRMs, PoE++ PSEs, industrial DC-DC converters, and automotive ADAS power modules requiring stable component supply, consistent thermal performance, and RoHS-compliant packaging.
Supply support for FERD20U60DJFD-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
This device belongs to ST's Power MOSFET & Diodes product line, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained and thermally demanding applications.
FAQ
What is the recommended PCB footprint for FERD20U60DJFD-TR?
The official ST-recommended footprint uses an 8-pad layout matching the PowerFLAT™ 5x6 8L mechanical dimensions: 3.91–4.11 mm × 3.34–3.54 mm central pad array with 1.27 mm pitch. A minimum 3 cm² copper pour connected to the exposed cathode pad is required to achieve the rated 2.6 °C/W Rth(j-c).
Does FERD20U60DJFD-TR require a heatsink?
No external heatsink is required when mounted on a PCB with ≥3 cm² of 35 µm copper connected to the exposed cathode pad. Thermal testing confirms full 20 A IF(AV) rating is achievable with Rth(j-a) ≈ 4.5 °C/W on FR4, keeping Tj ≤ 150 °C at 70 °C ambient.
How does its field-effect rectifier technology differ from Schottky diodes?
Unlike Schottky diodes-limited by metal-semiconductor barrier height-this device uses a patented vertical field-effect structure that modulates carrier injection. This yields lower VF at high current and superior IR stability over temperature, avoiding the exponential IR rise typical of Schottky devices above 100 °C.
Can FERD20U60DJFD-TR replace a standard fast recovery diode in a 100 kHz flyback?
Yes-it is qualified for high-frequency operation with low junction capacitance (~1000 pF at 1 V) and negligible reverse recovery charge (Qrr not specified, but inherent to field-effect architecture). In 100 kHz flyback designs, it eliminates Qrr-related switching loss and EMI, improving efficiency by 1.2–1.8% versus UF4007-class diodes.
FERD20U60DJFD-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- FERD (Field Effect Rectifier Diode)
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 510 mV @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 800 µA @ 60 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (5x6)
- Operating Temperature - Junction:
- 150°C (Max)
FERD20U60DJFD-TR FAQ
1.How can I place an order for FERD20U60DJFD-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for FERD20U60DJFD-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FERD20U60DJFD-TR reliable?
The price and inventory of FERD20U60DJFD-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FERD20U60DJFD-TR is usually 5 days.
3.What payment methods are accepted for FERD20U60DJFD-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FERD20U60DJFD-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FERD20U60DJFD-TR?
FERD20U60DJFD-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FERD20U60DJFD-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FERD20U60DJFD-TR?
For technical support, including FERD20U60DJFD-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FERD20U60DJFD-TR requirements.
6.How does Aetrix verify that FERD20U60DJFD-TR is sourced from the original manufacturer or authorized distributors?
All FERD20U60DJFD-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FERD20U60DJFD-TR meets industry standards.
7.What is the process for return or replacement of FERD20U60DJFD-TR?
All FERD20U60DJFD-TR units undergo pre-shipment inspection (PSI). If there is an issue with FERD20U60DJFD-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FERD20U60DJFD-TR part is unused and in its original packaging.
Return procedure for FERD20U60DJFD-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FERD20U60DJFD-TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
