STMicroelectronics FERD30H60CG-TR

Overview

FERD30H60CG-TR from STMicroelectronics is a 60 V field-effect rectifier diode in D²PAK package, optimized for high-efficiency, thermally constrained adapter and charger applications. It delivers 30 A total average forward current (2 × 15 A per diode), 0.41 V typical forward voltage at 3 A/25 °C, 175 °C max junction temperature, and stable leakage current up to 125 °C.

For engineers reviewing the FERD30H60CG-TR datasheet, FERD30H60CG-TR pinout, FERD30H60CG-TR application, or FERD30H60CG-TR equivalent, key selection criteria include conduction loss modeling (P = 0.320 × IF(AV) + 0.019 × IF²(RMS)), thermal resistance (Rth(j-c) = 0.9 °C/W total), reverse leakage behavior at 45 V/125 °C, and TO-220AB vs. D²PAK mounting constraints.

Technical Context

This dual-diode rectifier uses ST's proprietary field-effect rectifier process to achieve superior VF/IR trade-off on fixed silicon area. Its architecture eliminates minority-carrier storage delay, enabling true high-frequency switching operation without reverse recovery tail current.

Each die operates independently with isolated anode/cathode terminals. The device is rated for 250 A non-repetitive surge current (10 ms sinusoidal) and requires heatsink coupling via the exposed drain tab - thermal performance depends critically on PCB copper area under the tab per Figure 7.

Key Specifications

Pinout & Package

D²PAK (TO-263) package with exposed drain tab (cathode connection), three terminals: two anodes (A1, A2) and one common cathode (K). Mounting requires soldering the tab to ≥20 cm² of 35 µm copper for Rth(j-a) ≤ 25 °C/W (per Fig. 7).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar field-effect rectifier applications.

Compared with STTH30L06CW and NRVB3060CT, FERD30H60CG-TR provides 0.24 V lower typical VF at 15 A and 50% lower IR at 125 °C, enabling higher power density in thermally limited D²PAK-based designs without sacrificing surge robustness.

Availability

FERD30H60CG-TR is available at Aetrix Electronics and suitable for USB PD adapters, laptop AC-DC adapters, and industrial wall chargers requiring stable component supply, long-life thermal performance, and D²PAK-mounting compatibility.

Supply support for FERD30H60CG-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's high-efficiency field-effect rectifier product line, engineered specifically to replace Schottky diodes in high-frequency, high-density AC-DC and DC-DC converters where thermal and electrical performance are co-constrained.

FAQ

What is the recommended PCB footprint for FERD30H60CG-TR?

Per Figure 10 in the datasheet, the D²PAK footprint requires a 7.5 mm × 10.0 mm thermal pad with 0.25 mm solder mask clearance, three 1.2 mm diameter plated-through holes aligned to the tab mounting points, and ≥20 cm² of 35 µm copper pour connected to the cathode tab for optimal Rth(j-a) performance.

Can FERD30H60CG-TR be used in place of a standard Schottky diode?

Yes - it replaces Schottkys in secondary-side rectification with identical pinout and voltage rating, but offers lower VF and zero Qrr. No gate drive or control circuitry is needed; it operates as a passive rectifier. Layout changes may be required to accommodate D²PAK thermal pad requirements.

What is the maximum allowable mounting torque for the D²PAK tab?

The datasheet specifies a recommended torque of 0.55 N·m and absolute maximum of 0.6 N·m for M3 screws securing the D²PAK tab to the heatsink. Exceeding 0.6 N·m risks cracking the molded package or damaging internal wire bonds, leading to premature thermal failure.

How does conduction loss compare between FERD30H60CG-TR and a 45 V Schottky at 15 A?

Using the provided equation P = 0.320 × IF(AV) + 0.019 × IF²(RMS), FERD30H60CG-TR dissipates ~1.92 W at 15 A, while a typical 45 V Schottky with VF = 0.55 V dissipates ~8.25 W - a 77% reduction in conduction loss under identical conditions.