STMicroelectronics FERD30M45CR

Overview

FERD30M45CR from STMicroelectronics is a dual-center-tap field-effect rectifier in I2PAK package, rated for 45 V repetitive peak reverse voltage and 2 × 15 A average forward current per diode at Tc = 155 °C. It delivers low forward voltage drop (0.35 V typ. at 7.5 A, 125 °C), stable leakage current up to 50 mA at 125 °C/45 V, and supports high-frequency switching in solar bypass junction boxes and SMPS.

For engineers reviewing the FERD30M45CR datasheet, FERD30M45CR pinout, FERD30M45CR application, or FERD30M45CR equivalent, key selection criteria include thermal resistance (Rth(j-c) = 1.6 °C/W per diode), junction temperature limit (175 °C), dual-diode center-tap configuration, and I2PAK mechanical compatibility with TO-220AB footprint variants.

Technical Context

This device integrates two independent Schottky-like rectifying elements in a single monolithic die with shared cathode terminal (K) and separate anodes (A1, A2), enabling center-tap topology without external wiring. Its proprietary process ensures minimal VF drift over temperature and stable IR across full VRRM range.

Thermal design relies on conduction cooling via case mounting; Rth(j-c) is specified per diode (1.6 °C/W), while total device Rth(j-c) is 1.05 °C/W. The 200 °C maximum junction temperature rating applies only to D²PAK under DC forward mode with no reverse bias - not applicable to FERD30M45CR's I2PAK variant.

Key Specifications

Pinout & Package

Package: I2PAK (TO-262), surface-mount variant with isolated tab, compatible with TO-220AB footprint but optimized for automated assembly and thermal performance. Weight: 1.4 g. ECOPACK® compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-center-tap rectifier applications.

Compared with STTH30L04D and MBR3045CT, FERD30M45CR offers superior thermal efficiency (1.6 °C/W vs. ≥2.0 °C/W), lower VF (0.35 V vs. ≥0.52 V), and I2PAK packaging for automated assembly - making it optimal for space-constrained, thermally sensitive solar and SMPS applications.

Availability

FERD30M45CR is available at Aetrix Electronics and suitable for solar bypass junction boxes, switch-mode power supply output stages, and industrial DC power distribution systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for FERD30M45CR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

FERD30M45CR belongs to ST's Field Effect Rectifier (FERD) product line, engineered specifically for high-reliability, low-loss rectification in photovoltaic bypass and high-frequency power conversion applications.

FAQ

What is the thermal resistance from junction to case for FERD30M45CR?

The junction-to-case thermal resistance (Rth(j-c)) is 1.6 °C/W per diode, measured with the device mounted on a standard heatsink using 0.8–1.0 N·m torque. Total device Rth(j-c) is 1.05 °C/W. This value is validated per JEDEC JESD51-14 and applies to the I2PAK package under conduction-cooled conditions.

Can FERD30M45CR replace standard Schottky diodes in existing TO-220 designs?

Yes - the I2PAK footprint matches TO-220AB outline dimensions (per Figure 10 and Table 7), allowing drop-in PCB replacement if pad layout accommodates the slightly longer leadframe. However, thermal interface design must account for different mounting hole geometry and torque spec (0.8–1.0 N·m).

Is FERD30M45CR qualified for automotive applications?

No - ST explicitly states FERD30M45CR is not designed or authorized for automotive, safety-critical, or aerospace use. It carries no AEC-Q101 qualification and lacks automotive-grade screening, traceability, or extended temperature validation beyond 175 °C junction limit.

What is the maximum continuous forward current per diode at 100 °C case temperature?

At Tc = 100 °C, the maximum average forward current per diode is 22 A, derived from linear derating from 15 A at 155 °C using the curve in Figure 2. This assumes δ = 0.5 duty cycle and proper heatsinking to maintain case temperature stability.