Diodes Incorporated FES1DEQ-7

Overview

FES1DEQ-7 from Diodes Incorporated is an AEC-Q101-qualified ultra-fast recovery rectifier diode in DO-219AA package, rated for 200 V peak reverse voltage, 1 A average forward current, and 25 ns reverse recovery time. It serves as a boost diode in automotive PFC circuits and as a secondary rectifier/freewheeling diode in high-frequency DC-DC converters operating up to +150°C junction temperature.

For engineers reviewing the FES1DEQ-7 datasheet, FES1DEQ-7 pinout, FES1DEQ-7 application, or FES1DEQ-7 equivalent, key selection criteria include its 0.92 V max forward voltage at 1 A, 5 µA max reverse leakage at 200 V/25°C, DO-219AA low-profile footprint, AEC-Q101 qualification, and suitability for automotive-grade power conversion where thermal robustness and fast switching are critical.

Technical Context

The FES1DEQ-7 employs glass-passivated silicon die construction to achieve stable reverse characteristics and low leakage across temperature. Its superfast 25 ns recovery time enables operation in high-frequency (>100 kHz) switching topologies without excessive switching loss or voltage overshoot.

Thermal design is supported by R_θJC = 55°C/W and R_θJL = 45°C/W, allowing efficient heat transfer to PCB copper or external heatsinking. The device operates from –55°C to +150°C, meeting under-hood automotive ambient requirements when properly mounted on thermally enhanced pads.

Key Specifications

Pinout & Package

DO-219AA surface-mount package: 2-terminal, single-diode configuration with cathode band marking. Dimensions: 2.80 mm × 1.90 mm × 0.60 mm (L × W × H); weight ≈ 0.017 g; matte tin-plated copper leadframe; RoHS-compliant, halogen-free molding compound (UL 94V-0).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH1R02UFY and RB050M-30, the FES1DEQ-7 uniquely combines AEC-Q101 qualification, 200 V rating, 25 ns recovery, and DO-219AA packaging-making it the only drop-in solution for automotive PFC and high-temp DC-DC rectification where qualification, size, and speed are jointly constrained.

Availability

FES1DEQ-7 is available at Aetrix Electronics and suitable for automotive on-board chargers, LED backlight boost converters, industrial auxiliary power supplies, and solenoid driver freewheeling circuits requiring stable component supply, long-lifecycle assurance, and AEC-Q101 compliance.

Supply support for FES1DEQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The FES1DEQ-7 belongs to Diodes' automotive-qualified ultra-fast rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in demanding automotive and industrial environments.

FAQ

Is FES1DEQ-7 suitable for use in non-automotive applications?

Yes. While AEC-Q101 qualified and optimized for automotive, the FES1DEQ-7 meets all electrical and thermal specifications for industrial, computing, and consumer power supplies. Its low V_F, fast t_RR, and wide T_J range make it appropriate for any high-frequency, high-temperature rectification application-even outside PPAP-driven programs.

What is the maximum allowable PCB pad temperature during reflow soldering?

The DO-219AA package is rated for standard lead-free reflow profiles (J-STD-020, MSL Level 1). Peak temperature must not exceed 260°C for ≤10 seconds. Preheat ramp rate ≤3°C/s, and time above 217°C must be 60–150 seconds. Thermal profiling is recommended to avoid die stress from excessive localized heating.

Does FES1DEQ-7 require a heatsink in 1 A continuous operation?

No external heatsink is required if PCB layout provides ≥100 mm² of 2 oz copper connected to the cathode pad. At 1 A and +70°C ambient, junction temperature remains ~115°C (within 150°C limit) using R_θJA = 115°C/W. For higher ambient or sustained overload, increase copper area or add thermal vias to inner layers.

How does the glass passivation affect long-term reliability in humid environments?

Glass passivation forms a hermetic, chemically inert barrier over the silicon junction, preventing moisture ingress and ion migration. This eliminates parametric drift in IR and V_(BR)R under 85°C/85% RH stress testing-critical for automotive modules exposed to condensation and thermal cycling in engine compartments.