Vishay General Semiconductor - Diodes Division FESB8DTHE3_A/I

Overview

FESB8DTHE3_A/I from Vishay General Semiconductor is an ultrafast plastic rectifier diode in TO-263AB (D²PAK) package, rated for 200 V repetitive peak reverse voltage (V_RRM), 8.0 A average forward current (I_F(AV)), and 35 ns reverse recovery time (t_rr). It serves as a high-efficiency output rectifier in switching-mode power supplies and DC-DC converters operating at high frequencies.

For engineers reviewing the FESB8DTHE3_A/I datasheet, FESB8DTHE3_A/I pinout, FESB8DTHE3_A/I application, or FESB8DTHE3_A/I equivalent, key selection criteria include its 35 ns t_rr, 0.95 V forward voltage at 8.0 A, 125 A non-repetitive surge rating, RoHS-compliant construction, and TO-263AB thermal resistance of 2.2 °C/W junction-to-case.

Technical Context

This device belongs to the FES(F,B)8xT family of ultrafast rectifiers optimized for high-frequency switching applications. Its glass-passivated junction ensures stable performance under thermal stress, while the low trr and VF directly reduce switching losses and improve system efficiency in SMPS topologies.

The TO-263AB package provides enhanced thermal dissipation over TO-220AC variants, with a typical R_θJC of 2.2 °C/W. The E3 suffix confirms consumer-grade qualification per JESD201 Class 1A whisker test, and the device operates across -55 °C to +150 °C junction temperature range.

Key Specifications

Pinout & Package

Package: TO-263AB (D²PAK), surface-mount, isolated heatsink tab (pin 2), matte tin-plated leads, UL 94V-0 epoxy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH8R02CFP and MUR820CT, the FESB8DTHE3_A/I delivers superior thermal performance (R_θJC = 2.2 °C/W) and identical 35 ns t_rr, making it optimal for high-power-density, surface-mount SMPS designs where heatsink interface efficiency is critical.

Availability

FESB8DTHE3_A/I is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, RoHS compliance, and high-reliability ultrafast rectification.

Supply support for FESB8DTHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and ruggedized packaging.

The FES(F,B)8xT series was engineered for high-frequency power conversion, targeting switching-mode power supplies, inverters, and DC-DC converters where low trr, low VF, and thermal robustness are essential.

FAQ

What is the maximum junction temperature rating for the FESB8DTHE3_A/I?

The FESB8DTHE3_A/I has a maximum junction temperature (T_J) rating of +150 °C, verified per Vishay Document Number 88600. This allows reliable operation in high-ambient industrial and telecom environments when thermal design maintains case temperature within derated limits. The device's thermal resistance (R_θJC = 2.2 °C/W) enables effective heat transfer to the PCB heatsink pad, supporting sustained 8.0 A operation at elevated temperatures. Always refer to the derating curve in Figure 1 of the FESB8DTHE3_A/I datasheet for precise thermal limits.

Is the FESB8DTHE3_A/I pin-compatible with other TO-263AB ultrafast diodes?

The FESB8DTHE3_A/I uses a standard TO-263AB (D²PAK) outline with Pin 1 = Anode and Pin 2 = Cathode/tab, matching industry-standard pinout for single-diode configurations. However, direct pin compatibility with other manufacturers' TO-263AB diodes depends on internal construction and thermal pad isolation-FESB8DTHE3_A/I's tab is electrically connected to Pin 2 (cathode), which must be verified against target alternatives. Always cross-check mounting hole alignment, pad dimensions, and thermal pad connectivity before substitution.

Does the FESB8DTHE3_A/I meet automotive qualification standards?

No, the FESB8DTHE3_A/I carries the E3 suffix, indicating consumer-grade qualification per JESD201 Class 1A whisker testing-not AEC-Q101. For automotive applications, Vishay offers the HE3-suffix variant (e.g., FESB8DTHE3) which is AEC-Q101 qualified and meets JESD201 Class 2. The FESB8DTHE3_A/I is intended for industrial, telecom, and computing applications where extended temperature operation and reliability are required, but formal automotive qualification is not mandated.

What is the reverse recovery time (t_rr) specification for the FESB8DTHE3_A/I, and under what conditions is it measured?

The FESB8DTHE3_A/I has a maximum reverse recovery time (t_rr) of 35 ns, measured at I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A per Vishay Document Number 88600. This value reflects performance under standardized test conditions and enables efficient operation in high-frequency switching circuits up to several hundred kHz. Real-world t_rr may vary slightly with circuit layout, temperature, and di/dt, so system-level validation is recommended for critical timing paths.

How does the FESB8DTHE3_A/I compare to the FES8DTHE3 in terms of package and thermal performance?

The FESB8DTHE3_A/I uses the TO-263AB (D²PAK) surface-mount package with R_θJC = 2.2 °C/W, while the FES8DTHE3 uses TO-220AC through-hole packaging with R_θJC = 5.0 °C/W. Both share identical electrical specs (V_RRM = 200 V, t_rr = 35 ns, V_F = 0.95 V), but the FESB8DTHE3_A/I offers significantly better thermal performance and enables automated assembly. The TO-263AB footprint also reduces board space and improves mechanical robustness in vibration-prone environments compared to TO-220AC.