Vishay General Semiconductor - Diodes Division FESB8DTHE3_A/P

Overview

FESB8DTHE3_A/P from Vishay General Semiconductor is an ultrafast plastic rectifier diode in TO-263AB (D2PAK) package, rated for 200 V repetitive peak reverse voltage (V_RRM), 8.0 A average forward current (I_F(AV)), and 35 ns reverse recovery time (t_rr). It serves as a high-efficiency freewheeling or output rectifier in switching-mode power supplies operating at 100–500 kHz.

For engineers reviewing the FESB8DTHE3_A/P datasheet, FESB8DTHE3_A/P pinout, FESB8DTHE3_A/P application, or FESB8DTHE3_A/P equivalent, key selection criteria include its 0.95 V forward voltage at 8 A, 125 A non-repetitive surge rating, 2.2 °C/W junction-to-case thermal resistance, RoHS-compliant construction, and consumer-grade whisker-tested matte tin terminations.

Technical Context

This device belongs to Vishay's FES(F,B)8xT family of ultrafast rectifiers optimized for high-frequency switching applications. Its glass-passivated junction ensures stable performance under thermal cycling, while the TO-263AB package enables low-inductance mounting and efficient heatsinking via the exposed drain tab (Pin 2).

The FESB8DTHE3_A/P exhibits tightly specified electrical behavior: t_rr = 35 ns under I_F = 0.5 A / I_R = 1.0 A / I_rr = 0.25 A conditions, V_F ≤ 0.95 V at I_F = 8 A and T_J = 25 °C, and I_R ≤ 10 µA at V_DC = 200 V and T_J = 25 °C - confirming suitability for high-efficiency DC/DC converters and PFC stages.

Key Specifications

Pinout & Package

Package: TO-263AB (D2PAK), surface-mount, with isolated gate pad (Pin 1) and thermally enhanced drain tab (Pin 2/K). Mounting requires solder reflow per J-STD-020 MSL Level 1 (peak 245 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with FESB8DTHE3_A/P, the FESB8DTE3_A/P offers identical electrical and thermal performance with optimized packaging for SMT line efficiency, while the MUR820CT trades higher forward loss and poorer thermal resistance for dual-diode integration - making the FESB8DTHE3_A/P preferable for single-diode, high-density, high-efficiency applications.

Availability

FESB8DTHE3_A/P is available at Aetrix Electronics and suitable for server power supply rectification, industrial DC/DC converter output stages, and automotive body control module power stages requiring stable component supply, consistent lead-time visibility, and long-term lifecycle support.

Supply support for FESB8DTHE3_A/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The FES(F,B)8xT series was engineered for high-frequency switching power conversion, targeting efficiency-critical roles in SMPS, inverters, and DC/DC converters where ultrafast recovery and low forward voltage directly impact system thermal and energy performance.

FAQ

What is the maximum junction temperature rating for the FESB8DTHE3_A/P?

The FESB8DTHE3_A/P has a maximum junction temperature (T_J) of +150 °C, verified per Vishay Document Number 88600. This rating enables reliable operation in high-ambient environments such as enclosed power supplies or under-hood automotive electronics, provided thermal design maintains T_J ≤ 150 °C using the specified R_θJC = 2.2 °C/W path to the heatsink. The FESB8DTHE3_A/P must not exceed this limit during steady-state or transient conditions.

Is the FESB8DTHE3_A/P RoHS compliant and lead-free?

Yes, the FESB8DTHE3_A/P meets RoHS Directive 2011/65/EU and is lead-free. Per Vishay documentation, it uses matte tin-plated leads compliant with J-STD-002 and JESD22-B102, and its epoxy meets UL 94V-0 flammability rating. The "E3" suffix confirms compliance with JESD201 Class 1A whisker testing, ensuring suitability for consumer-grade lead-free reflow processes without tin whisker formation risk.

What is the reverse recovery time (t_rr) specification for the FESB8DTHE3_A/P, and under what test conditions?

The FESB8DTHE3_A/P has a maximum reverse recovery time (t_rr) of 35 ns, measured under the standardized condition of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A at T_J = 25 °C. This value is confirmed in the Electrical Characteristics table of Vishay Document Number 88600 and reflects true ultrafast switching behavior critical for minimizing switching losses in high-frequency power converters.

Can the FESB8DTHE3_A/P be used as a direct replacement for the FES8DT-E3 in TO-220AC package?

No - the FESB8DTHE3_A/P is in TO-263AB (D2PAK) package with Pin 1 = Anode and Pin 2 = Cathode (tab), whereas the FES8DT-E3 uses TO-220AC with different pinout, thermal path, and mounting. Though electrically similar (same V_RRM, I_F(AV), t_rr), the FESB8DTHE3_A/P requires PCB redesign for SMT footprint and thermal pad layout. It is not a drop-in replacement; mechanical and thermal integration must be revalidated.

What is the isolation voltage rating of the FESB8DTHE3_A/P?

The FESB8DTHE3_A/P does not specify isolation voltage, as isolation is not applicable to single-diode TO-263AB packages. Isolation voltage (1500 V_AC) is only defined for ITO-220AC variants in the same family (per Document Number 88600, page 2). The FESB8DTHE3_A/P relies on PCB creepage/clearance and system-level insulation for safety compliance; designers must ensure layout meets required working voltage standards independently.