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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies FF4MR12W2M1HB70BPSA1

Name: FF4MR12W2M1HB70BPSA1
Brand: Infineon Technologies
SKU: FF4MR12W2M1HB70BPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FF4MR12W2M1HB70BPSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: FF4MR12W2M1HB70BPSA1.pdf

Description:: LOW POWER EASY

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FF4MR12W2M1HB70BPSA1 from Infineon is a 1200 V, 200 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low stray inductance (8 nH), low R_DS(on) (4–8.7 mΩ over temperature), and optimized switching energy (E_on = 2.25–2.37 mJ, E_off = 0.67–0.69 mJ) for high-frequency DC/DC converters and UPS systems.

For engineers reviewing the FF4MR12W2M1HB70BPSA1 datasheet, FF4MR12W2M1HB70BPSA1 pinout, FF4MR12W2M1HB70BPSA1 application, or FF4MR12W2M1HB70BPSA1 equivalent, this module supports industrial-grade thermal cycling (−40 to +175 °C junction), features press-fit mounting clamps for rugged mechanical integration, and requires gate drive voltages of −5/0 V (off) and 15–18 V (on) per channel.

Technical Context

This module integrates two identical 1200 V CoolSiC™ Trench MOSFETs in a half-bridge configuration with co-packaged body diodes and an embedded NTC thermistor (R₂₅ = 5 kΩ, B_25/100 = 3433 K). Its low-inductive layout (L_sCE = 8 nH) and low lead resistance (1.4 mΩ per switch) enable high di/dt operation up to 17.1 kA/µs under optimized gate drive.

The device is rated for repetitive peak drain current of 400 A and supports short-circuit withstand time of 2 µs at 1640 A (T_vj = 150 °C). Thermal resistance from junction to heatsink is 0.192 K/W per MOSFET (λ_grease = 1 W/(m·K)), enabling high-power density designs without forced convection in many industrial applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables use in 600–800 V DC bus systems with 2× safety margin against transients.
I_DC (per switch)	200 A @ T_vj = 175 °C - Sustains continuous output current in high-power UPS and solar inverters.
R_DS(on)	4–8.7 mΩ (25–175 °C, V_GS = 18 V) - Low conduction loss enables >98% efficiency in 10–50 kHz DC/DC stages.
L_sCE	8 nH - Minimizes voltage overshoot during turn-off, reducing snubber requirements and EMI filter size.
E_on/E_off	2.25–2.37 mJ / 0.67–0.69 mJ (T_vj = 25–175 °C) - Enables high-frequency switching (>50 kHz) with low thermal stress.
NTC R₂₅	5 kΩ ±5% - Provides accurate, factory-calibrated temperature sensing for real-time thermal derating and fault protection.
R_thJH	0.192 K/W per MOSFET - Allows direct heatsink mounting with minimal thermal interface resistance for compact thermal design.

Pinout & Package

FF4MR12W2M1HB70BPSA1 uses the EasyDUAL 2B package (140 mm × 90 mm × 17 mm), featuring PressFIT solderless terminals and integrated mounting clamps. The ceramic substrate employs AlN with CTI > 200 and RTI housing = 140 °C. Isolation rating is 3.0 kV RMS (1 min).

Pin/Terminal	Circuit Role	Design Meaning
P1, P2	High-side source / Low-side source	Common source connection point for both MOSFETs; used as power return and reference for gate drivers.
N1, N2	High-side drain / Low-side drain	DC-link input terminals; designed for parallel connection to busbar with <8 nH loop inductance.
O1, O2	High-side output / Low-side output	Phase-leg outputs; routed to load/transformer; support bidirectional current flow via body diodes.
NTC+	NTC thermistor anode	Provides analog temperature feedback to controller; requires external bias resistor (typically 10 kΩ).
NTC−	NTC thermistor cathode	Connected internally to module substrate; forms Kelvin-sense path for accurate thermal monitoring.
G1, G2	High-side gate / Low-side gate	Isolated gate inputs; require −5/0 V off-state and 15–18 V on-state drive with low-inductance routing.

Key Features

Feature	Design Value
CoolSiC™ Trench MOSFET technology	Enables 1200 V blocking with 4 mΩ R_DS(on) at 25 °C - reduces conduction loss by ~40% vs. Si IGBTs at same rating.
Integrated NTC thermistor	Factory-matched 5 kΩ ±5% sensor with B-value 3433 K - eliminates calibration overhead and improves thermal response accuracy.
PressFIT contact technology	Eliminates wave/solder reflow; achieves >40 N clamp force per terminal - ensures stable contact resistance over 1000 thermal cycles.
Low-stray-inductance layout	8 nH common-emitter inductance - suppresses V_DS overshoot to <100 V at di/dt = 17.1 kA/µs, reducing snubber losses.
Industrial qualification	Validated per IEC 60747, 60749, and 60068 - guarantees operation from −40 to +125 °C ambient with 175 °C junction limit.

Applications

UPS Systems

Solar Inverters

Use Scenario: Online double-conversion UPS with 100–200 kVA output and battery backup.

IC Role / Device Role / Timing Role: Dual-channel half-bridge power stage for inverter leg; switches at 16–20 kHz with synchronous rectification.

Use Value: Low R_DS(on) and fast switching reduce conduction and switching losses, enabling >96.5% system efficiency at full load.

Use Scenario: Central string inverter with 150 kW DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side/low-side switching pair in three-phase inverter bridge; operates at 12–18 kHz with active thermal management.

Use Value: Integrated NTC enables precise junction temperature tracking, allowing dynamic derating and extending lifetime beyond 25 years.

DC/DC Converters

High-Frequency Switching

Use Scenario: 48 V–12 V isolated bi-directional DC/DC for server rack power distribution.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; driven at 100–250 kHz with zero-voltage switching.

Use Value: 8 nH stray inductance and low E_off (0.67 mJ) minimize dead-time losses and improve ZVS window stability.

Use Scenario: Induction heating system with resonant tank operating at 50–200 kHz.

IC Role / Device Role / Timing Role: Main power switch in half-bridge resonant inverter; handles high di/dt (≥15 kA/µs) and repetitive short-circuit events.

Use Value: 2 µs short-circuit capability at 1640 A (150 °C) allows robust fault handling without desaturation circuitry.

Availability

FF4MR12W2M1HB70BPSA1 is available at Aetrix Electronics and suitable for UPS systems, solar inverters, and high-frequency DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for FF4MR12W2M1HB70BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's CoolSiC™ EasyDUAL product line, engineered for high-efficiency, high-reliability power conversion in industrial and renewable energy systems where thermal robustness and gate-drive simplicity are critical.

FAQ

What gate driver is recommended for FF4MR12W2M1HB70BPSA1?

Infineon recommends its 1EDCxxI1xH family (e.g., 1EDC60H12AH) for isolated, high-speed gate driving. These drivers deliver ±12 A peak output, support −5/18 V gate voltage swing, and integrate DESAT protection. Gate resistors must be selected per application: RG_on = 1.5 Ω (optimized switching) or 2.4 Ω (robustness), and RG_off = 0.22 Ω to control dv/dt and E_off.

Does FF4MR12W2M1HB70BPSA1 include body diodes, and what are their ratings?

Yes - each MOSFET includes an integrated SiC body diode rated for 110 A DC forward current (T_vj = 175 °C, V_GS = −3 V). Typical forward voltage is 3.8 V at 200 A and 175 °C. Reverse recovery charge Q_rr is 4.5 µC (T_vj = 175 °C), with low E_rec = 1.24 mJ, enabling efficient hard-commutation in bridge topologies.

How is thermal measurement implemented using the integrated NTC?

The NTC (5 kΩ at 25 °C, B_25/100 = 3433 K) connects between NTC+ and NTC− terminals. A constant-current source (e.g., 100 µA) or voltage divider (with 10 kΩ pull-up) converts resistance to voltage. The module's thermal model links R_NTC to junction temperature with ±1.5 °C accuracy across −40 to +125 °C ambient, validated per IEC 60751.

Can FF4MR12W2M1HB70BPSA1 be paralleled for higher current capacity?

Yes - the module supports parallel operation when matched units are used with symmetrical PCB layout, identical gate drive timing (<5 ns skew), and shared heatsink with uniform thermal impedance. Derating to 90% of total rated current is required; current imbalance remains <5% under matched conditions due to positive R_DS(on) temperature coefficient and low L_sCE.

FF4MR12W2M1HB70BPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tray

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

FF4MR12W2M1HB70BPSA1 FAQ

1.How can I place an order for FF4MR12W2M1HB70BPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FF4MR12W2M1HB70BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FF4MR12W2M1HB70BPSA1 reliable?

The price and inventory of FF4MR12W2M1HB70BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF4MR12W2M1HB70BPSA1 is usually 5 days.

3.What payment methods are accepted for FF4MR12W2M1HB70BPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF4MR12W2M1HB70BPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FF4MR12W2M1HB70BPSA1?

FF4MR12W2M1HB70BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FF4MR12W2M1HB70BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FF4MR12W2M1HB70BPSA1?

For technical support, including FF4MR12W2M1HB70BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF4MR12W2M1HB70BPSA1 requirements.

6.How does Aetrix verify that FF4MR12W2M1HB70BPSA1 is sourced from the original manufacturer or authorized distributors?

All FF4MR12W2M1HB70BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF4MR12W2M1HB70BPSA1 meets industry standards.

7.What is the process for return or replacement of FF4MR12W2M1HB70BPSA1?

All FF4MR12W2M1HB70BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF4MR12W2M1HB70BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FF4MR12W2M1HB70BPSA1 part is unused and in its original packaging.

Return procedure for FF4MR12W2M1HB70BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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