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Infineon Technologies FF55MR12W1M1HB11BPSA1
- Part No.:
- FF55MR12W1M1HB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Power Driver Modules
- Package:
- -
- Datasheet:
-
FF55MR12W1M1HB11BPSA1.pdf
- Description:
- EASYDUAL MODULE WITH COOLSIC TRE
- Quantity:
- Payment:
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Inventory:27
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Product details
Overview
FF55MR12W1M1HB11BPSA1 from Infineon is a 1200 V, 15 A (DC) dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 0.334 mJ, Eoff = 0.043 mJ at Tvj = 175 °C), 14 nH stray inductance, and RDS(on) = 114 mΩ at 175 °C - engineered for high-frequency DC/DC converters and motor drives requiring robust thermal monitoring and low-inductance layout.
For engineers reviewing the FF55MR12W1M1HB11BPSA1 datasheet, FF55MR12W1M1HB11BPSA1 pinout, FF55MR12W1M1HB11BPSA1 application, or FF55MR12W1M1HB11BPSA1 equivalent, key selection criteria include its 1200 V blocking capability, PressFIT-compatible mechanical interface, integrated NTC (R25 = 5 kΩ, B25/100 = 3433 K), and qualified industrial reliability per IEC 60747/60749/60068.
Technical Context
This module integrates two identical 1200 V CoolSiC™ Trench MOSFETs in a half-bridge configuration with co-packaged body diodes and an embedded NTC thermistor. Its low-inductive design (LsCE = 14 nH) and internal gate resistors (RGint = 7.5 Ω) support fast, controlled switching up to 100 kHz while minimizing voltage overshoot and EMI.
The PressFIT contact system eliminates soldering, enabling high-reliability interconnection to PCBs with defined mounting force (20–50 N per clamp). Thermal resistance from junction to heatsink is 2.03 K/W per MOSFET (λgrease = 1 W/(m·K)), supporting operation up to 175 °C junction temperature under overload conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables use in 800 V DC bus systems with 50 % voltage margin for transients and safety compliance. |
| IDDC / IDRM | 15 A DC / 30 A peak - Supports continuous 25 A rms per connector pin with derating for thermal management. |
| RDS(on) | 114 mΩ at Tvj = 175 °C - Determines conduction loss in high-temp operation; impacts heatsink sizing and efficiency at full load. |
| LsCE | 14 nH - Limits voltage overshoot during turn-off (V = L·di/dt), critical for EMI control and device ruggedness. |
| NTC R25 | 5 kΩ ±5 % at 25 °C - Enables accurate temperature sensing across -40 to 125 °C range using standard biasing circuits. |
| RthJH | 2.03 K/W per MOSFET - Defines thermal path efficiency; used with heatsink thermal resistance to calculate max junction temperature. |
| Eon / Eoff | 0.334 mJ / 0.043 mJ at Tvj = 175 °C - Quantifies switching energy loss per pulse; directly scales with switching frequency and influences cooling requirements. |
Pinout & Package
FF55MR12W1M1HB11BPSA1 uses the EasyDUAL 2L package (12 mm × 22 mm footprint) with PressFIT terminals and integrated mounting clamps. The module features 11 terminals: 2× power input (P+/P−), 2× phase outputs (T1/T2), 2× gate drivers (G1/G2), 2× source returns (S1/S2), 2× NTC pins (NTC+/NTC−), and 1× auxiliary sense (VCE).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P+, P− | DC bus input terminals | High-current paths for 1200 V DC link connection; designed for PressFIT insertion into plated-through holes. |
| T1, T2 | Phase output terminals | Switched AC outputs for motor phases or transformer primary; low-inductance routing minimizes ringing. |
| G1, G2 | Gate drive inputs | Isolated gate control nodes; require external gate resistors (RGon/RGoff) for optimized switching behavior. |
| S1, S2 | Source return paths | Return paths for gate drive loops; critical for minimizing common-mode noise and ensuring stable turn-on/turn-off. |
| NTC+, NTC− | NTC thermistor terminals | Enable real-time die temperature monitoring; compatible with standard NTC biasing and ADC readout circuits. |
| VCE | Collector-emitter sense | Provides access to internal voltage sense point for overvoltage protection or active clamping feedback. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V rating with lower RDS(on) and faster switching than planar SiC or Si IGBTs, reducing system size and losses. |
| PressFIT contact system | Eliminates solder joint fatigue and voiding risks; supports automated assembly and field-replaceable module integration. |
| Integrated NTC thermistor | Monitors junction temperature directly on substrate; enables closed-loop thermal protection without external sensors or calibration. |
| Low stray inductance (14 nH) | Reduces voltage spikes during hard switching, allowing higher dv/dt tolerance and smaller snubber components. |
| Qualified for industrial applications | Validated per IEC 60747 (semiconductor devices), IEC 60749 (reliability), and IEC 60068 (environmental stress testing). |
Applications
| Industrial Motor Drives | High-Frequency DC/DC Converters |
|---|---|
|
Use Scenario: Variable-speed control of 3-phase induction or PMSM motors in HVAC, pumps, and compressors operating from 690 V AC mains. IC Role / Device Role / Timing Role: Half-bridge switching stage delivering PWM-controlled 1200 V, 15 A output with precise dead-time control and thermal feedback. Use Value: Enables >98 % efficiency at 25 kHz switching with integrated NTC-based thermal derating, eliminating discrete temperature sensors and reducing BOM count. |
Use Scenario: Isolated bidirectional DC/DC conversion in energy storage systems (ESS) and EV charging infrastructure, interfacing 800 V battery banks with 48 V auxiliary rails. IC Role / Device Role / Timing Role: Primary-side SiC half-bridge switch handling 100 kHz resonant or phase-shifted ZVS topologies with minimal conduction and switching loss. Use Value: Achieves <0.3 % efficiency drop from 25 °C to 125 °C due to flat RDS(on) vs. temperature curve and low Eoff, extending thermal headroom. |
| Uninterruptible Power Supplies (UPS) | Renewable Energy Inverters |
|
Use Scenario: Online double-conversion UPS systems requiring zero-transfer-time backup for data centers and telecom infrastructure. IC Role / Device Role / Timing Role: Inverter-stage power switch managing 1200 V DC link and delivering clean 230 V AC output with low THD and fast transient response. Use Value: PressFIT terminals ensure vibration-resistant interconnects in rack-mounted systems; qualified IEC 60068-2-64 withstands 5–500 Hz random vibration profiles. |
Use Scenario: Central string inverters for solar PV farms converting 1000–1500 V DC input to grid-synchronized 3-phase AC output. IC Role / Device Role / Timing Role: High-voltage DC link switching element in NPC or T-type multilevel topologies, leveraging low Eon/Eoff for >99 % peak efficiency. Use Value: Integrated NTC allows real-time junction temperature tracking during partial shading events, enabling dynamic derating to prevent thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF6MR12W2M1_B11 | 1200 V / 25 A rating, higher current, same EasyDUAL 2L package and PressFIT interface. | Supports higher-power motor drives (up to 30 kW) but requires larger heatsink and gate driver current capability. | Select when system peak current exceeds 15 A DC and thermal design accommodates higher RDS(on) × I² loss at 25 A. |
| FF300R12ME4_B11 | 1200 V / 300 A IGBT module, silicon-based, TO-247-3L packaged, no integrated NTC or PressFIT. | Lower switching frequency limit (~20 kHz), higher conduction loss, requires external temperature sensing and soldered assembly. | Choose only if cost sensitivity outweighs efficiency, thermal monitoring, and assembly flexibility - not recommended for new SiC-optimized designs. |
Compared with FF6MR12W2M1_B11, FF55MR12W1M1HB11BPSA1 offers tighter thermal coupling and lower gate charge for faster switching at medium power; versus FF300R12ME4_B11, it provides 3× higher efficiency at 100 kHz but demands more precise gate drive design and voltage margining.
Availability
FF55MR12W1M1HB11BPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-frequency DC/DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production line.
Supply support for FF55MR12W1M1HB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
This part belongs to the CoolSiC™ EasyDUAL™ product line, designed specifically for industrial power conversion systems demanding high efficiency, compact size, and reliable thermal management through integrated sensing and low-inductance packaging.
FAQ
What gate drive voltage is recommended for FF55MR12W1M1HB11BPSA1?
The datasheet specifies VGS(on) = +15 to +18 V and VGS(off) = −5 to 0 V. A typical robust configuration uses +18 V turn-on and −3 V turn-off to minimize RDS(on) and ensure fast, noise-immune shutdown. Exceeding +18 V risks gate oxide degradation, while −5 V improves dv/dt immunity during commutation.
Does FF55MR12W1M1HB11BPSA1 include body diodes, and what are their ratings?
Yes - each MOSFET includes an integrated SiC body diode rated for 5 A DC forward current (ISD) at Tvj = 175 °C and VGS = −3 V. Forward voltage is 3.8 V at 15 A and 175 °C. These diodes support synchronous rectification and freewheeling in half-bridge topologies without external anti-parallel diodes.
How is the NTC thermistor electrically isolated and calibrated?
The NTC is embedded in the module substrate and electrically isolated from power terminals per IEC 61140 (basic insulation, CTI > 200). Its resistance is specified as 5 kΩ ±5 % at 25 °C with B25/100 = 3433 K. Calibration follows Infineon Application Note AN2021-13, providing lookup tables for linearization across −40 to 125 °C.
What mechanical mounting force is required for reliable PressFIT contact?
The datasheet specifies a mounting force of 20–50 N per integrated clamp. This ensures sufficient contact pressure for low-resistance interconnection (<5.3 mΩ per switch) while avoiding PCB deformation. Force must be applied uniformly across both clamps using torque-controlled tools per Infineon's mounting guidelines.
FF55MR12W1M1HB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Type:
- -
- Configuration:
- -
- Current:
- -
- Voltage:
- -
- Voltage - Isolation:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
FF55MR12W1M1HB11BPSA1 FAQ
1.How can I place an order for FF55MR12W1M1HB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF55MR12W1M1HB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF55MR12W1M1HB11BPSA1 reliable?
The price and inventory of FF55MR12W1M1HB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF55MR12W1M1HB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF55MR12W1M1HB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF55MR12W1M1HB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF55MR12W1M1HB11BPSA1?
FF55MR12W1M1HB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF55MR12W1M1HB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF55MR12W1M1HB11BPSA1?
For technical support, including FF55MR12W1M1HB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF55MR12W1M1HB11BPSA1 requirements.
6.How does Aetrix verify that FF55MR12W1M1HB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF55MR12W1M1HB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF55MR12W1M1HB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF55MR12W1M1HB11BPSA1?
All FF55MR12W1M1HB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF55MR12W1M1HB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF55MR12W1M1HB11BPSA1 part is unused and in its original packaging.
Return procedure for FF55MR12W1M1HB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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