Infineon Technologies FF55MR12W1M1HB70BPSA1

Overview

FF55MR12W1M1HB70BPSA1 from Infineon is a 1200 V, 15 A (DC) dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 0.316 mJ, Eoff = 0.042 mJ at Tvj = 150 °C), 14 nH stray inductance, and 1.25 K/W junction-to-heatsink thermal resistance per MOSFET - engineered for high-efficiency, high-frequency industrial inverters and DC/DC converters.

For engineers reviewing the FF55MR12W1M1HB70BPSA1 datasheet, FF55MR12W1M1HB70BPSA1 pinout, FF55MR12W1M1HB70BPSA1 application, or FF55MR12W1M1HB70BPSA1 equivalent, key selection criteria include its 1200 V blocking capability, PressFIT-compatible mechanical interface, integrated NTC (R25 = 5 kΩ, B25/100 = 3433 K), low RDS(on) of 52.9 mΩ at 25 °C, and qualification to IEC 60747/60749/60068 for industrial environments.

Technical Context

This dual-channel SiC MOSFET module integrates two independent 1200 V/15 A CoolSiC™ Trench devices in a single EasyDUAL package with shared heatsink interface and isolated gate drive paths. Its low-inductance layout (LsCE = 14 nH) and optimized gate charge (QG = 0.045 µC) enable hard-switching operation up to 100 kHz while maintaining low EMI and dv/dt stress.

The module embeds a calibrated NTC thermistor (R25 = 5 kΩ, ±5% tolerance at 100 °C) directly on the AlN substrate for accurate die temperature monitoring, and uses PressFIT contact technology eliminating solder reflow requirements. Thermal resistance RthJH = 1.25 K/W (per MOSFET, λgrease = 1 W/(m·K)) supports high-power density designs in motor drives and UPS systems.

Key Specifications

Pinout & Package

FF55MR12W1M1HB70BPSA1 is housed in an EasyDUAL™ 2B package (120 mm × 62 mm × 17 mm) with PressFIT-compatible copper terminals and integrated mounting clamps. The AlN ceramic substrate ensures low thermal resistance and high electrical isolation (VISOL = 3.0 kV RMS).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET module applications.

Compared with FS800R07A2E3_B11 and IMZ120R045M1HXTMA1, FF55MR12W1M1HB70BPSA1 uniquely combines PressFIT assembly, integrated NTC, and ultra-low LsCE in a dual-channel 1200 V SiC platform - making it optimal for high-reliability, high-power-density industrial inverters where thermal monitoring and EMI control are critical.

Availability

FF55MR12W1M1HB70BPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-frequency DC/DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for FF55MR12W1M1HB70BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure supporting automotive, industrial, and renewable energy markets.

This part belongs to Infineon's CoolSiC™ EasyDUAL™ product line - designed specifically for industrial power conversion systems demanding high efficiency, compact size, and robust thermal management through integrated SiC MOSFETs, ceramic substrates, and advanced packaging.

FAQ

What gate drive voltage is recommended for FF55MR12W1M1HB70BPSA1?

The datasheet specifies VGS(on) = 15–18 V and VGS(off) = −5 to 0 V. A typical robust drive is +18 V / −3 V, which minimizes RDS(on) while ensuring safe turn-off margin against Miller-induced false triggering. Gate resistors must be selected to limit di/dt to ≤1.8 kA/µs per the datasheet's Eon test condition.

Does FF55MR12W1M1HB70BPSA1 include body diodes, and what are their ratings?

Yes - each CoolSiC™ MOSFET has an inherent unipolar body diode rated for ISD = 5 A DC at Tvj = 175 °C (VGS = −3 V). Forward voltage is 3.85 V at 15 A and 150 °C. Unlike Si diodes, it exhibits no reverse recovery charge (Qrr ≈ 0), eliminating associated switching losses and EMI.

How is the NTC thermistor calibrated, and what accuracy can be expected?

The integrated NTC has R25 = 5 kΩ ±1% (typical), B25/100 = 3433 K ±1%, and ΔR/R = ±5% at 100 °C. Calibration follows IEC 60539-1, and the datasheet provides full R-T lookup tables. Accuracy is ±1.5 K over −40 to +125 °C when used with 1% reference resistors and 12-bit ADC.

Can FF55MR12W1M1HB70BPSA1 be paralleled with identical units?

No - the module is not characterized or qualified for parallel operation. Its PressFIT terminals and internal current-sharing design assume single-module per half-bridge leg. For higher current, Infineon recommends using larger-rated modules (e.g., FF11MR12W1M1HB11) rather than paralleling.