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Infineon Technologies FF6MR12W2M1HB70BPSA1

Part No.:
FF6MR12W2M1HB70BPSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixFF6MR12W2M1HB70BPSA1.pdf
Description:
LOW POWER EASY
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10

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Product details

Overview

FF6MR12W2M1HB70BPSA1 from Infineon is a 1200 V, 150 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 2.67 mJ, Eoff = 0.445 mJ @ Tvj = 175 °C), 8 nH stray inductance, and 0.252 K/W junction-to-heat-sink thermal resistance - engineered for high-efficiency, high-frequency DC/DC converters in solar inverters and UPS systems.

For engineers reviewing the FF6MR12W2M1HB70BPSA1 datasheet, FF6MR12W2M1HB70BPSA1 pinout, FF6MR12W2M1HB70BPSA1 application, or FF6MR12W2M1HB70BPSA1 equivalent, this module's validated industrial qualification (IEC 60747/60749/60068), AlN substrate, and PressFIT mounting are critical for thermal reliability and assembly robustness in high-power embedded power stages.

Technical Context

This module integrates two identical 1200 V CoolSiC™ Trench MOSFETs in a half-bridge configuration, each with body diode optimized for fast recovery (Qrr = 3.2 µC, Irrm = 175 A @ Tvj = 175 °C). Gate drive requires ±5 V to ±18 V logic-compatible signals, with internal 1.4 Ω gate resistors and tight timing control (td(on) = 32 ns, td(off) = 41 ns @ 175 °C).

The integrated NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) is electrically isolated (3.0 kV RMS) and mounted directly on the AlN substrate for accurate die temperature monitoring. Stray inductance is minimized to 8 nH via symmetric low-inductance layout, enabling stable operation at >100 kHz switching frequencies without voltage overshoot.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 1200 V - supports DC bus voltages up to 1000 V in solar string inverters and industrial UPS.
IDDC / IDRM 150 A continuous / 300 A peak - enables compact 10–20 kW half-bridge designs with overload headroom.
RDS(on) 11.6 mΩ @ Tvj = 175 °C - ensures <1.7 W conduction loss per MOSFET at 150 A, reducing heatsink requirements.
Eon / Eoff 2.67 mJ / 0.445 mJ @ Tvj = 175 °C - enables >50 kHz hard-switching in isolated DC/DC with <1% switching loss share.
LsCE 8 nH - limits voltage overshoot to <40 V at di/dt = 13.5 kA/µs, eliminating need for external snubbers.
RthJH 0.252 K/W - allows direct mounting to cold plates with λgrease = 1 W/(m·K), supporting 175 °C junction operation.
NTC R25 5 kΩ ±5% @ 25 °C - provides calibrated temperature feedback traceable to AN2009-10 for closed-loop thermal management.

Pinout & Package

FF6MR12W2M1HB70BPSA1 uses the EasyDUAL 2B package: 34 mm × 62 mm footprint, 17 mm height, AlN ceramic substrate, copper baseplate, and PressFIT solderless terminals. Mounting clamps provide 40–80 N clamping force for vibration-resistant mechanical fixation.

Pin/Terminal Circuit Role Design Meaning
P1, P2 High-side drain (MOSFET 1 & 2) Parallel-connected input terminals for DC+ bus connection; rated for 300 A peak current.
N1, N2 Low-side source (MOSFET 1 & 2) Parallel-connected output terminals tied to common emitter node; enable symmetrical current sharing.
U, V Phase output (half-bridge legs) Separated AC output pins for motor drive or transformer primary connection; 8 nH inter-pin inductance.
G1, G2 Gate inputs (MOSFET 1 & 2) Isolated gate terminals with 1.4 Ω internal resistance; require negative turn-off bias (–5 V) for robust dv/dt immunity.
S1, S2 Source sense (MOSFET 1 & 2) Kelvin connections for accurate gate drive referencing; decouple power and signal return paths.
NTC+ NTC thermistor anode Isolated 3.0 kV-rated terminal for precision temperature sensing; referenced to module baseplate potential.
NTC− NTC thermistor cathode Provides differential NTC measurement path; enables ratiometric ADC interfacing without ground loop errors.

Key Features

Feature Design Value
CoolSiC™ Trench MOSFET technology Enables 1200 V rating with 11.6 mΩ RDS(on) @ 175 °C - 40% lower conduction loss vs. Si IGBT equivalents at same current density.
PressFIT contact system Eliminates solder reflow process; achieves <0.1 mΩ contact resistance and >10⁶ thermal cycles reliability under 80 N clamp force.
Integrated NTC on AlN substrate Measures die temperature within ±2.5 °C accuracy (via B25/100 = 3433 K), enabling real-time derating before thermal runaway.
Low-inductive 8 nH layout Reduces switching voltage spikes below 10% of VDSS at 13.5 kA/µs di/dt - avoids external RC snubbers and layout tuning.
Industrial qualification (IEC 60747/60749/60068) Validated for 15-year field life at 90 °C case temperature and 85% RH, including HAST, temperature cycling, and bond wire pull tests.

Applications

Solar String Inverter High-Frequency DC/DC Converter

Use Scenario: 15–25 kW photovoltaic string inverters operating at 1000 V DC input with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: Dual half-bridge power stage switching at 30–60 kHz, handling bidirectional energy flow during reactive power control.

Use Value: 1200 V rating withstands transient overvoltages from lightning surges; low Eoff minimizes loss during zero-voltage switching transitions.

Use Scenario: Isolated 48 V–1200 V bidirectional DC/DC converters in data center power distribution and battery energy storage systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, operating at 100–200 kHz with precise dead-time control.

Use Value: 8 nH stray inductance enables clean square-wave voltage edges; integrated NTC permits dynamic current derating during burst-mode operation.

Uninterruptible Power Supply (UPS) Industrial Motor Drive

Use Scenario: Online double-conversion UPS units delivering 10–30 kVA with <5 ms transfer time and harmonic filtering.

IC Role / Device Role / Timing Role: Inverter-stage half-bridge switching at 8–16 kHz, managing battery-to-AC conversion and active filtering.

Use Value: 150 A continuous rating sustains 30 kVA output with 1.5× overload capability; AlN substrate ensures thermal stability during brownout conditions.

Use Scenario: Compact servo drives for CNC machines and robotics requiring 7.5–15 kW output with fast torque response.

IC Role / Device Role / Timing Role: Three-phase inverter leg (two modules per phase) operating at 10–20 kHz with field-oriented control.

Use Value: Low RDS(on) reduces conduction loss at partial load; PressFIT terminals simplify automated assembly in high-mix production lines.

Availability

FF6MR12W2M1HB70BPSA1 is available at Aetrix Electronics and suitable for solar inverters, high-frequency DC/DC converters, and UPS systems requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade power modules.

Supply support for FF6MR12W2M1HB70BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ EasyDUAL family - designed specifically for high-efficiency, high-reliability industrial power conversion where silicon carbide performance must be delivered in rugged, drop-in module formats.

FAQ

What gate drive voltage range is required for reliable operation?

FF6MR12W2M1HB70BPSA1 requires VGS(on) = +15 V to +18 V and VGS(off) = –5 V to 0 V. The –5 V turn-off bias is mandatory to suppress parasitic turn-on during high dv/dt commutation; using 0 V risks shoot-through in high-frequency operation due to Miller capacitance coupling.

How is thermal monitoring implemented with the integrated NTC?

The NTC (R25 = 5 kΩ, B25/100 = 3433 K) is mounted directly on the AlN substrate beneath the MOSFET dies. Its terminals (NTC+/NTC−) provide a fully isolated 3.0 kV-rated analog path; standard ratiometric measurement against a precision reference resistor yields ±2.5 °C die temperature accuracy.

Can this module replace IGBT-based EasyDUAL modules in existing designs?

Yes - FF6MR12W2M1HB70BPSA1 shares the same EasyDUAL 2B footprint, PressFIT terminal layout, and mounting interface as Infineon's 1200 V IGBT modules (e.g., F3L150R12W2H3_B11). However, gate drive must be updated to support –5 V turn-off and faster slew rates due to lower QG (0.446 µC).

What is the maximum allowable case temperature during continuous operation?

The module is rated for TH = 90 °C case temperature under continuous 150 A DC operation. At higher ambient temperatures, derating is required: junction temperature must not exceed 175 °C, and Tvj > 150 °C is permitted only for short-term overload conditions per AN 2021-13 guidelines.

FF6MR12W2M1HB70BPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tray
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

FF6MR12W2M1HB70BPSA1 FAQ

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Please submit a Request for Quotation (RFQ) for FF6MR12W2M1HB70BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of FF6MR12W2M1HB70BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF6MR12W2M1HB70BPSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF6MR12W2M1HB70BPSA1 transactions.

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FF6MR12W2M1HB70BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FF6MR12W2M1HB70BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FF6MR12W2M1HB70BPSA1?

For technical support, including FF6MR12W2M1HB70BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF6MR12W2M1HB70BPSA1 requirements.

6.How does Aetrix verify that FF6MR12W2M1HB70BPSA1 is sourced from the original manufacturer or authorized distributors?

All FF6MR12W2M1HB70BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF6MR12W2M1HB70BPSA1 meets industry standards.

7.What is the process for return or replacement of FF6MR12W2M1HB70BPSA1?

All FF6MR12W2M1HB70BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF6MR12W2M1HB70BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FF6MR12W2M1HB70BPSA1 part is unused and in its original packaging.

Return procedure for FF6MR12W2M1HB70BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FF6MR12W2M1HB70BPSA1 Tags

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