onsemi FFSD0665A

Overview

FFSD0665A from onsemi is a silicon carbide (SiC) Schottky diode rated for 650 V peak repetitive reverse voltage, 6 A continuous forward current at TC < 159°C, and 430 A non-repetitive surge current at 25°C. It features zero reverse recovery charge, positive temperature coefficient for stable paralleling, and operates up to 175°C junction temperature. It is used in high-efficiency power switching circuits such as solar inverters and SMPS.

For engineers reviewing the FFSD0665A datasheet, pinout, applications, or equivalent options, key selection factors include its 1.75 V max forward voltage at 6 A/25°C, 361 pF capacitance at 1 V, 22 nC capacitive charge at 400 V, 1.7 °C/W junction-to-case thermal resistance, and DPAK (Case 369AS) package with cathode-anode-cathode terminal configuration.

Technical Context

The FFSD0665A employs a planar SiC Schottky barrier structure that eliminates minority-carrier storage and reverse recovery losses. Its avalanche-rated 36 mJ energy capability enables robust unclamped inductive switching in hard-switched topologies without snubbers.

Thermal performance is defined by a maximum R_θJC of 1.7 °C/W and operation across −55°C to +175°C. The device exhibits temperature-independent switching behavior and a positive temperature coefficient for forward voltage, enabling inherently stable parallel operation without current-sharing resistors.

Key Specifications

Pinout & Package

FFSD0665A is housed in a surface-mount DPAK package (Case 369AS), measuring 6.10 × 6.54 × 2.29 mm with 4.57 mm lead pitch. The package features exposed drain pad for enhanced thermal transfer and mechanical robustness.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06065E and STPSC6H065DL, the FFSD0665A offers superior thermal resistance (1.7 °C/W), verified 36 mJ avalanche capability, and optimized DPAK layout compatibility-making it preferred for high-power-density, hard-switched industrial inverters requiring reliability under transient stress.

Availability

FFSD0665A is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for FFSD0665A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The FFSD0665A belongs to onsemi's EliteSiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial systems where Si limitations constrain performance.

FAQ

What is the maximum continuous forward current rating for FFSD0665A?

The FFSD0665A has a continuous rectified forward current rating of 6 A when case temperature is below 159°C, and 11 A when case temperature is below 135°C. This dual rating reflects its thermal derating curve and enables flexible thermal design depending on heatsink capability. The device's 1.7 °C/W junction-to-case resistance supports these ratings under appropriate thermal management. FFSD0665A must be operated within these limits to ensure reliability and avoid exceeding the 175°C maximum junction temperature.

Does FFSD0665A have avalanche capability, and how is it specified?

Yes, FFSD0665A is avalanche rated at 36 mJ under defined test conditions: starting junction temperature of 25°C, inductance of 0.5 mH, avalanche current of 12 A, and voltage of 50 V. This rating is measured using the unclamped inductive switching test circuit per Figure 9 in the datasheet. The avalanche ruggedness allows FFSD0665A to safely absorb transient energy in hard-switched topologies without external protection, distinguishing it from non-avalanche-rated SiC diodes. FFSD0665A's specification is fully validated and published in Table 1 of the official onsemi datasheet.

What is the forward voltage range of FFSD0665A across temperature and current?

The FFSD0665A forward voltage ranges from 1.50 V (typical) to 1.75 V (maximum) at 6 A and 25°C, rising to 1.72–2.4 V at 175°C. This positive temperature coefficient ensures stable operation and enables natural current sharing in parallel configurations. The voltage increase with temperature is linear and predictable, supporting accurate loss modeling across the full −55°C to +175°C operating range. FFSD0665A's V_F behavior is confirmed in Table 3 and Figure 1 of the onsemi datasheet.

Can FFSD0665A be used in parallel configurations, and what design considerations apply?

Yes, FFSD0665A is designed for parallel operation due to its positive temperature coefficient of forward voltage, which promotes inherent current sharing without external balancing resistors. Layout symmetry, matched trace inductance, and uniform thermal coupling are critical to maintain balance. The DPAK package's dual cathode terminals (pins 1 and 4) simplify symmetric routing. FFSD0665A's ease-of-paralleling feature is explicitly listed in the datasheet Features section and validated through characterization. For optimal results, keep interconnect inductance below 5 nH per branch.

What package type and pin configuration does FFSD0665A use?

FFSD0665A uses the DPAK package (Case 369AS), with mechanical dimensions of 6.10 × 6.54 × 2.29 mm and 4.57 mm lead pitch. It has three active terminals: pins 1 and 4 are internally connected cathodes, and pin 3 is the anode. This cathode-anode-cathode arrangement supports low-inductance, high-current PCB layouts. The package is RoHS-compliant and Pb-free, with marking "FFSD0665A" on the top surface. FFSD0665A's pinout and mechanical data are detailed on page 2 of the onsemi datasheet.