onsemi FFSD10120A

Overview

FFSD10120A from onsemi is a silicon carbide (SiC) Schottky diode rated for 1200 V peak repetitive reverse voltage and 10 A continuous forward current at TC < 164°C, with zero reverse recovery charge and positive temperature coefficient for stable paralleling-used in high-efficiency solar inverters and UPS power switching stages.

For engineers reviewing the FFSD10120A datasheet, pinout, applications, or equivalent options, key selection criteria include avalanche energy rating (100 mJ), junction-to-case thermal resistance (0.53°C/W), forward voltage at 10 A and 175°C (2.0–2.4 V), and DPAK package compatibility with high-power thermal management.

Technical Context

The FFSD10120A leverages SiC material to eliminate reverse recovery current and deliver temperature-independent switching behavior. Its 1200 V blocking capability and 100 mJ single-pulse avalanche energy rating enable robust operation in unclamped inductive switching circuits.

Designed for high-frequency power conversion, it exhibits low capacitive charge (62 nC at 800 V) and reduced capacitance (47 pF at 800 V), supporting faster switching transitions and lower EMI generation compared to silicon diodes.

Key Specifications

Pinout & Package

FFSD10120A uses the DPAK (Case 369AS) surface-mount package measuring 6.10 × 6.54 × 2.29 mm with 4.57 mm lead pitch. The package features exposed drain pad for thermal enhancement and mechanical stability under thermal cycling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10120A and STPSC10H12D, the FFSD10120A offers superior thermal resistance (0.53°C/W), higher avalanche energy (100 mJ), and dual-cathode terminals enabling lower inductance and better current sharing-making it optimal for high-reliability, high-power-density 1200 V SiC rectification.

Availability

FFSD10120A is available at Aetrix Electronics and suitable for solar inverters, UPS systems, and industrial SMPS requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for FFSD10120A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The FFSD10120A belongs to onsemi's EliteSiC Schottky diode product line, engineered specifically for high-voltage, high-frequency power conversion where zero reverse recovery and high-temperature reliability are mandatory.

FAQ

What is the maximum junction temperature rating for FFSD10120A?

The FFSD10120A has a maximum junction temperature rating of +175°C, verified per absolute maximum ratings in the official onsemi datasheet (Rev. 6, Dec. 2023). This allows operation in sealed, fanless enclosures and high-ambient environments such as outdoor solar inverters. Derating curves confirm usable current up to 22 A at T_C = 135°C, making FFSD10120A suitable for thermally demanding industrial applications.

Does FFSD10120A have reverse recovery current?

No, the FFSD10120A is a silicon carbide Schottky diode and exhibits no reverse recovery current due to its majority-carrier conduction mechanism. This eliminates switching tail current and associated losses, confirmed by zero Q_RR in the datasheet's electrical characteristics and typical reverse recovery waveforms. The absence of reverse recovery makes FFSD10120A ideal for high-frequency PFC and inverter stages where EMI and efficiency are critical.

What is the thermal resistance (R_JC) of FFSD10120A?

The FFSD10120A has a maximum junction-to-case thermal resistance (R_JC) of 0.53°C/W, measured under standard test conditions per the onsemi datasheet. This value is achieved using the exposed cathode pad in the DPAK package, which must be soldered to a minimum 250 mm² copper area on the PCB. The low R_JC enables efficient heat transfer to the heatsink, supporting high-power density designs without forced air cooling.

Is FFSD10120A RoHS compliant and halogen free?

Yes, the FFSD10120A is Pb-free, halogen-free/BFR-free, and RoHS compliant, as explicitly stated in the "Features" section of the onsemi datasheet. It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), allowing standard reflow soldering without baking. The device carries the "G" Pb-free indicator marking per onsemi's generic marking diagram, confirming compliance for use in environmentally regulated industrial and consumer electronics.

What is the avalanche energy rating of FFSD10120A?

The FFSD10120A is avalanche rated at 100 mJ under specified test conditions (T_J = 25°C, L = 0.5 mH, I_AS = 20 A, V = 150 V), per the Absolute Maximum Ratings table. This rating enables reliable operation during unclamped inductive switching events-such as IGBT turn-off in motor drives or UPS hold-up-without requiring external snubbers. The 100 mJ specification is validated and guaranteed across the full temperature range.