onsemi FFSH3065B-F085
- Part No.:
- FFSH3065B-F085
- Manufacturer:
- onsemi
- Category:
- Single Diodes
- Package:
- TO-247-2
- Datasheet:
-
FFSH3065B-F085.pdf
- Description:
- DIODE SIL CARB 650V 37A TO247-2
- Quantity:
- Payment:

- Shipping:

Inventory:466
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Product details
Overview
FFSH3065B-F085 from onsemi is a silicon carbide (SiC) Schottky diode rated for 650 V peak repetitive reverse voltage, 30 A continuous forward current at TC < 146°C, and 175°C maximum junction temperature, delivering zero reverse recovery charge and stable switching across temperature in automotive onboard chargers and DC-DC converters.
For engineers reviewing the FFSH3065B-F085 datasheet, pinout, applications, or equivalent options, key selection criteria include avalanche energy rating (144 mJ), thermal resistance (0.56 °C/W), forward voltage (1.38 V typ @ 30 A, 25°C), reverse leakage (0.5 µA typ @ 650 V, 25°C), and TO-247-2L package compatibility with high-power thermal management.
Technical Context
This SiC Schottky diode replaces conventional silicon rectifiers in high-frequency, high-efficiency power conversion stages where reverse recovery losses must be eliminated. Its unipolar conduction mechanism ensures no minority-carrier storage, enabling operation up to 1 MHz with minimal switching loss and stable VF over −55°C to +175°C.
The device features a positive temperature coefficient for forward voltage and avalanche-rated ruggedness (144 mJ single-pulse, 0.5 mH, 24 A), supporting reliable operation under transient overvoltage conditions without external snubbers in automotive-grade HEV/EV power systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Withstands peak reverse voltage in 800 V-class DC bus applications without breakdown. |
| IF (cont.) | 30 A @ TC < 146°C - Sustains full-rated output current in compact heatsink designs with case temperature control. |
| VF (typ) | 1.38 V @ 30 A, 25°C - Enables >98% efficiency in 3.3 kW–6.6 kW OBC boost stages at light-to-moderate load. |
| EAS | 144 mJ - Absorbs unclamped inductive energy during fault events without failure in DC-DC converter primary-side clamping. |
| RJC | 0.56 °C/W - Allows direct mounting to aluminum heatsinks for thermal dissipation up to 268 W at TC = 25°C. |
| TJ max | 175°C - Supports operation in under-hood environments with no derating penalty up to ambient 125°C. |
| QC | 73 nC @ 400 V - Reduces capacitive turn-on loss and EMI generation compared to silicon diodes in hard-switched PFC. |
Pinout & Package
FFSH3065B-F085 uses the TO-247-2LD (Case 340CL) package: insulated tab, 2-terminal configuration, screw-mount compatible (M3, 60 N·cm torque), with cathode and anode leads optimized for low-inductance high-current PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | High-side return path | Connected to positive rail in boost/flyback topologies; carries full output current with minimal parasitic inductance. |
| 2 (Anode) | Low-side switching node | Interfaces directly with MOSFET/IGBT source or emitter; enables synchronous rectification in isolated DC-DC secondaries. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates reverse recovery current and associated switching loss, enabling 2× higher operating frequency than Si FRDs. |
| AEC-Q101 qualified | Validated for automotive power electronics per stress test requirements including HTGB, HTRB, and temperature cycling. |
| Positive dVF/dTJ | Enables inherent current sharing when paralleling multiple FFSH3065B-F085 units without external ballasting resistors. |
| 175°C junction rating | Permits simplified thermal design in space-constrained EV power modules by removing need for active cooling below 125°C ambient. |
| 144 mJ avalanche energy | Withstands repetitive unclamped inductive switching events in bidirectional DC-DC converters without derating or protection circuitry. |
Applications
| Automotive Onboard Charger (OBC) | High-Voltage DC-DC Converter |
|---|---|
Use Scenario: Boost PFC stage in 6.6 kW bidirectional OBC converting AC grid to 400 V/800 V DC bus. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in interleaved boost cells, conducting during MOSFET off-time. Use Value: Zero Qrr reduces total switching loss by 35% vs. Si FRD, enabling 100 kHz+ operation and 25% smaller passive filter components. | Use Scenario: Isolation-side synchronous rectifier in 3.3 kW LLC resonant DC-DC converter powering 12 V auxiliary systems from 400 V battery. IC Role / Device Role / Timing Role: Secondary-side rectifier replacing Si Schottky, conducting during transformer secondary voltage polarity. Use Value: 1.38 V VF at 30 A lowers conduction loss by 1.8 W per device vs. 150 V SiC diode, improving full-load efficiency from 94.2% to 95.1%. |
| Industrial Solar Inverter | Traction Inverter Auxiliary Supply |
Use Scenario: Freewheeling path in three-phase Vienna rectifier front-end handling 10 kW PV input. IC Role / Device Role / Timing Role: Anti-parallel diode for SiC MOSFETs in active rectification topology. Use Value: Stable VF over temperature avoids current imbalance across parallel legs, maintaining THD < 3% up to 60°C ambient. | Use Scenario: Input rectifier in isolated flyback supply powering gate drivers and MCU in 800 V traction inverter control board. IC Role / Device Role / Timing Role: High-reliability input diode handling 400 V DC link transients during IGBT short-circuit events. Use Value: 144 mJ EAS rating eliminates need for TVS clamping, reducing BOM count by one component per supply channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D03060E-TR | 600 V VRRM, 30 A, TO-220-2L, RJC = 0.75 °C/W, QC = 62 nC | Limited to 600 V systems; lower thermal performance requires larger heatsink area. | Preferred for cost-sensitive 400 V industrial SMPS where 650 V margin is unnecessary. |
| STPSC3065DL | 650 V VRRM, 30 A, TO-247-2L, RJC = 0.65 °C/W, VF = 1.5 V typ @ 30 A | Slightly higher forward drop increases conduction loss by ~0.36 W at full load. | Suitable when ST's packaging logistics or qualification history align better with OEM sourcing policy. |
Compared with C3D03060E-TR and STPSC3065DL, the FFSH3065B-F085 offers superior thermal resistance (0.56 °C/W) and lower typical forward voltage (1.38 V), making it optimal for space-constrained, high-efficiency automotive OBC and DC-DC designs where thermal headroom and conduction loss are critical.
Availability
FFSH3065B-F085 is available at Aetrix Electronics and suitable for automotive HEV/EV onboard chargers, high-voltage DC-DC converters, and industrial solar inverters requiring stable component supply with AEC-Q101 compliance and long-term production continuity.
Supply support for FFSH3065B-F085 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in automotive, industrial, cloud, and IoT power solutions.
The EliteSiC product line delivers high-reliability silicon carbide discrete devices engineered specifically for automotive-grade traction inverters, onboard chargers, and DC-DC converters demanding zero reverse recovery, high-temperature operation, and rugged avalanche performance.
FAQ
What is the maximum continuous forward current rating for FFSH3065B-F085?
The FFSH3065B-F085 supports 30 A continuous forward current when case temperature remains below 146°C, and 37 A when case temperature is held below 135°C. This derating behavior is defined in the Absolute Maximum Ratings table and confirmed by thermal testing per JEDEC JESD51-1. The device's 0.56 °C/W RJC enables these ratings in properly heatsinked TO-247-2L layouts.
Is FFSH3065B-F085 qualified for automotive applications?
Yes, the FFSH3065B-F085 is AEC-Q101 qualified, having passed all required stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, and unbiased highly accelerated stress test (UHAST). This qualification confirms suitability for under-hood automotive power electronics such as HEV/EV onboard chargers and DC-DC converters.
Does FFSH3065B-F085 have reverse recovery charge?
No, the FFSH3065B-F085 is a silicon carbide Schottky diode with majority-carrier conduction, resulting in zero reverse recovery charge (Qrr = 0) and no reverse recovery current. This eliminates associated switching losses and EMI, enabling high-frequency operation in PFC and DC-DC stages. Measured capacitive charge (QC) is 73 nC at 400 V, unrelated to recovery behavior.
What is the avalanche energy rating of FFSH3065B-F085?
The FFSH3065B-F085 is rated for 144 mJ single-pulse avalanche energy under specified test conditions: starting junction temperature of 25°C, inductance L = 0.5 mH, avalanche current IAS = 24 A, and V = 50 V. This ruggedness supports fault-tolerant design in unclamped inductive switching applications like DC-DC converter primary-side clamping without external snubbers.
What package type does FFSH3065B-F085 use?
The FFSH3065B-F085 uses the TO-247-2LD package (Case 340CL), a 2-terminal insulated-tab variant of TO-247 designed for high-current, high-voltage discrete power devices. It features M3 screw-mount capability (60 N·cm torque), low thermal resistance (0.56 °C/W), and mechanical dimensions compliant with industry-standard TO-247 footprints for drop-in replacement in existing layouts.
FFSH3065B-F085 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-247-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 37A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 30 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 40 µA @ 650 V
- Capacitance @ Vr, F:
- 1260pF @ 1V, 100kHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
FFSH3065B-F085 FAQ
1.How can I place an order for FFSH3065B-F085 through Aetrix?
Please submit a Request for Quotation (RFQ) for FFSH3065B-F085 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FFSH3065B-F085 reliable?
The price and inventory of FFSH3065B-F085 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FFSH3065B-F085 is usually 5 days.
3.What payment methods are accepted for FFSH3065B-F085?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FFSH3065B-F085 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FFSH3065B-F085?
FFSH3065B-F085 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FFSH3065B-F085 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FFSH3065B-F085?
For technical support, including FFSH3065B-F085 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FFSH3065B-F085 requirements.
6.How does Aetrix verify that FFSH3065B-F085 is sourced from the original manufacturer or authorized distributors?
All FFSH3065B-F085 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FFSH3065B-F085 meets industry standards.
7.What is the process for return or replacement of FFSH3065B-F085?
All FFSH3065B-F085 units undergo pre-shipment inspection (PSI). If there is an issue with FFSH3065B-F085, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FFSH3065B-F085 part is unused and in its original packaging.
Return procedure for FFSH3065B-F085:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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