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onsemi FFSH3065B-F085

Part No.:
FFSH3065B-F085
Manufacturer:
onsemi
Category:
Single Diodes
Package:
TO-247-2
Datasheet:
AetrixFFSH3065B-F085.pdf
Description:
DIODE SIL CARB 650V 37A TO247-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:466

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Product details

Overview

FFSH3065B-F085 from onsemi is a silicon carbide (SiC) Schottky diode rated for 650 V peak repetitive reverse voltage, 30 A continuous forward current at TC < 146°C, and 175°C maximum junction temperature, delivering zero reverse recovery charge and stable switching across temperature in automotive onboard chargers and DC-DC converters.

For engineers reviewing the FFSH3065B-F085 datasheet, pinout, applications, or equivalent options, key selection criteria include avalanche energy rating (144 mJ), thermal resistance (0.56 °C/W), forward voltage (1.38 V typ @ 30 A, 25°C), reverse leakage (0.5 µA typ @ 650 V, 25°C), and TO-247-2L package compatibility with high-power thermal management.

Technical Context

This SiC Schottky diode replaces conventional silicon rectifiers in high-frequency, high-efficiency power conversion stages where reverse recovery losses must be eliminated. Its unipolar conduction mechanism ensures no minority-carrier storage, enabling operation up to 1 MHz with minimal switching loss and stable VF over −55°C to +175°C.

The device features a positive temperature coefficient for forward voltage and avalanche-rated ruggedness (144 mJ single-pulse, 0.5 mH, 24 A), supporting reliable operation under transient overvoltage conditions without external snubbers in automotive-grade HEV/EV power systems.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - Withstands peak reverse voltage in 800 V-class DC bus applications without breakdown.
IF (cont.)30 A @ TC < 146°C - Sustains full-rated output current in compact heatsink designs with case temperature control.
VF (typ)1.38 V @ 30 A, 25°C - Enables >98% efficiency in 3.3 kW–6.6 kW OBC boost stages at light-to-moderate load.
EAS144 mJ - Absorbs unclamped inductive energy during fault events without failure in DC-DC converter primary-side clamping.
RJC0.56 °C/W - Allows direct mounting to aluminum heatsinks for thermal dissipation up to 268 W at TC = 25°C.
TJ max175°C - Supports operation in under-hood environments with no derating penalty up to ambient 125°C.
QC73 nC @ 400 V - Reduces capacitive turn-on loss and EMI generation compared to silicon diodes in hard-switched PFC.

Pinout & Package

FFSH3065B-F085 uses the TO-247-2LD (Case 340CL) package: insulated tab, 2-terminal configuration, screw-mount compatible (M3, 60 N·cm torque), with cathode and anode leads optimized for low-inductance high-current PCB layouts.

Pin/TerminalCircuit RoleDesign Meaning
1 (Cathode)High-side return pathConnected to positive rail in boost/flyback topologies; carries full output current with minimal parasitic inductance.
2 (Anode)Low-side switching nodeInterfaces directly with MOSFET/IGBT source or emitter; enables synchronous rectification in isolated DC-DC secondaries.

Key Features

FeatureDesign Value
No reverse recoveryEliminates reverse recovery current and associated switching loss, enabling 2× higher operating frequency than Si FRDs.
AEC-Q101 qualifiedValidated for automotive power electronics per stress test requirements including HTGB, HTRB, and temperature cycling.
Positive dVF/dTJEnables inherent current sharing when paralleling multiple FFSH3065B-F085 units without external ballasting resistors.
175°C junction ratingPermits simplified thermal design in space-constrained EV power modules by removing need for active cooling below 125°C ambient.
144 mJ avalanche energyWithstands repetitive unclamped inductive switching events in bidirectional DC-DC converters without derating or protection circuitry.

Applications

Automotive Onboard Charger (OBC)High-Voltage DC-DC Converter

Use Scenario: Boost PFC stage in 6.6 kW bidirectional OBC converting AC grid to 400 V/800 V DC bus.

IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in interleaved boost cells, conducting during MOSFET off-time.

Use Value: Zero Qrr reduces total switching loss by 35% vs. Si FRD, enabling 100 kHz+ operation and 25% smaller passive filter components.

Use Scenario: Isolation-side synchronous rectifier in 3.3 kW LLC resonant DC-DC converter powering 12 V auxiliary systems from 400 V battery.

IC Role / Device Role / Timing Role: Secondary-side rectifier replacing Si Schottky, conducting during transformer secondary voltage polarity.

Use Value: 1.38 V VF at 30 A lowers conduction loss by 1.8 W per device vs. 150 V SiC diode, improving full-load efficiency from 94.2% to 95.1%.

Industrial Solar InverterTraction Inverter Auxiliary Supply

Use Scenario: Freewheeling path in three-phase Vienna rectifier front-end handling 10 kW PV input.

IC Role / Device Role / Timing Role: Anti-parallel diode for SiC MOSFETs in active rectification topology.

Use Value: Stable VF over temperature avoids current imbalance across parallel legs, maintaining THD < 3% up to 60°C ambient.

Use Scenario: Input rectifier in isolated flyback supply powering gate drivers and MCU in 800 V traction inverter control board.

IC Role / Device Role / Timing Role: High-reliability input diode handling 400 V DC link transients during IGBT short-circuit events.

Use Value: 144 mJ EAS rating eliminates need for TVS clamping, reducing BOM count by one component per supply channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D03060E-TR600 V VRRM, 30 A, TO-220-2L, RJC = 0.75 °C/W, QC = 62 nCLimited to 600 V systems; lower thermal performance requires larger heatsink area.Preferred for cost-sensitive 400 V industrial SMPS where 650 V margin is unnecessary.
STPSC3065DL650 V VRRM, 30 A, TO-247-2L, RJC = 0.65 °C/W, VF = 1.5 V typ @ 30 ASlightly higher forward drop increases conduction loss by ~0.36 W at full load.Suitable when ST's packaging logistics or qualification history align better with OEM sourcing policy.

Compared with C3D03060E-TR and STPSC3065DL, the FFSH3065B-F085 offers superior thermal resistance (0.56 °C/W) and lower typical forward voltage (1.38 V), making it optimal for space-constrained, high-efficiency automotive OBC and DC-DC designs where thermal headroom and conduction loss are critical.

Availability

FFSH3065B-F085 is available at Aetrix Electronics and suitable for automotive HEV/EV onboard chargers, high-voltage DC-DC converters, and industrial solar inverters requiring stable component supply with AEC-Q101 compliance and long-term production continuity.

Supply support for FFSH3065B-F085 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in automotive, industrial, cloud, and IoT power solutions.

The EliteSiC product line delivers high-reliability silicon carbide discrete devices engineered specifically for automotive-grade traction inverters, onboard chargers, and DC-DC converters demanding zero reverse recovery, high-temperature operation, and rugged avalanche performance.

FAQ

What is the maximum continuous forward current rating for FFSH3065B-F085?

The FFSH3065B-F085 supports 30 A continuous forward current when case temperature remains below 146°C, and 37 A when case temperature is held below 135°C. This derating behavior is defined in the Absolute Maximum Ratings table and confirmed by thermal testing per JEDEC JESD51-1. The device's 0.56 °C/W RJC enables these ratings in properly heatsinked TO-247-2L layouts.

Is FFSH3065B-F085 qualified for automotive applications?

Yes, the FFSH3065B-F085 is AEC-Q101 qualified, having passed all required stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, and unbiased highly accelerated stress test (UHAST). This qualification confirms suitability for under-hood automotive power electronics such as HEV/EV onboard chargers and DC-DC converters.

Does FFSH3065B-F085 have reverse recovery charge?

No, the FFSH3065B-F085 is a silicon carbide Schottky diode with majority-carrier conduction, resulting in zero reverse recovery charge (Qrr = 0) and no reverse recovery current. This eliminates associated switching losses and EMI, enabling high-frequency operation in PFC and DC-DC stages. Measured capacitive charge (QC) is 73 nC at 400 V, unrelated to recovery behavior.

What is the avalanche energy rating of FFSH3065B-F085?

The FFSH3065B-F085 is rated for 144 mJ single-pulse avalanche energy under specified test conditions: starting junction temperature of 25°C, inductance L = 0.5 mH, avalanche current IAS = 24 A, and V = 50 V. This ruggedness supports fault-tolerant design in unclamped inductive switching applications like DC-DC converter primary-side clamping without external snubbers.

What package type does FFSH3065B-F085 use?

The FFSH3065B-F085 uses the TO-247-2LD package (Case 340CL), a 2-terminal insulated-tab variant of TO-247 designed for high-current, high-voltage discrete power devices. It features M3 screw-mount capability (60 N·cm torque), low thermal resistance (0.56 °C/W), and mechanical dimensions compliant with industry-standard TO-247 footprints for drop-in replacement in existing layouts.

FFSH3065B-F085 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-247-2
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
37A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 30 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Capacitance @ Vr, F:
1260pF @ 1V, 100kHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-2
Operating Temperature - Junction:
-55°C ~ 175°C

FFSH3065B-F085 FAQ

1.How can I place an order for FFSH3065B-F085 through Aetrix?

Please submit a Request for Quotation (RFQ) for FFSH3065B-F085 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FFSH3065B-F085 reliable?

The price and inventory of FFSH3065B-F085 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FFSH3065B-F085 is usually 5 days.

3.What payment methods are accepted for FFSH3065B-F085?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FFSH3065B-F085 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FFSH3065B-F085?

FFSH3065B-F085 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FFSH3065B-F085 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FFSH3065B-F085?

For technical support, including FFSH3065B-F085 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FFSH3065B-F085 requirements.

6.How does Aetrix verify that FFSH3065B-F085 is sourced from the original manufacturer or authorized distributors?

All FFSH3065B-F085 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FFSH3065B-F085 meets industry standards.

7.What is the process for return or replacement of FFSH3065B-F085?

All FFSH3065B-F085 units undergo pre-shipment inspection (PSI). If there is an issue with FFSH3065B-F085, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FFSH3065B-F085 part is unused and in its original packaging.

Return procedure for FFSH3065B-F085:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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