onsemi FFSP1065B

Overview

FFSP1065B from onsemi is a silicon carbide (SiC) Schottky diode rated for 650 V peak repetitive reverse voltage and 10 A continuous forward current at TC < 139°C, with no reverse recovery current and a maximum junction temperature of 175°C. It delivers high surge current capacity (650 A @ 25°C, 10 s), low forward voltage (1.38 V typ. @ 10 A, 25°C), and is used in high-efficiency power switching circuits such as solar inverters and UPS systems.

For engineers reviewing the FFSP1065B datasheet, pinout, applications, or equivalent options, key selection criteria include its avalanche rating (49 mJ), thermal resistance (2.0 °C/W), TO-220-2L package, SiC material benefits, and absence of reverse recovery-critical for high-frequency, high-reliability SMPS designs.

Technical Context

The FFSP1065B leverages wide-bandgap SiC technology to eliminate reverse recovery charge and associated switching losses, enabling operation at higher frequencies than silicon diodes. Its positive temperature coefficient for forward voltage simplifies parallel operation, and its 175°C max junction temperature supports compact thermal design in demanding environments.

Designed for unidirectional power conversion, the device features low capacitive charge (25 nC @ 400 V) and stable reverse leakage (≤160 µA @ 650 V, 175°C), making it suitable for hard-switched and resonant topologies where EMI reduction and efficiency are critical.

Key Specifications

Pinout & Package

FFSP1065B uses the TO-220-2L (Case 340BB) package: a through-hole, 2-terminal, insulated-tab power package with standardized mechanical dimensions and thermal performance. The case serves as the cathode terminal, and the lead is the anode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC10065DL, the FFSP1065B offers verified avalanche ruggedness (49 mJ) in the widely adopted TO-220-2L form factor, balancing thermal capability, layout compatibility, and transient robustness for mainstream industrial and renewable energy systems.

Availability

FFSP1065B is available at Aetrix Electronics and suitable for solar inverters, UPS systems, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant SiC power devices.

Supply support for FFSP1065B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The EliteSiC product line, including FFSP1065B, was engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, uninterruptible power, and industrial motor control systems.

FAQ

What is the maximum continuous forward current rating for FFSP1065B?

The FFSP1065B is rated for 10 A continuous rectified forward current at case temperature below 139°C. At lower case temperatures (e.g., TC < 135°C), the rating increases to 11 A. This rating assumes proper heatsinking and thermal management per the 2.0 °C/W junction-to-case thermal resistance specified in the datasheet. Exceeding these limits risks thermal runaway and permanent degradation of the FFSP1065B.

Does FFSP1065B have reverse recovery charge?

No, the FFSP1065B is a silicon carbide Schottky diode and exhibits zero reverse recovery charge (Q_rr = 0). This is a fundamental property of its majority-carrier conduction mechanism. As confirmed in the datasheet's "No Reverse Recovery / No Forward Recovery" feature list and electrical characteristics, the FFSP1065B eliminates switching losses and EMI associated with minority-carrier storage, making it ideal for high-frequency power conversion where the FFSP1065B replaces traditional silicon fast recovery diodes.

What is the avalanche energy rating of FFSP1065B and how is it tested?

The FFSP1065B has a single-pulse avalanche energy rating of 49 mJ, measured under test conditions of starting junction temperature 25°C, inductance L = 0.5 mH, avalanche current I_AS = 14 A, and voltage V = 50 V. This rating is validated per JEDEC standards and confirms the FFSP1065B's ability to absorb transient inductive energy without failure-critical in UPS and motor drive freewheeling applications where the FFSP1065B may experience unclamped inductive switching.

Can FFSP1065B be paralleled with other diodes for higher current handling?

Yes, the FFSP1065B can be safely paralleled due to its positive temperature coefficient of forward voltage, which promotes natural current sharing as temperature rises. This behavior is explicitly cited in the datasheet features and eliminates the need for external current-balancing resistors. When paralleling multiple FFSP1065B units, ensure symmetrical PCB layout, matched thermal paths, and identical gate drive (if used with active switches) to maintain balanced conduction and avoid localized overheating of any individual FFSP1065B.

What package type does FFSP1065B use and what are its mounting considerations?

The FFSP1065B uses the TO-220-2L (Case 340BB) package, where the metal tab is the cathode terminal and the lead is the anode. Mounting requires electrical isolation of the tab from the heatsink unless the cathode reference is common to the heatsink potential. Thermal interface material must be applied uniformly, and torque on the mounting screw must not exceed 0.5 N·m to avoid package damage. The FFSP1065B's mechanical outline and dimension tolerances comply with JEDEC TO-220 Issue K, Variation AC.