onsemi FFSP3065B

Overview

FFSP3065B from onsemi is a silicon carbide (SiC) Schottky diode rated for 30 A continuous forward current and 650 V peak repetitive reverse voltage in a TO-220-2L package. It delivers zero reverse recovery, 175°C maximum junction temperature, and 144 mJ single-pulse avalanche energy - enabling high-efficiency, high-frequency power conversion in solar inverters and UPS systems.

For engineers reviewing the FFSP3065B datasheet, pinout, applications, or equivalent options, key selection criteria include its 1.38 V typical forward voltage at 30 A/25°C, 0.76 °C/W junction-to-case thermal resistance, absence of reverse recovery current, and compatibility with high-temperature, high-dV/dt switching environments.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency hard-switched topologies. Its unipolar conduction mechanism eliminates minority-carrier storage, resulting in no reverse recovery charge (Qrr = 0) and temperature-independent switching behavior across −55°C to +175°C operating range.

The device features a positive temperature coefficient for forward voltage and avalanche-rated ruggedness (144 mJ), supporting reliable operation under transient overvoltage conditions without external snubbers. Its low capacitive charge (74 nC at 400 V) and reduced capacitance (108 pF at 400 V) minimize switching losses and EMI generation in DC-DC and AC-DC converters.

Key Specifications

Pinout & Package

FFSP3065B uses a TO-220-2L package (Case 340BB) with isolated tab (cathode-connected metal flange) and two leads: Pin 1 is cathode, Pin 2 is anode. The package provides mechanical robustness, standardized mounting, and direct thermal path from die to heatsink via the insulated tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D03065E and STPSC3065DLF, the FFSP3065B offers the lowest typical forward voltage at room temperature (1.38 V), best thermal resistance (0.76 °C/W), and optimal balance of cost, availability, and design-in maturity for mainstream solar and UPS applications.

Availability

FFSP3065B is available at Aetrix Electronics and suitable for solar inverters, industrial UPS systems, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for FFSP3065B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The EliteSiC product line, including FFSP3065B, was engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, data center, and industrial motor control applications.

FAQ

What is the maximum continuous forward current rating for FFSP3065B?

The FFSP3065B is rated for 30 A continuous rectified forward current when case temperature remains below 135°C. At higher case temperatures, current must be derated per the datasheet's Figure 3; for example, at 150°C case temperature, the maximum allowable continuous current drops to approximately 25 A to maintain safe junction temperature limits.

Does FFSP3065B have reverse recovery charge (Qrr)?

No, the FFSP3065B is a silicon carbide Schottky diode and exhibits no reverse recovery charge (Qrr = 0). This is confirmed in the datasheet's "No Reverse Recovery / No Forward Recovery" feature list and electrical characteristics - eliminating switching losses and EMI associated with minority-carrier devices like silicon fast recovery diodes.

What is the thermal resistance from junction to case (RθJC) for FFSP3065B?

The FFSP3065B has a maximum junction-to-case thermal resistance (RθJC) of 0.76 °C/W, measured under standard test conditions. This low value enables efficient heat transfer to the heatsink and supports sustained operation at 175°C junction temperature when properly mounted with appropriate thermal interface material and mechanical clamping force.

Can FFSP3065B be used in parallel configurations?

Yes, the FFSP3065B can be paralleled effectively due to its positive temperature coefficient of forward voltage - meaning V_F increases with temperature, promoting natural current sharing. The datasheet explicitly lists "Ease of Paralleling" as a key feature, and no external ballasting resistors are required for stable multi-device operation in high-current applications like 3-phase inverters.

Is FFSP3065B RoHS compliant and lead-free?

Yes, FFSP3065B is fully RoHS compliant and lead-free, as stated in the datasheet's Features section. It is also halogen-free and BFR-free, meeting global environmental regulations for commercial and industrial electronic equipment without requiring exemptions or special handling.