Taiwan Semiconductor Corporation FR157G B0G

Overview

FR157G from Taiwan Semiconductor is a 1.5A, 1000V fast recovery rectifier diode in DO-204AC (DO-15) package, featuring 500 ns reverse recovery time, 1.3 V max forward voltage at 1.5 A, and 50 A surge current capability-used in high-efficiency DC-DC converters and switching inverters.

For engineers reviewing the FR157G datasheet, FR157G pinout, FR157G application, or FR157G equivalent, key selection criteria include peak reverse voltage rating (1000 V), thermal resistance (60 °C/W), junction temperature range (–55 to +150 °C), cathode-band polarity marking, and RoHS/halogen-free compliance for automotive-grade power conversion designs.

Technical Context

This discrete fast recovery rectifier employs a glass-passivated silicon junction optimized for low conduction loss and rapid charge removal during commutation. Its single-die configuration supports unidirectional current flow with controlled reverse recovery behavior critical for high-frequency switching topologies.

The device operates across –55 °C to +150 °C junction temperature, exhibits 5 µA max reverse leakage at 25 °C and 100 µA at 125 °C, and delivers stable performance under repetitive 8.3 ms half-sine surge conditions up to 50 A-enabling reliable operation in SMPS primary-side rectification.

Key Specifications

Pinout & Package

Package: DO-204AC (DO-15), axial-leaded, glass-passivated, RoHS/halogen-free molding compound (UL 94V-0), pure tin-plated leads, cathode indicated by band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Compared with STTH1L06S and MUR160, the FR157G provides higher voltage margin (1000 V), greater current capacity (1.5 A), and automotive-qualified variants-making it suitable for ruggedized 400–800 V DC bus systems where reliability and surge resilience are critical.

Availability

FR157G is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and automotive on-board chargers requiring stable component supply and long-term manufacturability.

Supply support for FR157G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The FR15xG series was designed specifically for high-reliability, high-efficiency AC/DC and DC/DC power conversion-emphasizing fast recovery, low V_F, and robust thermal performance in standard axial packages.

FAQ

What is the maximum repetitive peak reverse voltage rating for FR157G?

The FR157G has a maximum repetitive peak reverse voltage (V_RRM) of 1000 V. This rating defines the highest reverse-biased voltage the device can block repeatedly without breakdown under normal operating conditions. It is validated per JEDEC standards and applies across the full specified junction temperature range (–55 °C to +150 °C). The FR157G's 1000 V rating provides design margin for transient overvoltage events in 400–800 V DC bus applications.

Does FR157G have an AEC-Q101 qualified version?

Yes, the AEC-Q101 qualified version of FR157G is designated FR157GH. It undergoes additional stress testing-including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing-to meet automotive electronic component reliability requirements. The FR157GH shares identical electrical and thermal specifications with FR157G but is screened and documented for use in automotive powertrain and charging systems.

What is the reverse recovery time (t_rr) of FR157G and how is it measured?

The FR157G has a reverse recovery time (t_rr) of 500 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A per JEDEC Test Method JESD28-C. This parameter reflects the time required for minority carriers to be removed from the junction when transitioning from forward conduction to reverse blocking. The 500 ns value balances speed and softness to minimize switching noise in 100–500 kHz power converters.

Can FR157G replace FR156G in a design?

Yes, FR157G can directly replace FR156G (800 V V_RRM) in most applications due to its higher 1000 V reverse voltage rating, identical package (DO-15), pinout, and thermal characteristics. No layout or thermal redesign is needed. However, designers should verify that the increased voltage margin does not inadvertently affect snubber network tuning or gate drive coupling in sensitive high-speed topologies.

What is the junction-to-ambient thermal resistance (R_θJA) of FR157G and how does it impact PCB layout?

The FR157G has a junction-to-ambient thermal resistance (R_θJA) of 60 °C/W under standard JEDEC test conditions (single-layer 1 in² copper pad). This value assumes minimal copper area and natural convection. To maintain T_J ≤150 °C at 1.5 A, designers should provide ≥2 in² of 2-oz copper on both sides connected via thermal vias-especially in enclosed or high-ambient environments like server chassis or EV charging units.