Taiwan Semiconductor Corporation GBL08H

Overview

GBL08H from Taiwan Semiconductor is a 4A, 800V AEC-Q101-qualified standard bridge rectifier in GBL package, featuring glass-passivated junctions, <1.1V forward voltage at 4A/25°C, <500µA reverse leakage at 125°C, and 150A surge rating - used in automotive-grade SMPS and lighting ballasts.

For engineers reviewing the GBL08H datasheet, GBL08H pinout, GBL08H application, or GBL08H equivalent, key selection criteria include peak reverse voltage (800V), thermal resistance (R_θJL = 13°C/W), AEC-Q101 qualification status, and UL recognition (E-326243) for high-reliability power conversion designs.

Technical Context

The GBL08H integrates four silicon diodes in a single-phase full-wave bridge configuration with quad anode-cathode topology. Its glass-passivated junction ensures stable reverse characteristics across -55°C to +150°C operating range and supports 8.3ms non-repetitive surge currents up to 150A.

Thermally optimized for PCB mounting on 0.5"×0.5" copper pads, it delivers R_θJA = 32°C/W (free air) and R_θJC = 8°C/W, enabling reliable conduction at 4A continuous current when case temperature is held ≤50°C per absolute maximum ratings.

Key Specifications

Pinout & Package

Package: GBL - molded plastic case meeting UL 94V-0, matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance. Polarity marked on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with GBU8K and DF08MA, the GBL08H offers superior thermal performance in PCB-mounted applications and the lowest specified forward voltage among AEC-Q101-qualified 800V bridges in GBL package, directly improving efficiency and thermal headroom in automotive and industrial power supplies.

Availability

GBL08H is available at Aetrix Electronics and suitable for automotive LED drivers, industrial AC-DC adapters, commercial lighting ballasts, and medical power supply input stages requiring stable component supply with AEC-Q101 validation and UL recognition.

Supply support for GBL08H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The GBL08H belongs to TSC's AEC-Q101-qualified bridge rectifier product line, engineered for high-reliability AC-DC conversion in harsh environments where thermal robustness, long-term leakage stability, and safety certification are mandatory.

FAQ

What is the peak repetitive reverse voltage rating for GBL08H?

The GBL08H has a peak repetitive reverse voltage (V_RRM) rating of 800 V, as confirmed in the Absolute Maximum Ratings table of Taiwan Semiconductor's K2103 datasheet. This value defines the maximum reverse voltage the device can block repeatedly without breakdown and is validated across the full operating temperature range of –55°C to +150°C. The GBL08H is part of the GBL005–GBL10 family, where the numeric suffix directly indicates V_RRM in volts.

Is GBL08H qualified to AEC-Q101 standards?

Yes, the GBL08H is explicitly AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code and stated in the FEATURES section of the datasheet. This qualification covers stress tests including high-temperature operating life (HTOL), temperature cycling (TC), highly accelerated stress test (HAST), and unbiased highly accelerated stress test (UHAST). The GBL08H meets these requirements in its GBL package with glass-passivated junction construction.

What is the forward voltage drop of GBL08H at 4A and 25°C?

The forward voltage drop (V_F) of the GBL08H is guaranteed to be ≤1.1 V at 4A forward current and 25°C junction temperature, per the Electrical Specifications table. This value is measured per diode within the bridge, meaning the total conduction drop across two series diodes in the current path is ≤2.2 V. The datasheet also specifies a typical V_F of 1.0 V under the same conditions.

Does GBL08H have UL recognition, and what is the file number?

Yes, the GBL08H carries UL Recognition under file number E-326243, as documented in the FEATURES section and Ordering Information pages of the K2103 datasheet. This recognition applies to the entire GBL005–GBL10 family and confirms compliance with UL Standard 60747-4 for discrete semiconductors, supporting safety certification of end equipment in North America and other UL-accepting regions.

What is the junction-to-lead thermal resistance (R_θJL) of GBL08H?

The junction-to-lead thermal resistance (R_θJL) of the GBL08H is 13°C/W, as published in the Thermal Performance section of the datasheet. This parameter quantifies the thermal impedance between the silicon die and the soldered lead termination, and is critical for predicting solder-joint temperature rise under sustained current. It is measured under standardized JEDEC test conditions and applies to the GBL package with matte tin-plated leads.