Taiwan Semiconductor Corporation GBU1007H

Overview

GBU1007H from Taiwan Semiconductor is a 10A, 1000V AEC-Q101-qualified standard bridge rectifier in GBU package, featuring 220A surge current capability, 1500VRMS dielectric strength, and typical reverse leakage <5µA at 25°C. It serves as the AC-to-DC input stage in high-reliability automotive power supplies.

For engineers reviewing the GBU1007H datasheet, GBU1007H pinout, GBU1007H application, or GBU1007H equivalent, key selection criteria include peak reverse voltage rating (1000V), thermal resistance (R_θJC = 2°C/W), AEC-Q101 qualification status, and UL recognition (E-326243).

Technical Context

This quad-diode bridge integrates four silicon junction diodes in a single-phase full-wave configuration with common cathode/anode topology. Its GBU package enables surface-mount or through-hole mounting on PCBs with matte tin-plated leads compliant to J-STD-002 solderability standards.

The device operates across -55°C to +150°C junction temperature range and delivers stable forward conduction (V_F ≤ 1.1V @ 10A, 25°C) while maintaining low capacitance (94pF @ 1MHz, 4V) for minimal switching noise in SMPS front-end designs.

Key Specifications

Pinout & Package

Package: GBU - Molded plastic case with 4 leads (AC1, AC2, +, –), UL 94V-0 rated, 4.0g weight, matte tin-plated terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with GBU1007 and GBU10K, the GBU1007H uniquely combines AEC-Q101 qualification, UL recognition, and low leakage (<5µA), making it the sole choice for certified automotive and medical power supply designs requiring both reliability and regulatory compliance.

Availability

GBU1007H is available at Aetrix Electronics and suitable for automotive onboard chargers, industrial LED drivers, medical power supplies, and appliance SMPS requiring stable component supply with long-term lifecycle assurance.

Supply support for GBU1007H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The GBU series was developed specifically for high-reliability AC/DC front-end applications demanding robust surge handling, high-voltage isolation, and automotive-grade qualification in compact GBU packaging.

FAQ

What is the peak repetitive reverse voltage rating of the GBU1007H?

The GBU1007H has a peak repetitive reverse voltage (V_RRM) rating of 1000 V. This value is confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version M2103). The rating ensures the device blocks up to 1000V of reverse voltage across its AC terminals without breakdown, making it suitable for universal-input and high-line applications. This parameter is fixed for the GBU1007H variant and differs from lower-voltage members like GBU1001 (50V) or GBU1004 (400V).

Is the GBU1007H qualified to AEC-Q101 standards?

Yes, the GBU1007H is explicitly AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code and confirmed in the FEATURES section of the Taiwan Semiconductor datasheet. This qualification covers stress tests including temperature cycling, high-temperature reverse bias (HTRB), and unbiased highly accelerated stress test (UHAST). The standard GBU1007 (without "H") lacks this qualification. AEC-Q101 compliance makes the GBU1007H appropriate for automotive power modules where reliability under thermal and mechanical stress is critical.

What is the maximum average forward current rating for the GBU1007H?

The GBU1007H is rated for a maximum average forward current (I_F) of 10 A at case temperature T_C = 75°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and thermal management. Derating is required above 75°C case temperature, per the Forward Current Derating Curve in the datasheet. The 10 A rating applies to the entire bridge - not per diode - and reflects continuous conduction under sinusoidal half-wave or full-wave conditions with adequate thermal design.

Does the GBU1007H have UL recognition?

Yes, the GBU1007H carries UL Recognition under File # E-326243, as stated in the FEATURES section of the official datasheet. This recognition confirms compliance with UL Standard 60747-4 for discrete semiconductors, covering construction, flammability (UL 94V-0), and electrical safety. UL recognition supports end-equipment certification for commercial and industrial power supplies, particularly where regulatory approval is required for market access in North America and other UL-accepting regions.

What is the junction-to-case thermal resistance (R_θJC) of the GBU1007H?

The junction-to-case thermal resistance (R_θJC) of the GBU1007H is 2 °C/W, as published in the THERMAL PERFORMANCE section of the datasheet. This low value indicates highly efficient heat transfer from the silicon die to the external case surface, enabling effective thermal coupling to a heatsink or thermally enhanced PCB pad. It is measured under standardized conditions and is critical for calculating maximum allowable power dissipation and ensuring junction temperature remains within the -55°C to +150°C operational limit.