Taiwan Semiconductor Corporation GBU807-K

Overview

GBU807-K from Taiwan Semiconductor is a 8A, 1000V standard bridge rectifier in GBU package, configured as a quad diode arrangement for full-wave AC-to-DC conversion. It delivers 200A non-repetitive surge current capability, 1500VRMS dielectric strength, and typical reverse leakage <5µA at 25°C - deployed in high-reliability offline SMPS front-end stages.

For engineers reviewing the GBU807-K datasheet, GBU807-K pinout, GBU807-K application, or GBU807-K equivalent, key selection criteria include peak reverse voltage (1000V), thermal resistance (R_θJC = 2°C/W), junction temperature range (–55°C to +150°C), and UL recognition (E-326243).

Technical Context

The GBU807-K integrates four silicon diodes in a single-phase bridge configuration with common cathode/anode layout, enabling direct full-wave rectification without external interconnection. Its 1000V V_RRM rating supports universal-input (85–265V_AC) operation in high-line industrial power supplies.

Thermally optimized for PCB mounting, it exhibits R_θJA = 21°C/W (free air) and R_θJC = 2°C/W, allowing sustained 8A average forward current at case temperatures ≤85°C. Junction capacitance is 94pF per diode at 1MHz/4V, minimizing high-frequency switching noise in PFC stages.

Key Specifications

Pinout & Package

Package: GBU - molded plastic case with matte tin-plated leads, UL 94V-0 rated, 4.00g weight, designed for through-hole PCB mounting with 0.56 N·m max torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with GBU806-K, the GBU807-K provides essential 200V higher reverse blocking for 277VAC lighting and industrial systems; compared with GBU1007, it offers identical voltage rating with tighter thermal footprint and lower cost where 8A is sufficient.

Availability

GBU807-K is available at Aetrix Electronics and suitable for switching mode power supplies, LED drivers, and industrial adapters requiring stable component supply, long-term lifecycle support, and UL-recognized safety compliance.

Supply support for GBU807-K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in rectifiers, TVS diodes, MOSFETs, and power ICs since 1979.

The GBU series was developed specifically for high-reliability AC-DC front-end rectification in industrial, lighting, and consumer power supplies - emphasizing surge robustness, thermal performance, and global safety certification.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for GBU807-K?

The GBU807-K has a maximum repetitive peak reverse voltage (V_RRM) of 1000V. This rating is confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version F2103). The 1000V specification allows the GBU807-K to safely operate with 277VAC mains inputs including transients and tolerances. This value is fixed for the GBU807-K and differs from lower-voltage variants like GBU806-K (800V) and GBU805-K (600V).

Does GBU807-K meet UL safety certification requirements?

Yes, the GBU807-K is UL Recognized under File #E-326243. This certification applies to the entire GBU804-K through GBU807-K family and covers dielectric strength, flammability (UL 94V-0), and construction integrity. The UL recognition supports end-equipment compliance in North America and is explicitly stated in the Features section of the Taiwan Semiconductor datasheet. GBU807-K maintains this certification without deviation from the family baseline.

What is the thermal resistance from junction to case (R_θJC) for GBU807-K?

The junction-to-case thermal resistance (R_θJC) for GBU807-K is 2°C/W, as specified in the Thermal Performance section of the official datasheet. This value is consistent across the GBU804-K to GBU807-K series and reflects the device's ability to conduct heat efficiently from the silicon die to the external lead frame. This low R_θJC enables effective heatsinking in high-power-density applications where the GBU807-K is used.

Is GBU807-K halogen-free and RoHS compliant?

Yes, the GBU807-K is both RoHS compliant and halogen-free in accordance with IEC 61249-2-21. These environmental attributes are explicitly listed in the Features section of the Taiwan Semiconductor datasheet and apply uniformly to all variants in the GBU804-K–GBU807-K family. No material deviation exists between GBU807-K and other members regarding halogen content or RoHS status.

What is the typical junction capacitance (C_J) per diode in GBU807-K?

The typical junction capacitance (C_J) per diode in GBU807-K is 94pF, measured at 1MHz and VR = 4.0V. This value is documented in the Electrical Specifications table and distinguishes GBU807-K from GBU804-K (211pF); the reduction reflects process optimization for higher-voltage devices. C_J directly influences high-frequency switching behavior and EMI filter design in SMPS applications using the GBU807-K.