Taiwan Semiconductor Corporation GP1602H

Overview

GP1602H from Taiwan Semiconductor is a 16A, 100V AEC-Q101-qualified standard rectifier diode in TO-220AB package, featuring 1.1V max forward voltage at 8A and 150A surge capability. It delivers low power loss and high efficiency for automotive-grade DC/DC converters and switching inverters.

For engineers reviewing the GP1602H datasheet, GP1602H pinout, GP1602H application, or GP1602H equivalent, key selection criteria include repetitive peak reverse voltage (100V), junction-to-case thermal resistance (1.5°C/W), AEC-Q101 qualification status, and TO-220AB mechanical compatibility with heatsink mounting.

Technical Context

This dual-die standard rectifier operates as a unidirectional current path with polarity marked on case. Its 1.5°C/W R_θJC enables effective thermal transfer to heatsinks under continuous 16A conduction, while 150A I_FSM supports transient overload in switching converters.

Electrical behavior is defined by 1.1V V_F max at 8A/25°C and ≤10µA I_R at rated V_R/25°C, with junction capacitance of 50pF at 1MHz/4V - parameters critical for EMI control and switching loss estimation in 50–200kHz SMPS designs.

Key Specifications

Pinout & Package

TO-220AB package with three terminals: Anode (pin 1), Cathode (pin 2), and case-connected cathode tab (pin 3). Matte tin-plated leads meet J-STD-002 solderability; polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH1602D and MUR1620CT, GP1602H uniquely combines AEC-Q101 compliance, 100V optimized V_RRM, and dual-die TO-220AB construction - making it the only qualified choice for automotive 48V DC/DC rectification where reliability and thermal performance are prioritized over higher voltage headroom.

Availability

GP1602H is available at Aetrix Electronics and suitable for automotive power modules, industrial UPS systems, and solar microinverter designs requiring stable component supply with AEC-Q101 assurance and TO-220AB mechanical consistency.

Supply support for GP1602H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The GP1601–GP1607 series was developed specifically for high-efficiency, high-reliability rectification in automotive-grade power conversion - emphasizing AEC-Q101 qualification, low V_F, and robust surge capability in standardized TO-220AB packaging.

FAQ

What is the peak repetitive reverse voltage rating for GP1602H?

The GP1602H has a peak repetitive reverse voltage (V_RRM) rating of 100 V, verified per Taiwan Semiconductor's G2104 datasheet. This value defines the maximum reverse-biased voltage the GP1602H can block repeatedly without avalanche breakdown. It is strictly lower than GP1603H (200V) and higher than GP1601H (50V), reflecting its position in the GP160x family voltage grading.

Is GP1602H qualified to AEC-Q101 standards?

Yes, GP1602H is explicitly AEC-Q101 qualified, as confirmed by the "H" suffix in its ordering code and stated in the FEATURES section of the official datasheet. This qualification covers stress tests including temperature cycling, humidity bias, and high-temperature operating life - validating GP1602H for use in automotive powertrain and chassis applications where reliability under thermal and mechanical stress is critical.

What is the forward voltage specification for GP1602H at rated current?

The GP1602H specifies a maximum forward voltage (V_F) of 1.1 V at 8 A and 25°C junction temperature, per the ELECTRICAL SPECIFICATIONS table. This is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. At full-rated 16 A, V_F increases due to resistive heating but remains within safe operational limits defined by the thermal derating curve.

Does GP1602H have a dual-die configuration?

Yes, GP1602H uses a dual-die configuration housed in a single TO-220AB package, as documented in the KEY PARAMETERS section. This architecture allows independent anode and cathode terminals with shared thermal mass, enabling flexible circuit topologies such as center-tapped rectifiers or dual-output configurations without requiring two separate devices.

What is the junction-to-case thermal resistance of GP1602H?

The GP1602H has a typical junction-to-case thermal resistance (R_θJC) of 1.5°C/W, as published in the THERMAL PERFORMANCE table. This value is measured under standardized cold-plate conditions and reflects the intrinsic thermal path from silicon die to the metal tab. Effective heatsinking using the tab is essential to maintain T_J ≤ 150°C under 16 A continuous conduction.