Taiwan Semiconductor Corporation GPA801H

Overview

GPA801H from Taiwan Semiconductor is an AEC-Q101-qualified 8A, 50V standard rectifier diode in TO-220AC package, featuring low forward voltage (≤1.1 V at 8 A, 25°C), high surge capability (150 A, 8.3 ms), and junction-to-case thermal resistance of 2.5°C/W - used in automotive DC-DC converters and industrial switching inverters.

For engineers reviewing the GPA801H datasheet, GPA801H pinout, GPA801H application, or GPA801H equivalent, key selection criteria include repetitive peak reverse voltage (50 V), forward current rating (8 A), thermal performance (R_θJC = 2.5°C/W), AEC-Q101 qualification status, and TO-220AC mechanical compatibility with heatsink mounting.

Technical Context

The GPA801H is a single-die, glass-passivated silicon standard rectifier optimized for high-reliability power conversion. Its 50 V V_RRM and 150 A I_FSM support robust operation under transient overloads in automotive and industrial SMPS topologies.

With a maximum forward voltage of 1.1 V at 8 A and 25°C, and reverse leakage of only 5 µA at rated VR and 25°C, it delivers high efficiency while maintaining low conduction loss and minimal standby power dissipation.

Key Specifications

Pinout & Package

Package: TO-220AC - 3-lead, single-ended through-hole package with isolated tab (cathode-connected tab), matte tin-plated leads compliant with J-STD-002 solderability, UL 94V-0 molding compound, and JESD 201 Class 2 whisker resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH8R06D and MUR860E, the GPA801H provides optimal trade-off of low conduction loss, automotive qualification, and thermal performance specifically for 50 V-class power conversion - avoiding unnecessary voltage overhead or speed-related complexity.

Availability

GPA801H is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching inverters, and telecom power supplies requiring stable component supply with AEC-Q101 assurance and long-term production continuity.

Supply support for GPA801H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The GPA series is designed as a family of AEC-Q101-qualified standard rectifiers targeting high-reliability, high-current power conversion in harsh-environment applications - emphasizing thermal robustness, surge resilience, and process-controlled parametric consistency.

FAQ

What is the AEC-Q101 qualification status of GPA801H?

The GPA801H is explicitly AEC-Q101 qualified per the ordering code suffix "H" and product documentation. This qualification covers stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing - confirming suitability for automotive power electronics. GPA801H meets all AEC-Q101 requirements as verified by Taiwan Semiconductor's certification reports.

Is the cathode of GPA801H connected to the metal tab?

Yes, the metal tab on the GPA801H is electrically connected to the cathode terminal, as confirmed by the mechanical data, marking diagram, and TO-220AC package definition. This configuration requires electrical isolation from the heatsink unless the cathode node is at chassis ground potential. The polarity marking on the device body indicates cathode orientation.

What is the maximum junction temperature and how does it affect thermal design for GPA801H?

The GPA801H has a maximum junction temperature (T_J) of 150°C. With its R_θJC of 2.5°C/W, thermal design must ensure that power dissipation (I_F × V_F) does not cause T_J to exceed this limit. For example, at 8 A and 1.1 V, 8.8 W dissipation requires ≤13.6°C rise from case to ambient - achievable with a modest heatsink and proper mounting pressure.

How does GPA801H compare to GPA802H in terms of voltage rating and interchangeability?

The GPA801H has a 50 V V_RRM, while GPA802H is rated for 100 V. They share identical package (TO-220AC), current rating (8 A), thermal resistance (2.5°C/W), and AEC-Q101 qualification. However, they are not interchangeable without circuit review: substituting GPA801H in a 100 V design risks reverse breakdown, and GPA802H in a 50 V design incurs unnecessary cost and slightly higher V_F.

What is the reverse leakage current specification for GPA801H at elevated temperature?

The GPA801H specifies a maximum reverse leakage current (I_R) of 5 µA at 25°C and rated V_R, rising to 100 µA at 125°C. This temperature-dependent behavior is critical for low-power standby circuits - e.g., in automotive always-on modules - where cumulative leakage across multiple diodes could impact quiescent current budgets.