Taiwan Semiconductor Corporation GPA803H

Overview

GPA803H from Taiwan Semiconductor is an AEC-Q101-qualified 200V, 8A standard rectifier diode in TO-220AC package, featuring low forward voltage (1.1 V @ 8 A), high surge capability (150 A), and glass-passivated junction for automotive-grade reliability in DC-DC converters and switching inverters.

For engineers reviewing the GPA803H datasheet, GPA803H pinout, GPA803H application, or GPA803H equivalent, key selection criteria include repetitive peak reverse voltage (200 V), thermal resistance (2.5 °C/W), junction temperature range (–55 to +150 °C), and AEC-Q101 qualification status for under-hood power conversion designs.

Technical Context

This single-die standard rectifier operates with a glass-passivated PN junction, delivering stable conduction at 8 A average forward current and sustaining 200 V repetitive reverse voltage. Its 150 A non-repetitive surge rating supports transient-heavy topologies like flyback and boost converters.

Thermal performance is defined by a junction-to-case resistance of 2.5 °C/W, enabling efficient heat transfer to heatsinks in TO-220AC mounting. Reverse leakage remains ≤5 µA at 25 °C and ≤100 µA at 125 °C, supporting stable operation across automotive ambient conditions.

Key Specifications

Pinout & Package

TO-220AC package with 3-terminal configuration: Anode (lead 1), Cathode (lead 2), and metal tab (cathode-connected, electrically active). Leads are matte tin-plated, J-STD-002 solderable, and polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH8R02DJF and VS-8EWH02FN-M3, GPA803H uniquely balances AEC-Q101 compliance, 1.1 V VF ceiling, and 5 µA max IR at 25 °C-making it optimal for cost-sensitive automotive power modules requiring validated reliability without premium leakage performance.

Availability

GPA803H is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching inverters, and onboard charger front-end designs requiring stable component supply with AEC-Q101 assurance and TO-220AC mechanical compatibility.

Supply support for GPA803H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The GPA801–GPA807 family was designed specifically for high-reliability rectification in automotive power systems, emphasizing AEC-Q101 qualification, thermal robustness, and glass-passivated junction integrity under harsh operating conditions.

FAQ

What is the peak repetitive reverse voltage rating for GPA803H?

The GPA803H has a repetitive peak reverse voltage (VRRM) rating of 200 V, verified per the manufacturer's absolute maximum ratings table. This value defines the maximum reverse-biased voltage the device can block repeatedly without avalanche breakdown. It is tested under standard conditions (TA = 25 °C) and forms the basis for selecting appropriate derating margins in circuit design. The GPA803H is part of the GPA801–GPA807 series where "803" explicitly denotes the 200 V variant.

Is GPA803H qualified to AEC-Q101 standards?

Yes, GPA803H is explicitly AEC-Q101 qualified, as confirmed in the ordering information note ("H" suffix denotes AEC-Q101 qualification) and features list. This qualification includes stress tests for temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing (uHAST). The GPA803H meets all AEC-Q101 requirements for discrete semiconductors used in automotive power electronics, distinguishing it from non-H variants like GPA803.

What is the forward voltage drop of GPA803H at rated current?

The GPA803H exhibits a maximum forward voltage (VF) of 1.1 V at 8 A forward current and 25 °C junction temperature, per electrical specifications. This value is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. At elevated temperatures (e.g., 125 °C), VF decreases slightly due to semiconductor physics, but the 1.1 V max remains the design-limiting value for thermal and efficiency calculations. The GPA803H's VF is consistent across its production lot per TSC's G2103 revision.

Does GPA803H have a cathode-connected metal tab?

Yes, the metal tab of the GPA803H in TO-220AC package is internally connected to the cathode terminal, as confirmed by the mechanical data and marking diagram. This configuration requires electrical isolation from other circuit nodes unless intentional cathode grounding is part of the layout. Lead 2 is also the cathode, providing dual connection points. Polarity is marked on the device body, and the tab must be treated as an active terminal-not just a thermal pad-during PCB design and heatsink mounting.

What is the junction-to-case thermal resistance of GPA803H?

The GPA803H has a typical junction-to-case thermal resistance (R_θJC) of 2.5 °C/W, as specified in the Thermal Performance section. This value is measured under standardized conditions using a thermocouple on the case surface and reflects conduction-only thermal path efficiency. It enables accurate heatsink sizing for continuous 8 A operation at ambient temperatures up to 75 °C, assuming proper mounting pressure and thermal interface material. The GPA803H shares this R_θJC value with all members of the GPA801–GPA807 series in TO-220AC packaging.