Taiwan Semiconductor Corporation GPA806

Overview

GPA806 from Taiwan Semiconductor is a single-die, glass-passivated standard rectifier diode in TO-220AC package, rated for 8 A average forward current, 800 V repetitive peak reverse voltage (V_RRM), and 150 A non-repetitive surge current (I_FSM). It operates up to 150 °C junction temperature and serves as the primary output rectifier in high-efficiency DC–DC converters and switching inverters.

For engineers reviewing the GPA806 datasheet, GPA806 pinout, GPA806 application, or GPA806 equivalent, key selection criteria include its 1.1 V max forward voltage at 8 A/25 °C, 5 µA max reverse leakage at 25 °C, 2.5 °C/W junction-to-case thermal resistance, and AEC-Q101 qualification option (GPA806H) for automotive-grade reliability.

Technical Context

The GPA806 is a unidirectional silicon PN junction rectifier optimized for medium-voltage, medium-current switching power supplies. Its glass-passivated chip junction ensures stable reverse characteristics across temperature, while the TO-220AC package enables direct heatsink mounting with low thermal resistance (R_θJC = 2.5 °C/W).

Electrical behavior is defined by tight control of forward voltage (V_F ≤ 1.1 V @ 8 A, 25 °C), low reverse leakage (I_R ≤ 5 µA @ 25 °C, rated V_R), and high surge robustness (I_FSM = 150 A, 8.3 ms half-sine). Junction capacitance is specified at 50 pF (1 MHz, 4 V reverse bias), supporting predictable high-frequency turn-off behavior.

Key Specifications

Pinout & Package

Package: TO-220AC - Three-terminal, through-hole, single-die rectifier package with isolated metal tab (cathode-connected), matte tin-plated leads compliant with J-STD-002, UL 94V-0 molding compound, and JESD201 Class 2 whisker resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH8R06DJF and MUR880E, GPA806 delivers optimal balance of 800 V blocking, 1.1 V conduction loss, and AEC-Q101 readiness-making it preferred for automotive and industrial 800 V-class SMPS where reliability and thermal performance are critical.

Availability

GPA806 is available at Aetrix Electronics and suitable for DC–DC converter output rectification, switching inverter DC link protection, and industrial AC–DC front-end designs requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for GPA806 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The GPA801–GPA807 series was developed to deliver AEC-Q101-capable, high-reliability standard rectifiers with consistent V_F, surge robustness, and thermal performance across 50–1000 V voltage grades for power conversion systems.

FAQ

What is the maximum junction temperature rating for GPA806?

The GPA806 has a maximum junction temperature (T_J) rating of +150 °C, verified per absolute maximum ratings table in the G2103 datasheet. This allows operation in high-ambient environments such as enclosed industrial enclosures or under-hood automotive locations when properly heatsinked. Derating curves confirm 8 A continuous current is sustainable up to 100 °C case temperature, with linear reduction above that point. The GPA806 must not exceed 150 °C junction temperature under any condition to maintain reliability and parametric stability.

Does GPA806 have an AEC-Q101 qualified version?

Yes, the GPA806H is the AEC-Q101 qualified variant of GPA806, explicitly listed in the Ordering Information section of the G2103 datasheet. It undergoes additional stress testing-including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing-to meet automotive electronic component reliability requirements. The "H" suffix denotes qualification; standard GPA806 is not AEC-Q101 certified. GPA806H shares identical electrical and thermal specifications with GPA806 but adds automotive-grade process controls and traceability.

What is the forward voltage specification for GPA806 at 8 A and 125 °C?

The GPA806 datasheet specifies forward voltage only at 25 °C (V_F ≤ 1.1 V @ 8 A); no maximum V_F is given at 125 °C. However, typical V_F increases ~2 mV/°C, so at 125 °C junction temperature, expected V_F is approximately 1.3 V. This is confirmed by Fig.4 (Typical Forward Characteristics), which shows V_F ≈ 1.28–1.32 V at 8 A and 125 °C. Designers should use this typical value-not the 25 °C max-for thermal modeling and efficiency calculations at elevated temperatures.

Can GPA806 be used in place of GPA805 or GPA807?

No-GPA806 is not interchangeable with GPA805 (600 V V_RRM) or GPA807 (1000 V V_RRM) without circuit revalidation. While all share identical package, current rating, and thermal specs, their V_RRM values differ by 200 V increments. Substituting GPA806 for GPA807 risks reverse breakdown in 1000 V systems; using GPA806 instead of GPA805 may reduce safety margin in 600 V designs. Voltage rating must match system peak reverse stress; only same-numbered variants (e.g., GPA806 ↔ GPA806H) are direct replacements.

What is the junction-to-case thermal resistance (R_θJC) of GPA806?

The GPA806 has a typical junction-to-case thermal resistance (R_θJC) of 2.5 °C/W, as stated in the Thermal Performance section of the G2103 datasheet. This value is measured under standardized conditions (flat, greased interface to copper block) and applies to the TO-220AC package with cathode tab as thermal path. It enables precise heatsink sizing: for example, at 8 A and 1.1 V V_F, power dissipation is ~8.8 W, requiring ≤11.4 °C/W total system thermal resistance (including heatsink and interface) to hold T_J ≤ 150 °C at 25 °C ambient.