Taiwan Semiconductor Corporation GPA807

Overview

GPA807 from Taiwan Semiconductor is a single-die standard rectifier diode in TO-220AC package, rated for 1000 V repetitive peak reverse voltage (V_RRM), 8 A average forward current (I_F), and 150 A non-repetitive surge current (I_FSM). It delivers low forward voltage drop (≤1.1 V at 8 A, 25°C) and ultra-low reverse leakage (≤5 µA at 25°C), optimized for high-efficiency DC-DC converters and industrial switching inverters.

For engineers reviewing the GPA807 datasheet, GPA807 pinout, GPA807 application, or GPA807 equivalent, key selection criteria include its 1000 V V_RRM, TO-220AC thermal resistance (R_θJC = 2.5 °C/W), AEC-Q101 qualification option (GPA807H), junction temperature range (–55 to +150°C), and glass-passivated chip reliability for harsh-environment power conversion.

Technical Context

The GPA807 operates as a unidirectional silicon rectifier with a single PN junction, designed for line-frequency and high-frequency switching applications up to 1 MHz. Its glass-passivated chip structure ensures stable reverse characteristics and robust surge immunity, while the TO-220AC case provides direct heatsink mounting and 2.5 °C/W junction-to-case thermal resistance.

Electrical behavior is defined by fixed parameters: forward voltage ≤1.1 V at 8 A/25°C, reverse current ≤5 µA at rated 1000 V/25°C (≤100 µA at 125°C), and junction capacitance of 50 pF at 1 MHz/4 V. No control logic, gate drive, or integrated protection circuitry is present - it functions strictly as a passive two-terminal rectifying element.

Key Specifications

Pinout & Package

Package: TO-220AC - three-terminal, single-die, through-hole package with isolated tab (cathode-connected), matte tin-plated leads compliant with J-STD-002 solderability, UL 94V-0 molding compound, and JESD 201 Class 2 whisker resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH8L06W and VS-8EWH06FN-M3, the GPA807 uniquely supports 1000 V systems without derating, maintains competitive V_F and thermal resistance, and offers AEC-Q101 qualification only in the GPA807H variant - making it the sole choice for high-voltage industrial and renewable energy rectification where voltage headroom is non-negotiable.

Availability

GPA807 is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, solar microinverters, and industrial power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for GPA807 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, TVS diodes, and MOSFETs since 1979.

The GPA807 belongs to TSC's GPA-series standard rectifier family, engineered for high-voltage, high-current industrial and automotive power conversion where reliability, surge robustness, and thermal efficiency are prioritized over ultra-fast recovery.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for GPA807?

The GPA807 has a maximum repetitive peak reverse voltage (V_RRM) of 1000 V, as confirmed in the Absolute Maximum Ratings table. This rating applies under specified test conditions (T_A = 25°C) and defines the highest reverse voltage the device can block continuously without breakdown. The GPA807 is the highest-voltage variant in the GPA801–GPA807 series, where "x" in GPA80x directly maps to V_RRM: GPA807 = 1000 V.

Is GPA807 available with AEC-Q101 qualification?

Yes, the AEC-Q101 qualified version of GPA807 is designated GPA807H per the Ordering Information section. The "H" suffix indicates full AEC-Q101 stress testing compliance, including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing. Standard GPA807 is not AEC-Q101 qualified; only GPA807H carries this certification.

What is the forward voltage (V_F) of GPA807 at rated current?

The GPA807 exhibits a maximum forward voltage (V_F) of 1.1 V at 8 A forward current and 25°C junction temperature, as specified in the Electrical Specifications table. This value is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. At higher temperatures (e.g., 125°C), V_F decreases slightly due to semiconductor physics, but the datasheet specifies only the 25°C maximum.

Does GPA807 have a built-in thermal shutdown or protection circuit?

No, GPA807 is a passive two-terminal silicon rectifier diode with no integrated protection circuitry, thermal shutdown, or active control features. It relies entirely on external thermal management (e.g., heatsinking via its TO-220AC tab) and system-level protection (e.g., fusing, current limiting) to prevent junction overheating beyond its +150°C maximum rating.

What is the junction-to-case thermal resistance (R_θJC) of GPA807?

The GPA807 has a typical junction-to-case thermal resistance (R_θJC) of 2.5 °C/W, as published in the Thermal Performance section. This value is measured under standardized conditions with proper mounting pressure and thermal interface material, and it enables accurate calculation of junction temperature rise above case temperature during 8 A operation.