Taiwan Semiconductor Corporation GPAS1007

Overview

GPAS1007 from Taiwan Semiconductor is a 10 A, 1000 V standard surface-mount rectifier diode in TO-263AB (D2PAK) package, featuring glass-passivated junction, 1.10 V max forward voltage at 10 A/25°C, and 150 A surge capability - used in high-voltage DC-DC converters and industrial inverters.

For engineers reviewing the GPAS1007 datasheet, GPAS1007 pinout, GPAS1007 application, or GPAS1007 equivalent, key selection criteria include peak reverse voltage rating (1000 V), thermal resistance (4 °C/W), moisture sensitivity level (J-STD-020 Level 1), RoHS/halogen-free compliance, and TO-263AB mechanical compatibility.

Technical Context

This single-die standard recovery rectifier operates with a maximum junction temperature of 150°C and exhibits low power loss due to its 1.10 V typical forward voltage at rated current. Its glass-passivated chip junction ensures stable performance under humid conditions and repeated thermal cycling.

The device supports high-surge applications with 150 A non-repetitive peak forward current (8.3 ms half-sine), and delivers predictable reverse leakage (<5 µA at 25°C, <100 µA at 125°C) across its full 1000 V V_RRM rating - critical for reliable operation in switching-mode power supplies.

Key Specifications

Pinout & Package

Package: TO-263AB (D2PAK), surface-mount, single-anode/single-cathode configuration with exposed cathode tab for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with STTH10R10DJF and VS-10EWH10-M3, GPAS1007 delivers optimal balance of 1000 V blocking, 1.10 V V_F, 150 A surge rating, and J-STD-020 Level 1 handling - making it ideal for cost-sensitive, high-volume industrial and renewable energy applications where standard recovery suffices.

Availability

GPAS1007 is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, industrial motor drives, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for GPAS1007 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The GPAS1007 belongs to TSC's GPAS series of standard recovery rectifiers - engineered for high-voltage, high-current surface-mount applications where reliability, thermal performance, and manufacturing simplicity are prioritized over ultra-fast switching.

FAQ

What is the maximum junction temperature rating for GPAS1007?

The GPAS1007 has a maximum junction temperature (T_J) of +150°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet. This rating allows operation in demanding thermal environments such as enclosed industrial power supplies or automotive onboard chargers. Derating curves confirm usable current capacity down to 0 A at 150°C case temperature. GPAS1007 must be thermally anchored to maintain this limit under full 10 A load.

Is GPAS1007 RoHS and halogen-free compliant?

Yes, GPAS1007 is fully RoHS compliant and halogen-free per IEC 61249-2-21, as confirmed in the "Features" section of the Taiwan Semiconductor datasheet. The device uses matte tin-plated leads and UL 94V-0 molding compound. These certifications make GPAS1007 suitable for export to EU, China, and other regulated markets. GPAS1007 documentation explicitly states both compliance statements without qualification.

What is the moisture sensitivity level (MSL) of GPAS1007?

GPAS1007 is rated MSL Level 1 per J-STD-020, meaning it can be stored indefinitely at ambient conditions and placed directly into reflow without pre-baking. This eliminates process steps and risk of moisture-induced popcorning during SMT assembly. The Level 1 rating is confirmed in the "Features" list and supported by the TO-263AB package construction. GPAS1007 thus reduces manufacturing complexity versus MSL Level 3 alternatives.

Does GPAS1007 have a specified junction-to-case thermal resistance?

Yes, GPAS1007 specifies a typical junction-to-case thermal resistance (R_θJC) of 4 °C/W, measured under standard test conditions per JEDEC standards. This value is critical for thermal design when mounting the TO-263AB package to a heatsink or large copper area. GPAS1007's low R_θJC enables efficient heat transfer and supports 10 A continuous operation with passive cooling in many applications.

What is the forward voltage (V_F) specification for GPAS1007 at rated current?

GPAS1007 has a maximum forward voltage of 1.10 V at I_F = 10 A and T_J = 25°C, as stated in the "Electrical Specifications" table. This value is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. At elevated junction temperatures, V_F decreases slightly - a characteristic confirmed in the "Typical Forward Characteristics" curve. GPAS1007's V_F directly determines conduction losses in high-current rectification paths.