Taiwan Semiconductor Corporation GPAS1007 MNG

Overview

GPAS1007 MNG from Taiwan Semiconductor is a 16A, 1000V standard rectifier diode in TO-220AB package with dual-die configuration, 150A surge rating, 1.1V max forward voltage at 8A/25°C, and AEC-Q101 qualification. It serves as primary AC/DC input rectifier in high-voltage industrial power supplies.

For engineers reviewing the GPAS1007 MNG datasheet, GPAS1007 MNG pinout, GPAS1007 MNG application, or GPAS1007 MNG equivalent, key selection criteria include VRRM=1000V, IFSM=150A, RθJC=1.5°C/W, TJ(max)=150°C, and AEC-Q101 compliance for automotive-grade reliability validation.

Technical Context

This device implements a dual-die standard recovery rectifier architecture optimized for high-voltage switching-mode power conversion. Its 1000V repetitive peak reverse voltage (VRRM) and 150A non-repetitive surge current (IFSM) support robust operation under transient overvoltage and line surge conditions.

Thermal performance is defined by a junction-to-case thermal resistance of 1.5°C/W and maximum junction temperature of +150°C, enabling stable conduction at full 16A average forward current (IF) when mounted on heatsink with appropriate torque (≤0.56 N·m).

Key Specifications

Pinout & Package

Package: TO-220AB - Insulated case with matte tin-plated leads, UL 94V-0 molding compound, JESD 201 Class 2 whisker resistance, and polarity marking per device top-side marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH1610DJF, GPAS1007 MNG adds AEC-Q101 qualification for automotive use; compared with VS-16EWH10, it trades 0.5°C/W higher RθJC for TO-220AB footprint compatibility and lower assembly cost in space-constrained designs.

Availability

GPAS1007 MNG is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, automotive onboard chargers, and solar microinverters requiring stable component supply with long-term lifecycle visibility.

Supply support for GPAS1007 MNG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, automotive, and consumer markets since 1979.

The GP1601–GP1607 family was designed specifically for high-voltage, high-current rectification in switching power supplies where reliability, surge robustness, and thermal efficiency are critical-targeting applications from telecom rectifiers to EV charging systems.

FAQ

What is the maximum junction temperature rating for GPAS1007 MNG?

The GPAS1007 MNG has a maximum junction temperature (TJ(max)) of +150°C, verified per absolute maximum ratings table. This allows operation in high-ambient environments such as automotive under-hood locations or enclosed industrial enclosures. Derating begins at case temperatures above 25°C per the forward current derating curve in the datasheet. Thermal design must ensure that actual junction temperature remains below this limit under worst-case load and ambient conditions. GPAS1007 MNG's RθJC of 1.5°C/W supports accurate thermal modeling when heatsink interface resistance is known.

Is GPAS1007 MNG AEC-Q101 qualified?

Yes, GPAS1007 MNG is AEC-Q101 qualified, as confirmed by its "H" suffix in the ordering code (GP1607H) and explicit listing in the features section. This qualification covers stress tests including temperature cycling, high-temperature operating life, and mechanical shock, validating suitability for automotive power electronics. The qualification applies specifically to GPAS1007 MNG and not to non-H variants in the GP1601–GP1607 series. GPAS1007 MNG meets all requirements for Grade 1 (−40°C to +125°C ambient) and Grade 0 (−40°C to +150°C ambient) applications.

What is the forward voltage specification for GPAS1007 MNG at rated current?

The GPAS1007 MNG has a maximum forward voltage (VF) of 1.1 V at IF = 8 A and TJ = 25°C, per electrical specifications table. This value is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. At full 16A average current, VF increases due to thermal rise and is governed by the typical forward characteristics curve. GPAS1007 MNG's low VF contributes to reduced conduction losses versus older rectifier families, especially in high-duty-cycle applications like PFC boost stages.

Does GPAS1007 MNG have dual-die construction, and how does it affect performance?

Yes, GPAS1007 MNG uses dual-die construction inside a single TO-220AB package, as stated in the key parameters table. This configuration allows two independent rectifier dies to share the 16A average forward current load, reducing current density per die and improving thermal distribution. It also enables higher surge current capability (150A IFSM) without increasing package size. GPAS1007 MNG's dual-die layout maintains electrical equivalence to a single 16A die but enhances reliability under transient overload conditions common in motor drives and renewable energy inverters.

What is the thermal resistance from junction to case for GPAS1007 MNG?

The junction-to-case thermal resistance (RθJC) for GPAS1007 MNG is 1.5°C/W, specified in the thermal performance table. This value is measured under standardized test conditions with proper mounting torque (≤0.56 N·m) and thermal interface material. It enables calculation of junction temperature rise above heatsink temperature: ΔTJ = RθJC × PD. GPAS1007 MNG's 1.5°C/W RθJC supports ≥10W continuous power dissipation with ≤15°C temperature rise, making it suitable for thermally constrained layouts where TO-247 alternatives would require more board area.