Vishay General Semiconductor - Diodes Division GSOT08C-HG3-18
- Part No.:
- GSOT08C-HG3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
GSOT08C-HG3-18.pdf
- Description:
- TVS DIODE 8VWM 19.2VC SOT23
- Quantity:
- Payment:

- Shipping:

Inventory:2,551
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
GSOT08C-HG3-18 from Vishay Semiconductors is a two-line bidirectional asymmetrical ESD protection diode in SOT-23 package, rated for 8 V reverse stand-off voltage, ±30 kV IEC 61000-4-2 ESD immunity, and 18 A peak pulse current (8/20 μs), used to safeguard high-speed data lines such as USB 2.0 or RS-485 interfaces against transient overvoltage events.
For engineers reviewing the GSOT08C-HG3-18 datasheet, GSOT08C-HG3-18 pinout, GSOT08C-HG3-18 application, or GSOT08C-HG3-18 equivalent, key selection criteria include clamping voltage at 18 A (≤19.2 V), low 160–250 pF capacitance at 0 V bias, AEC-Q101 qualification status, and BiAs-mode dual-line protection architecture with grounded common terminal.
Technical Context
The GSOT08C-HG3-18 implements BiAs-MODE (Bidirectional Asymmetrical) protection: pins 1 and 2 connect to protected signal lines, pin 3 to ground, enabling independent clamping of positive transients (via reverse-biased diodes) and negative transients (via forward-biased diodes) with distinct VC levels - 15.2 V (max) at 18 A for reverse, 3.0 V (max) at 18 A for forward.
It supports dual configuration modes: two-line asymmetrical (BiAs) with pin 3 grounded, or single-line symmetrical (BiSy) with pin 3 unconnected and pins 1/2 forming a bipolar path - delivering 8.5 V VRWM and 18.5 V VC (max) at 18 A in that mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Device Type | Two-line bidirectional asymmetrical ESD protection diode (TVS array) |
| Reverse Stand-off Voltage (VRWM) | 8 V - maximum continuous operating voltage before conduction begins on either line |
| Peak Pulse Current (IPPM) | 18 A (8/20 μs) - surge handling capacity per protection path in BiAs mode |
| Clamping Voltage (VC) | ≤19.2 V at 18 A (reverse), ≤3.0 V at 18 A (forward) - limits transient voltage seen by downstream ICs |
| ESD Immunity | ±30 kV contact / ±30 kV air (IEC 61000-4-2) - meets industrial and automotive ESD robustness requirements |
| Capacitance (CD) | 160–250 pF at 0 V, 80 pF at 4 V (1 MHz) - compatible with USB 2.0 (≤200 pF typical limit) |
| AEC-Q101 Qualified | Yes - validated for automotive under-hood and infotainment applications requiring reliability across -55 °C to +150 °C |
Pinout & Package
SOT-23 package (JEDEC TO-236AB), 3-pin surface-mount, 2.8 × 2.35 × 1.15 mm body, e3 Sn plating, MSL level 1, peak reflow ≤260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Line 1 anode / cathode | Connects to first protected signal line (L1); forms one half of BiAs protection path to ground (pin 3) |
| Pin 2 | Line 2 anode / cathode | Connects to second protected signal line (L2); forms second half of BiAs protection path to ground (pin 3) |
| Pin 3 | Ground reference | Must be connected to system ground to enable two-line asymmetrical (BiAs) operation; left floating for BiSy single-line mode |
Key Features
| Feature | Design Value |
|---|---|
| BiAs-MODE dual-line protection | Enables simultaneous safeguarding of two independent data lines (e.g., D+ and D−) with shared ground return, minimizing board space vs. discrete diodes |
| Low clamping voltage asymmetry | Forward clamping ≤3.0 V at 18 A ensures minimal disruption to logic-low states during negative ESD events |
| Automotive-grade qualification | AEC-Q101 qualified - validated for temperature cycling, humidity, mechanical shock, and ESD stress per automotive reliability standards |
| Green RoHS-compliant packaging | HG3 suffix indicates lead-free, halogen-free, green-compliant SOT-23 with Sn plating and UL 94 V-0 molding compound |
| Configurable protection topology | Supports both BiAs (two-line, pin 3 grounded) and BiSy (single-line, pin 3 open) modes without component change - simplifies design reuse |
Applications
| USB 2.0 Interface Protection | Automotive Infotainment Data Lines |
|---|---|
Use Scenario: Protecting D+ and D− differential pair in USB 2.0 ports against ESD events during hot-plug or handling. IC Role / Device Role / Timing Role: Two-line asymmetrical TVS array clamping transients before they reach the USB transceiver IC. Use Value: 160–250 pF capacitance avoids signal integrity degradation; ±30 kV ESD rating exceeds IEC 61000-4-2 Level 4 requirement. | Use Scenario: Safeguarding CAN FD or LIN bus signal pairs in head unit or display modules exposed to vehicle-level ESD. IC Role / Device Role / Timing Role: Ground-referenced dual-path ESD suppressor placed at connector entry point. Use Value: AEC-Q101 qualification ensures operation across -55 °C to +150 °C junction range; 8 V VRWM matches 5 V or 3.3 V bus voltage margins. |
| Industrial RS-485 Transceiver Port | Consumer Audio Line-In/Out Jacks |
Use Scenario: Protecting A/B differential lines of RS-485 transceivers in factory automation controllers subject to cable discharge events. IC Role / Device Role / Timing Role: Bidirectional asymmetrical clamp limiting voltage excursion on both lines relative to local ground. Use Value: 15.2 V max clamping at 18 A prevents latch-up in 3.3 V or 5 V transceivers; SOT-23 footprint enables compact layout near connectors. | Use Scenario: Shielding analog audio input/output jacks (e.g., 3.5 mm TRS) in smart speakers or docking stations from user-handling ESD. IC Role / Device Role / Timing Role: Low-capacitance dual-line protector preserving audio bandwidth while suppressing ±30 kV contact discharges. Use Value: 80 pF capacitance at 4 V bias minimizes high-frequency attenuation; 8 V VRWM accommodates typical ±2 V audio swing with margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VGSOT08C-HG3-18 | Direct successor family; identical SOT-23 pinout, same VRWM (8 V), improved leakage (<1 μA vs. 5 μA), lower capacitance (140 pF typ. vs. 160–250 pF) | End-of-life replacement with enhanced performance; requires no PCB change but offers tighter parametric control | Select when upgrading legacy designs or prioritizing lowest possible leakage and capacitance |
| SMF08CTHE3_A/H | Single-line 8 V TVS (SMA package); not pin-compatible; higher 200 pF capacitance; no BiAs dual-line capability | Limited to single-signal protection; unsuitable for differential pair applications without duplication | Use only for single-line protection where space allows SMA footprint and dual-line functionality is unnecessary |
Compared with VGSOT08C-HG3-18, the GSOT08C-HG3-18 offers proven field reliability and broader design documentation, while SMF08CTHE3_A/H lacks dual-line integration and increases board area - making GSOT08C-HG3-18 optimal for space-constrained differential interface protection.
Availability
GSOT08C-HG3-18 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, automotive infotainment data lines, and industrial RS-485 transceiver ports requiring stable component supply through its January 2025 end-of-life date.
Supply support for GSOT08C-HG3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in power management, sensing, and circuit protection components with emphasis on reliability and automotive-grade validation.
The GSOTxxC series was developed specifically for high-density, dual-line ESD protection in space-constrained consumer, industrial, and automotive electronics - emphasizing low capacitance, asymmetrical clamping, and AEC-Q101 compliance.
FAQ
What is the maximum operating temperature range for the GSOT08C-HG3-18?
The GSOT08C-HG3-18 has a specified junction temperature range of -55 °C to +150 °C and storage temperature range of -55 °C to +150 °C, fully supporting automotive under-hood and industrial environments where thermal extremes occur. This rating is verified per AEC-Q101 stress testing protocols and applies to the GSOT08C-HG3-18 in both BiAs and BiSy configurations.
Can the GSOT08C-HG3-18 be used for single-line protection, and how does its performance differ?
Yes, the GSOT08C-HG3-18 supports BiSy-MODE single-line protection when pin 3 is left unconnected and pins 1 and 2 form a bipolar path. In this mode, it delivers 8.5 V VRWM and 18.5 V max clamping voltage at 18 A - slightly higher VRWM and VC than BiAs mode due to series diode conduction. The GSOT08C-HG3-18 remains effective for single-ended signals like UART or GPIO, though dual-line use maximizes its architectural advantage.
What does the "HG3" suffix indicate in GSOT08C-HG3-18?
The "HG3" suffix in GSOT08C-HG3-18 denotes a green, halogen-free, lead-free (Pb-free) SOT-23 package with matte tin (Sn) plating (e3), compliant with RoHS Directive 2011/65/EU and Vishay's environmental policy. It confirms UL 94 V-0 flammability rating, MSL level 1 moisture sensitivity, and compatibility with standard SnPb and lead-free reflow profiles up to 260 °C peak.
How does the GSOT08C-HG3-18 achieve ±30 kV ESD immunity while maintaining low capacitance?
The GSOT08C-HG3-18 achieves ±30 kV IEC 61000-4-2 immunity through optimized silicon junction design and precise doping profiles that enable rapid avalanche breakdown without parasitic oscillation, while its low 160–250 pF capacitance stems from minimized junction area and controlled depletion region geometry. These characteristics are measured and guaranteed for the GSOT08C-HG3-18 under standardized test conditions and documented in Vishay's official characterization reports.
Is the GSOT08C-HG3-18 pin-compatible with other devices in the GSOTxxC family?
Yes, all GSOTxxC devices including the GSOT08C-HG3-18 share identical SOT-23 pinout (pin 1 = L1, pin 2 = L2, pin 3 = GND), allowing direct substitution across the family (e.g., GSOT05C, GSOT12C) when adjusting VRWM and surge ratings. This uniformity enables scalable ESD protection design - the GSOT08C-HG3-18 can replace GSOT05C-HG3-18 or GSOT12C-HG3-18 on the same PCB footprint without layout changes.
GSOT08C-HG3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V (Max)
- Voltage - Breakdown (Min):
- 9V
- Voltage - Clamping (Max) @ Ipp:
- 19.2V
- Current - Peak Pulse (10/1000µs):
- 18A (8/20µs)
- Power - Peak Pulse:
- 345W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 160pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
GSOT08C-HG3-18 FAQ
1.How can I place an order for GSOT08C-HG3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for GSOT08C-HG3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for GSOT08C-HG3-18 reliable?
The price and inventory of GSOT08C-HG3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GSOT08C-HG3-18 is usually 5 days.
3.What payment methods are accepted for GSOT08C-HG3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GSOT08C-HG3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for GSOT08C-HG3-18?
GSOT08C-HG3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your GSOT08C-HG3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for GSOT08C-HG3-18?
For technical support, including GSOT08C-HG3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GSOT08C-HG3-18 requirements.
6.How does Aetrix verify that GSOT08C-HG3-18 is sourced from the original manufacturer or authorized distributors?
All GSOT08C-HG3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GSOT08C-HG3-18 meets industry standards.
7.What is the process for return or replacement of GSOT08C-HG3-18?
All GSOT08C-HG3-18 units undergo pre-shipment inspection (PSI). If there is an issue with GSOT08C-HG3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The GSOT08C-HG3-18 part is unused and in its original packaging.
Return procedure for GSOT08C-HG3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
GSOT08C-HG3-18 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

