Diodes Incorporated HBDM60V600W-7

Overview

HBDM60V600W from Diodes Incorporated is a dual-transistor half-bridge driver array in SOT-363, integrating one PNP (MMBT2907A) and one NPN (MMBTA06) transistor for bipolar motor/actuator control. It supports ±60 V collector-base voltage, ±600 mA PNP and 500 mA NPN continuous collector current, and operates from –55 °C to +150 °C junction temperature - used in bidirectional DC motor drivers with discrete gate control.

For engineers reviewing the HBDM60V600W datasheet, HBDM60V600W pinout, HBDM60V600W application, or HBDM60V600W equivalent, key selection criteria include complementary PNP/NPN pairing, SOT-363 thermal performance (625 °C/W R_θJA), V_CE(SAT) ≤ 0.5 V at high current, and RoHS-compliant "Green" packaging for industrial motion control designs.

Technical Context

This device implements a monolithic dual-transistor half-bridge topology where Q1 (MMBT2907A PNP) serves as the high-side switch and Q2 (MMBTA06 NPN) as the low-side switch - enabling bidirectional current flow through inductive loads without external cross-conduction protection logic. Its epitaxial planar die construction ensures stable gain and switching characteristics across temperature.

Each transistor is electrically isolated within the same package but shares no internal biasing or level-shifting circuitry; drive signals must be independently sourced and timed to prevent shoot-through. The 200 mW total power dissipation rating assumes FR-4 PCB mounting per AP02001 layout guidelines.

Key Specifications

Pinout & Package

SOT-363 package with 6 terminals: dual three-terminal transistors sharing common emitter connections (pins 3 & 4) and separate base/collector leads. Molded plastic case meets UL 94V-0 flammability rating and J-STD-020D Level 1 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bipolar transistor half-bridge applications.

Compared with ZXTDA1024Z and ULN2003A, HBDM60V600W provides unmatched discrete control freedom for custom H-bridge timing, lower saturation loss than Darlington alternatives, and verified bipolar voltage ratings ideal for 24 V industrial motion systems.

Availability

HBDM60V600W is available at Aetrix Electronics and suitable for DC motor direction control, linear actuator drivers, relay interface modules, and small-scale test equipment requiring stable component supply and long-term industrial availability.

Supply support for HBDM60V600W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The HBDM60V600W belongs to Diodes' high-reliability discrete transistor array product line, engineered specifically for compact, thermally efficient bipolar switching in industrial motion control and actuation systems.

FAQ

What is the maximum safe operating voltage for HBDM60V600W in half-bridge configuration?

The device supports V_CBO = –60 V (Q1) and 80 V (Q2), allowing use in 24 V nominal systems with ≥2× voltage margin for inductive flyback. When configured as a half-bridge, the maximum differential voltage across CQ1–CQ2 is limited to 60 V due to Q1's rating - exceeding this risks avalanche breakdown in the PNP transistor.

Can HBDM60V600W drive a 12 V DC motor directly without external current limiting?

Yes - its Q1 supports –600 mA and Q2 supports 500 mA continuous collector current, sufficient for typical 12 V brushed motors drawing <500 mA under load. However, peak startup current may exceed ratings; external series resistance or PWM current limiting is recommended for stall protection.

Is pin 3 (EQ1) electrically connected to pin 4 (EQ2) internally?

Yes - pins 3 and 4 are bonded together internally as a single common emitter node for both transistors. This dual-pin layout provides mechanical stability and current-sharing capability; both must be soldered to the same PCB net, typically the motor load center point or ground reference.

Does HBDM60V600W require external flyback diodes when driving inductive loads?

Yes - the device contains no integrated flyback diodes. External Schottky diodes (e.g., MMBD4448) must be placed from CQ1 to EQ1 and from CQ2 to EQ2 to clamp inductive kickback and prevent transistor damage during turn-off.