Taiwan Semiconductor Corporation HDBLS106G

Overview

HDBLS106G from Taiwan Semiconductor is a 1 A, 800 V repetitive peak reverse voltage (VRRM) quad-configuration bridge rectifier in DBLS package, featuring 1.7 V max forward voltage at 1 A and 75 ns reverse recovery time, designed for high-efficiency AC/DC conversion in compact power adapters and lighting drivers.

For engineers reviewing the HDBLS106G datasheet, HDBLS106G pinout, HDBLS106G application, or HDBLS106G equivalent, key selection criteria include its 800 V VRRM rating, 50 A IFSM surge capability, 15 °C/W junction-to-lead thermal resistance, AEC-Q101 qualification option (H-suffix), and DBLS surface-mount footprint compatibility with automated assembly.

Technical Context

The HDBLS106G integrates four silicon diodes in a single-phase full-wave bridge configuration optimized for high-voltage switching-mode power supplies. Its 800 V VRRM and 1.7 V VF (max) at 1 A reflect trade-offs between blocking capability and conduction loss in mid-to-high voltage applications.

Thermal performance is defined by R_θJL = 15 °C/W and R_θJA = 40 °C/W, enabling reliable operation up to 150 °C junction temperature. Reverse recovery time of 75 ns supports efficient operation at typical SMPS frequencies without excessive switching loss.

Key Specifications

Pinout & Package

Package: DBLS - surface-mount, molded plastic case with matte tin-plated leads, UL 94V-0 rated, 0.360 g weight, polarity marked on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with GBU8K and MB10F, the HDBLS106G offers superior high-frequency efficiency due to its 75 ns trr and compact DBLS footprint, while maintaining identical 800 V VRRM and 1 A rating-making it optimal for space-constrained, medium-voltage SMPS where thermal and EMI performance are prioritized.

Availability

HDBLS106G is available at Aetrix Electronics and suitable for switching mode power supplies, LED lighting drivers, and industrial control power supplies requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HDBLS106G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, including rectifiers, TVS diodes, and MOSFETs, with global distribution and AEC-Q101 qualification capability.

The HDBLS106G belongs to TSC's DBLS-series high-efficiency bridge rectifier product line, engineered for cost-sensitive, high-volume AC/DC power conversion in consumer, industrial, and lighting applications where reliability, thermal performance, and SMT compatibility are essential.

FAQ

What is the maximum repetitive peak reverse voltage (VRRM) for HDBLS106G?

The HDBLS106G has a VRRM rating of 800 V, meaning it can safely block up to 800 V of repetitive reverse voltage across each internal diode. This value is confirmed in the Absolute Maximum Ratings table and corresponds to the "106" in the part number (106 → 800 V). The HDBLS106G is therefore suitable for universal-input (90–264 V AC) and 277 V AC lighting applications with adequate safety margin.

Does HDBLS106G have AEC-Q101 qualification?

The base HDBLS106G is not AEC-Q101 qualified; however, the variant HDBLS106GH is explicitly listed in the Ordering Information as AEC-Q101 qualified. This distinction is indicated by the "H" suffix. Engineers requiring automotive-grade reliability must specify HDBLS106GH and verify qualification status via Taiwan Semiconductor's official documentation and lot traceability.

What is the forward voltage (VF) specification for HDBLS106G at rated current?

The HDBLS106G has a maximum forward voltage of 1.7 V per diode at IF = 1 A and TJ = 25°C, as specified in the Electrical Specifications table. Since a bridge conducts through two diodes in series during each half-cycle, the total forward drop is up to 3.4 V under those conditions-critical for calculating conduction losses and thermal design in the HDBLS106G application.

What package type does HDBLS106G use, and what are its mounting characteristics?

The HDBLS106G uses the DBLS surface-mount package: a compact, molded plastic case with matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance. Its footprint matches standard DBLS land patterns, supports reflow soldering without baking (MSL Level 1), and weighs approximately 0.360 g-enabling high-density, automated assembly in space-constrained HDBLS106G designs.

How does the reverse recovery time (trr) of HDBLS106G compare to lower-voltage variants in the same family?

The HDBLS106G has a trr of 75 ns, matching HDBLS105G and HDBLS107G, and is higher than the 50 ns of HDBLS101G–HDBLS104G. This reflects the silicon process trade-off: higher-voltage diodes in the HDBLS106G family use slower, more robust junctions to sustain 800 V blocking, making it less suitable for >200 kHz operation than lower-VRRM variants-but still appropriate for standard 65–130 kHz SMPS designs.