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Taiwan Semiconductor Corporation HER1001G
- Part No.:
- HER1001G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-220-3
- Datasheet:
-
HER1001G.pdf
- Description:
- DIODE ARRAY GP 50V 10A TO-220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,966
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Product details
Overview
HER1001G from Taiwan Semiconductor is a 10A, 50V high-efficiency ultrafast recovery rectifier diode in TO-220AB package with dual-die configuration, 1.0V typical forward voltage at 5A/25°C, 50ns reverse recovery time, and 125A surge rating - deployed in DC-DC converters and switching-mode power supplies.
For engineers reviewing the HER1001G datasheet, HER1001G pinout, HER1001G application, or HER1001G equivalent, key selection criteria include repetitive peak reverse voltage (50V), thermal resistance (1.5°C/W), junction temperature range (–55°C to +150°C), and AEC-Q101 qualification availability for automotive-grade variants.
Technical Context
This device is a single-phase, dual-die, ultrafast recovery rectifier optimized for high-frequency switching applications. It delivers low conduction loss via 1.0V VF (typ) at 5A and fast switching via 50ns trr, enabling efficient operation in SMPS topologies where reverse recovery behavior directly impacts EMI and efficiency.
The TO-220AB package provides mechanical robustness and thermal performance (RθJC = 1.5°C/W), supporting direct heatsink mounting. Its polarity marking and matte tin-plated leads comply with J-STD-002 solderability and JESD201 Class 2 whisker requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 50 V - Maximum repetitive reverse blocking voltage; defines safe operating limit in flyback/freewheeling paths |
| IF | 10 A - Continuous forward current rating; determines steady-state power handling without derating |
| IFSM | 125 A - Non-repetitive surge current (8.3ms half-sine); supports inrush and transient overload tolerance |
| trr | 50 ns - Reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A; critical for minimizing switching loss in >100kHz converters |
| VF (typ) | 1.0 V @ 5A, 25°C - Low forward voltage drop reduces conduction loss and improves system efficiency |
| RθJC | 1.5 °C/W - Junction-to-case thermal resistance; enables predictable thermal design with heatsink interface |
| TJ max | +150 °C - Maximum junction temperature; sets upper boundary for thermal margin in enclosed environments |
Pinout & Package
Package: TO-220AB - Insulated case with center tab (cathode), two outer leads (anode and cathode), matte tin-plated terminals, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Center Tab | Cathode (K) | Electrically connected to cathode; used for heatsink mounting and thermal path; must be isolated if floating ground required |
| Lead 1 (Left) | Anode (A) | Primary anode connection; carries full forward current into device during conduction phase |
| Lead 2 (Right) | Cathode (K) | Secondary cathode terminal; provides low-inductance return path and supports dual-terminal layout flexibility |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast recovery (trr ≤ 50 ns) | Enables high-frequency switching (>200 kHz) with minimal reverse recovery loss and reduced EMI generation |
| Low VF (1.0 V typ @ 5A) | Reduces conduction losses by ~15% vs. standard FRDs, improving efficiency in 12V/24V DC-DC stages |
| Dual-die configuration | Provides redundancy and improved thermal distribution across TO-220AB footprint; enhances reliability under cyclic stress |
| AEC-Q101 qualified option (HER1001GH) | Validated for automotive under-hood applications including engine control modules and ADAS power supplies |
| RoHS & halogen-free | Complies with IEC 61249-2-21; supports environmentally regulated industrial and consumer end-equipment |
Applications
| DC-DC Converters | Switching Inverters |
|---|---|
Use Scenario: Secondary-side synchronous rectification in isolated 48V-to-12V telecom buck-boost converters. IC Role / Device Role / Timing Role: Ultrafast rectifier replacing Schottky diodes where higher reverse voltage margin is required. Use Value: 50V VRRM and 50ns trr enable stable operation at 300kHz with <1.2W conduction loss at 10A output. | Use Scenario: Freewheeling path in three-phase motor drive inverters with 600V bus. IC Role / Device Role / Timing Role: Clamp diode absorbing inductive kickback during IGBT turn-off. Use Value: 125A IFSM withstands repeated 100A surge events; 1.5°C/W RθJC maintains TJ < 130°C at 75°C ambient. |
| Freewheeling Diodes | Industrial SMPS |
Use Scenario: Inductor current recirculation in high-current buck regulators powering FPGA core rails. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode ensuring minimal voltage overshoot during switch node transitions. Use Value: 50ns trr limits reverse recovery charge (Qrr) to <15nC, reducing voltage spikes and snubber sizing. | Use Scenario: Output rectification in 500W open-frame industrial AC-DC power supplies. IC Role / Device Role / Timing Role: Primary output rectifier handling continuous 10A load with forced-air cooling. Use Value: Dual-die TO-220AB construction sustains 10A at 85°C ambient with <1.8W total dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-10EWH05-M3 | 50V VRRM, 10A IF, 1.1V VF (max), 35ns trr, TO-220AC package (single leadframe) | Lower trr improves high-frequency efficiency but lacks dual-die thermal redundancy | Preferred where fastest switching dominates over thermal margin; not AEC-Q101 qualified |
| ON Semiconductor MUR1050CT | 50V VRRM, 10A IF per diode, 1.7V VF (max), 60ns trr, TO-220AB dual common-cathode | Higher VF increases conduction loss; same package footprint and pinout | Suitable for cost-sensitive industrial designs where 0.7V VF penalty is acceptable |
Compared with VS-10EWH05-M3 and MUR1050CT, HER1001G offers the best balance of low VF (1.0V typ), ultrafast trr (50ns), and dual-die thermal resilience in TO-220AB - making it optimal for thermally constrained, high-reliability 50V rectification where both efficiency and ruggedness matter.
Availability
HER1001G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for HER1001G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.
The HER series was designed specifically for high-efficiency, high-reliability rectification in modern switching power supplies - emphasizing ultrafast recovery, low VF, and robust thermal packaging for demanding 50–1000V applications.
FAQ
What is the maximum junction temperature rating for HER1001G?
The HER1001G has a maximum junction temperature (TJ max) of +150°C, verified per absolute maximum ratings in the official TSC datasheet Version I2104. This rating allows reliable operation in enclosed industrial enclosures with ambient temperatures up to 85°C when paired with appropriate heatsinking. Thermal design must respect the 1.5°C/W junction-to-case resistance to avoid exceeding TJ max during 10A continuous operation.
Is HER1001G pin-compatible with other HER10xxG devices?
No - while all HER10xxG devices share the TO-220AB package and dual-die configuration, HER1001G is rated for 50V VRRM and optimized for trr ≤ 50ns, whereas higher-voltage variants (e.g., HER1005G) exhibit higher VF and longer trr. Pinout is identical, but electrical substitution requires validation of reverse voltage, recovery time, and thermal constraints in the target circuit.
Does HER1001G have AEC-Q101 qualification?
The base HER1001G is not AEC-Q101 qualified; however, the variant HER1001GH (ordering code with "H" suffix) is fully AEC-Q101 qualified per Version I2104 documentation. HER1001GH undergoes additional stress testing for automotive under-hood use and shares identical electrical specs and TO-220AB packaging with HER1001G.
What is the typical forward voltage of HER1001G at 10A?
The datasheet specifies VF only at IF = 5A (1.0V typ, 1.3V max). At 10A, extrapolation using the typical forward characteristic curve (Fig.4) shows VF ≈ 1.15V at 25°C and ≈ 1.25V at 125°C. This value is confirmed by the device's exponential I-V relationship and thermal coefficient - no guaranteed max is published at 10A, so design margins should assume ≤1.35V.
How does the dual-die structure of HER1001G improve reliability?
The dual-die configuration in HER1001G distributes current and thermal stress across two parallel silicon dies within one TO-220AB package. This reduces localized heating, lowers effective junction temperature rise per die, and provides inherent redundancy - improving mean time to failure (MTTF) in high-cycle applications like motor drives and server PSUs where thermal cycling is severe.
HER1001G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 50 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
HER1001G FAQ
1.How can I place an order for HER1001G through Aetrix?
Please submit a Request for Quotation (RFQ) for HER1001G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HER1001G reliable?
The price and inventory of HER1001G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HER1001G is usually 5 days.
3.What payment methods are accepted for HER1001G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HER1001G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HER1001G?
HER1001G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HER1001G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HER1001G?
For technical support, including HER1001G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HER1001G requirements.
6.How does Aetrix verify that HER1001G is sourced from the original manufacturer or authorized distributors?
All HER1001G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HER1001G meets industry standards.
7.What is the process for return or replacement of HER1001G?
All HER1001G units undergo pre-shipment inspection (PSI). If there is an issue with HER1001G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HER1001G part is unused and in its original packaging.
Return procedure for HER1001G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HER1001G Tags
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MMBD1503-TP
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