Taiwan Semiconductor Corporation HER1002G

Overview

HER1002G from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified dual-die ultrafast recovery rectifier in TO-220AB package, rated for 10 A average forward current, 100 V repetitive peak reverse voltage, and 125 A surge current. It delivers low forward voltage (1.0 V at 5 A, 25°C), 50 ns reverse recovery time, and operates up to 150°C junction temperature - ideal for switching-mode DC/DC converters requiring fast, low-loss freewheeling.

For engineers reviewing the HER1002G datasheet, HER1002G pinout, HER1002G application, or HER1002G equivalent, key selection criteria include its 100 V V_RRM, dual-die configuration, TO-220AB thermal performance (R_θJC = 1.5 °C/W), and AEC-Q101 qualification status for automotive-grade reliability validation.

Technical Context

The HER1002G integrates two independent silicon rectifier dies in a single TO-220AB package with common cathode configuration, enabling dual-channel operation without external paralleling. Its ultrafast recovery (t_rr ≤ 50 ns) minimizes switching losses in high-frequency converters operating up to several hundred kHz.

Thermally optimized for bolt-down heatsink mounting (max torque 0.56 N·m), it sustains 10 A continuous conduction while maintaining TJ ≤ 150°C under R_θJC-limited conditions. The device exhibits low junction capacitance (60 pF at 4 V, 1 MHz) and stable reverse leakage (<10 µA at 25°C, <400 µA at 125°C).

Key Specifications

Pinout & Package

Package: TO-220AB, 3-terminal molded plastic case with matte tin-plated leads, UL 94V-0 rated compound, polarity marked on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH10R06DJF and MUR1020CT, the HER1002G uniquely combines 100 V rating, 50 ns t_rr, dual-die common-cathode topology, and AEC-Q101 availability - making it optimal for space-constrained, automotive-qualified 100 V rectification where channel integration and reliability are prioritized over extended voltage headroom.

Availability

HER1002G is available at Aetrix Electronics and suitable for DC/DC converters, switching inverters, and automotive power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for HER1002G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, automotive, and consumer markets since 1979.

The HER100xG series targets high-efficiency, high-reliability rectification in compact power conversion systems - designed specifically for automotive-grade SMPS, renewable energy inverters, and industrial motor controls demanding low loss and robust surge tolerance.

FAQ

What is the maximum junction temperature rating for HER1002G?

The HER1002G has a maximum junction temperature (T_J) of +150°C, with a storage temperature range of −55°C to +150°C. This rating enables reliable operation in under-hood automotive environments and high-ambient industrial enclosures. Thermal design must maintain T_J ≤ 150°C using the specified R_θJC = 1.5 °C/W and appropriate heatsinking. HER1002G derating curves confirm 10 A operation is sustainable up to 75°C case temperature.

Is HER1002G pin-compatible with other devices in the HER100xG family?

Yes - all HER100xG devices share identical TO-220AB package dimensions, pinout (anode-anode-cathode tab), and mechanical mounting interface. Voltage ratings differ across the family (e.g., HER1001G = 50 V, HER1002G = 100 V), but electrical substitution requires verification of V_RRM, V_F, and t_rr suitability for the target circuit. HER1002G itself is not a drop-in replacement for higher-voltage variants without confirming reverse stress margins.

Does HER1002G have AEC-Q101 qualification?

The standard HER1002G is not AEC-Q101 qualified; however, the HER1002GH variant - indicated by the "H" suffix in the ordering code - is fully AEC-Q101 qualified per Rev. I2104. This qualification covers stress testing for temperature cycling, humidity bias, mechanical shock, and high-temperature operating life. Engineers specifying HER1002G for automotive applications must select HER1002GH to meet OEM reliability requirements.

What is the reverse recovery time (t_rr) specification for HER1002G?

The HER1002G has a maximum reverse recovery time (t_rr) of 50 ns, measured at I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A. This ultrafast recovery enables efficient operation in high-frequency switching converters (>200 kHz) and reduces switching losses compared to standard fast recovery diodes. The value is confirmed across the HER1001G–HER1005G subgroup, distinguishing it from the slower HER1006G–HER1008G series (t_rr ≤ 80 ns).

How is the dual-die configuration implemented in HER1002G?

The HER1002G integrates two independent silicon rectifier dies within a single TO-220AB package, sharing only the metal tab as a common cathode terminal. Leads 1 and 2 serve as separate anodes, allowing independent connection of each diode - useful for dual-output supplies, interleaved rectification, or redundancy. This configuration eliminates board-level paralleling and reduces parasitic inductance versus discrete solutions. HER1002G's marking and datasheet explicitly define this dual-anode, common-cathode topology.