Taiwan Semiconductor Corporation HER1003G

Overview

HER1003G from Taiwan Semiconductor is a high-efficiency, 10 A, 200 V repetitive peak reverse voltage (V_RRM) ultra-fast recovery rectifier in TO-220AB package, featuring 50 ns reverse recovery time (t_rr), 1.0 V forward voltage at 5 A, and dual-die configuration for enhanced thermal performance - used in switching-mode DC/DC converters and freewheeling paths.

For engineers reviewing the HER1003G datasheet, HER1003G pinout, HER1003G application, or HER1003G equivalent, key selection criteria include its 200 V V_RRM, 50 ns t_rr, 1.0 V V_F @ 5 A, TO-220AB thermal resistance of 1.5 °C/W, and AEC-Q101 qualification availability (HER1003GH variant).

Technical Context

The HER1003G implements an ultra-fast recovery silicon PN junction structure optimized for high-frequency switching applications, with t_rr = 50 ns under IF = 0.5 A / IR = 1.0 A / I_rr = 0.25 A conditions and low stored charge enabling reduced switching losses. Its dual-die construction improves current sharing and thermal distribution across the TO-220AB case.

It operates over -55 °C to +150 °C junction temperature range, supports 125 A non-repetitive surge current (I_FSM), and maintains ≤10 µA reverse leakage (I_R) at 25 °C and rated V_R, making it suitable for compact, high-efficiency power stages where fast turn-off and low conduction loss are critical.

Key Specifications

Pinout & Package

Package: TO-220AB - Insulated case with center tab (cathode), two outer leads (anode), matte tin-plated terminals compliant with J-STD-002 solderability, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH10R06DJF and MUR1020CT, the HER1003G offers lower V_F and native dual-anode flexibility in TO-220AB, enabling direct replacement in freewheeling and interleaved rectifier layouts without rework - while maintaining identical 200 V rating and 50 ns speed.

Availability

HER1003G is available at Aetrix Electronics and suitable for DC/DC converter output rectification, switching-mode power supply freewheeling, and industrial motor drive snubber applications requiring stable component supply and long-term manufacturability.

Supply support for HER1003G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The HER100xG series was designed specifically for high-frequency, high-efficiency AC/DC and DC/DC power conversion, targeting applications demanding low V_F, fast t_rr, and rugged thermal performance in standard through-hole packages.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) of the HER1003G?

The HER1003G has a V_RRM of 200 V, confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version I2104). This rating defines the highest reverse voltage the device can block repeatedly without breakdown and is strictly specific to the HER1003G - not shared across the entire HER1001G–HER1008G family. Operating above 200 V risks irreversible avalanche failure.

Does the HER1003G have AEC-Q101 qualification?

The HER1003G itself is not AEC-Q101 qualified; however, the HER1003GH variant - distinguished by the "H" suffix in the ordering code - is fully AEC-Q101 qualified per the Ordering Information section. The HER1003GH undergoes additional stress testing for automotive use, including temperature cycling, humidity bias, and mechanical shock, while maintaining identical electrical specs and TO-220AB packaging as the HER1003G.

What is the reverse recovery time (t_rr) of the HER1003G and under what test conditions?

The HER1003G has a t_rr of 50 ns, measured under IF = 0.5 A, IR = 1.0 A, and I_rr = 0.25 A, as specified in the Electrical Specifications table. This value applies only to HER1001G–HER1004G variants and is validated at TA = 25 °C. It reflects the time required for minority carriers to clear after forward conduction, directly impacting switching loss in high-frequency converters.

How many anodes does the HER1003G have, and how are they configured?

The HER1003G features two independent anode terminals (Leads 1 and 2) and one common cathode (center tab), forming a dual-anode, single-cathode configuration. This layout - confirmed in the Pinout & Package section and Mechanical Data - enables flexible use in interleaved rectification, parallel current sharing, or separate circuit branches without external diode pairing.

What is the junction-to-case thermal resistance (R_θJC) of the HER1003G?

The HER1003G has an R_θJC of 1.5 °C/W, as published in the Thermal Performance section of the datasheet. This value is measured from junction to the center tab (cathode) surface and is critical for calculating heatsink requirements - for example, at 10 A continuous conduction with 1.0 V V_F, junction temperature rise above case is 15 °C, assuming ideal mounting.