Taiwan Semiconductor Corporation HER1003GH

Overview

HER1003GH from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified dual-die ultrafast recovery rectifier in TO-220AB package, rated for 10 A average forward current, 200 V repetitive peak reverse voltage (V_RRM), and 50 ns reverse recovery time (t_rr). It delivers low forward voltage (1.0 V at 5 A, 25°C) and supports freewheeling and DC–DC converter applications in automotive power systems.

For engineers reviewing the HER1003GH datasheet, HER1003GH pinout, HER1003GH application, or HER1003GH equivalent, key selection criteria include its AEC-Q101 qualification, 200 V V_RRM, 50 ns t_rr, 1.0 V V_F at 5 A, and TO-220AB thermal performance (R_θJC = 1.5 °C/W).

Technical Context

This device integrates two independent high-speed silicon diodes in a single TO-220AB package with common cathode configuration, enabling dual-channel rectification or parallel operation. Its ultrafast recovery (t_rr ≤ 50 ns) and low junction capacitance (60 pF at 4 V) minimize switching losses in high-frequency SMPS topologies.

The HER1003GH operates across –55°C to +150°C junction temperature range and sustains 125 A non-repetitive surge current (8.3 ms half-sine). Its matte tin-plated leads comply with J-STD-002 solderability and JESD201 Class 2 whisker resistance.

Key Specifications

Pinout & Package

Package: TO-220AB, 3-terminal, isolated tab (cathode-connected tab), RoHS- and halogen-free molding compound (UL 94V-0), matte tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with VS-10EWH02-M3 and MUR1020CTG, the HER1003GH uniquely combines AEC-Q101 qualification, dual-anode integration, and balanced 50 ns t_rr/1.0 V V_F - making it optimal for space-constrained, safety-compliant automotive power conversion where layout simplicity and thermal robustness are critical.

Availability

HER1003GH is available at Aetrix Electronics and suitable for automotive DC–DC converters, industrial switch-mode power supplies, and renewable energy inverter auxiliary supplies requiring stable component supply and long-term lifecycle support.

Supply support for HER1003GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for automotive and industrial markets.

The HER100xG series was developed to deliver AEC-Q101-qualified, ultrafast recovery rectifiers with dual-die integration for next-generation 48 V automotive power architectures and high-density industrial SMPS.

FAQ

What is the maximum junction temperature rating for HER1003GH?

The HER1003GH has a maximum junction temperature (T_J) of +150°C and a minimum of –55°C. This rating is validated per JEDEC standards and supports operation in under-hood automotive environments. Derating curves in the official TSC datasheet (Version I2104) define allowable I_F versus case temperature, with full 10 A capability maintained up to 100°C case temperature when R_θJC = 1.5 °C/W is respected. HER1003GH must be mounted with appropriate thermal interface and heatsinking to avoid exceeding T_J limits.

Is HER1003GH pin-compatible with other parts in the HER100xG family?

Yes, all HER100xG and HER100xGH devices share identical TO-220AB mechanical outline, pin assignment (anode1–anode2–cathode tab), and thermal pad layout. The "x" digit only changes V_RRM (50–1000 V) and related parameters like t_rr and C_J; electrical pinout and mounting torque (0.56 N·m max) remain unchanged across the family. HER1003GH can be substituted for HER1002GH or HER1004GH in existing layouts if voltage and recovery requirements align.

Does HER1003GH have a common-cathode or common-anode configuration?

The HER1003GH uses a common-cathode configuration: both internal diode dies share the metal tab as the cathode terminal, while Leads 1 and 2 serve as independent anodes. This is confirmed in TSC's marking diagram and package outline documentation (Version I2104, Page 5). The configuration enables dual-channel rectification with a single return path - ideal for center-tapped transformer secondaries or dual-output flyback designs.

What does the "H" suffix in HER1003GH signify?

The "H" suffix in HER1003GH indicates full AEC-Q101 qualification per Rev D requirements, including stress testing for high-temperature operating life (HTOL), temperature cycling (TC), and highly accelerated temperature-humidity stress (HAST). This distinguishes HER1003GH from the non-H variant (HER1003G), which lacks automotive qualification. TSC's ordering information explicitly states "H means AEC-Q101 qualified", and the device carries full test reports traceable to certified labs.

How is the thermal performance of HER1003GH validated?

HER1003GH's thermal performance is validated via standardized JEDEC JESD51-14 transient dual-interface measurement, yielding a junction-to-case thermal resistance (R_θJC) of 1.5 °C/W. This value is measured with the tab fully contacted to a cold plate under 50 psi pressure and verified across production lots. The TO-220AB package uses UL 94V-0 compliant molding compound and matte tin-plated leads, ensuring consistent thermal transfer and solder joint integrity in reflow and wave processes.