Taiwan Semiconductor Corporation HER104GH

Overview

HER104GH from Taiwan Semiconductor is a 1A, 300V high-efficiency glass-passivated axial-lead rectifier diode with 50ns reverse recovery time, 1.0V forward voltage at 1A, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the HER104GH datasheet, HER104GH pinout, HER104GH application, or HER104GH equivalent, key selection criteria include repetitive peak reverse voltage (300V), surge current capability (30A), junction-to-ambient thermal resistance (60°C/W), and DO-41 package compatibility in space-constrained DC/DC and freewheeling designs.

Technical Context

This device is a single-die, unidirectional silicon rectifier optimized for high-frequency switching applications. Its 50ns trr and low VF enable efficient energy transfer in flyback and boost converters operating up to several hundred kHz.

The glass-passivated junction ensures stable leakage performance across temperature (IR ≤5µA at 25°C, ≤150µA at 125°C), while the DO-41 package supports manual and automated through-hole assembly with J-STD-002-compliant tin-plated leads.

Key Specifications

Pinout & Package

DO-204AL (DO-41) axial-leaded package with cathode band marking; lead-free, RoHS-compliant, halogen-free molding compound meeting UL 94V-0.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH1R06 and MUR105, HER104GH uniquely balances 300V VRRM, 50ns trr, AEC-Q101 qualification, and DO-41 form factor-making it optimal for space-limited, thermally demanding automotive and industrial DC/DC rectification where both reliability and fast switching matter.

Availability

HER104GH is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial switch-mode power supplies, and LED driver secondary rectification requiring stable component supply and full traceability.

Supply support for HER104GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The HER101G–HER108G family was designed specifically for high-reliability, high-frequency rectification in automotive power systems and compact industrial SMPS-emphasizing AEC-Q101 compliance, fast recovery, and thermal robustness.

FAQ

What is the maximum repetitive peak reverse voltage (VRRM) for HER104GH?

The HER104GH has a VRRM of 300 V, meaning it can reliably block up to 300 volts of reverse voltage in repetitive operation without breakdown. This rating is confirmed in the absolute maximum ratings table of the official Taiwan Semiconductor datasheet (Version L2104), and aligns with its designation as the "4" variant in the HER101G–HER108G series (HER101G = 50V, HER104G = 300V). HER104GH maintains this rating under all specified operating conditions.

Is HER104GH AEC-Q101 qualified, and what does that mean for design use?

Yes, HER104GH is explicitly AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code and confirmed in the FEATURES section of the Taiwan Semiconductor datasheet. This qualification certifies that the device has passed rigorous stress tests-including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing-required for automotive electronic components. HER104GH is therefore approved for use in non-safety-critical automotive applications such as body control modules, infotainment power supplies, and lighting drivers.

What is the forward voltage (VF) of HER104GH at 1A and 25°C, and how does it impact efficiency?

The forward voltage of HER104GH is 1.0 V at IF = 1 A and TJ = 25°C, per the Electrical Specifications table. This low VF directly reduces conduction loss (P = VF × IF), yielding ~0.1W dissipation at full load-approximately 15% lower than legacy 1N4007 diodes (~1.15V). In a 12V/1A DC/DC output stage, this improves overall efficiency by 0.5–0.8%, which supports tighter thermal design and longer lifetime in sealed enclosures.

Does HER104GH have a defined reverse recovery time (trr), and why is it important?

Yes, HER104GH has a maximum reverse recovery time (trr) of 50 ns, measured at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. This fast recovery minimizes switching losses and voltage overshoot during turn-off transitions in high-frequency converters (e.g., >100 kHz QR flyback). Slower diodes would generate excessive heat and EMI in such topologies, whereas HER104GH enables cleaner waveforms and reduced snubber component stress-critical for meeting CISPR-22/32 EMI limits.

What package type and lead finish does HER104GH use, and is it RoHS compliant?

HER104GH uses the DO-204AL (DO-41) axial-leaded package with pure tin-plated leads, fully compliant with J-STD-002 for solderability. The molding compound is RoHS-compliant and halogen-free per IEC 61249-2-21. Its weight is approximately 0.330 g, and polarity is marked by a cathode band. This package supports both manual assembly and wave soldering, making HER104GH suitable for mixed-technology boards in automotive and industrial manufacturing.