Taiwan Semiconductor Corporation HER107G

Overview

HER107G from Taiwan Semiconductor is a high-efficiency, glass-passivated silicon rectifier diode rated for 800 V repetitive peak reverse voltage (VRRM), 1 A average forward current (IF), and 30 A non-repetitive surge current (IFSM), used as a freewheeling or output rectifier in switching-mode power supplies.

For engineers reviewing the HER107G datasheet, HER107G pinout, HER107G application, or HER107G equivalent, key selection criteria include its 1.7 V forward voltage at 1 A/25°C, 75 ns reverse recovery time, DO-41 package thermal resistance (RθJA = 60 °C/W), and AEC-Q101 qualification option (HER107GH).

Technical Context

The HER107G employs a single-die, planar junction structure with glass passivation for enhanced reliability and moisture resistance. Its 800 V VRRM rating and 75 ns trr support high-frequency operation in DC-DC converters and inverters where fast recovery and low conduction loss are critical.

Thermal performance is defined by RθJC = 15 °C/W and RθJA = 60 °C/W, enabling 1 A continuous operation up to 150 °C junction temperature. Reverse leakage remains ≤5 µA at 25°C and ≤150 µA at 125°C under rated VR.

Key Specifications

Pinout & Package

HER107G is housed in a DO-204AL (DO-41) axial-leaded package with cathode indicated by a band. Leads are pure tin-plated and solderable per J-STD-002; molding compound meets UL 94V-0.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with STTH1R08 and ES1J, HER107G offers the only AEC-Q101-qualified 800 V option in axial DO-41, balancing low VF, proven reliability, and automotive eligibility-making it optimal for cost-sensitive, through-hole industrial and automotive power stages.

Availability

HER107G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and industrial power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for HER107G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in rectifiers, TVS diodes, MOSFETs, and bipolar transistors.

The HER101G–HER108G family was designed for high-efficiency, high-reliability AC/DC and DC/DC power conversion in industrial, computing, and automotive applications-emphasizing low VF, fast trr, and robust packaging.

FAQ

What is the maximum repetitive peak reverse voltage (VRRM) of HER107G?

The HER107G has a VRRM rating of 800 V, meaning it can reliably block up to 800 volts of reverse voltage in repetitive operation without breakdown. This value is confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version L2104), and distinguishes HER107G from lower-voltage variants like HER106G (600 V) and HER108G (1000 V). Designers must ensure system peak reverse stresses remain below this limit with appropriate derating.

Is HER107G suitable for automotive applications?

Yes-while the standard HER107G is not AEC-Q101 qualified, the HER107GH variant is explicitly certified to AEC-Q101 for automotive under-hood use. Both share identical electrical specs (800 V VRRM, 1.7 V VF, 75 ns trr), but HER107GH undergoes additional stress testing for temperature cycling, humidity, and mechanical vibration. For automotive designs, specify HER107GH to meet qualification requirements.

What is the forward voltage (VF) of HER107G at 1 A and 25°C?

The forward voltage of HER107G is 1.7 V at 1 A forward current and 25°C junction temperature, as specified in the Electrical Specifications table. This value is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. At elevated temperatures (e.g., 100°C), VF decreases slightly (~1.55 V), which must be considered in thermal design and efficiency calculations for HER107G.

Does HER107G have a halogen-free and RoHS-compliant construction?

Yes-HER107G is both RoHS compliant and halogen-free per IEC 61249-2-21. The molding compound contains no brominated flame retardants or chlorine-based additives, and the pure tin-plated leads meet J-STD-002 solderability standards. These attributes are documented in the Mechanical Data and Features sections of the Taiwan Semiconductor datasheet (L2104), supporting compliance in EU, China, and other regulated markets.

What is the reverse recovery time (trr) of HER107G, and how is it tested?

The reverse recovery time (trr) of HER107G is 75 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A, per the Electrical Specifications table. This test uses a standardized double-pulse method with defined current transitions and is validated across the HER106G–HER108G group. The 75 ns trr enables efficient operation in switching power supplies up to ~100 kHz while minimizing switching losses and associated EMI generation in HER107G-based designs.