Taiwan Semiconductor Corporation HER1603G

Overview

HER1603G from Taiwan Semiconductor is a high-efficiency, dual-die ultrafast recovery rectifier in TO-220AB package, rated for 16 A average forward current, 200 V repetitive peak reverse voltage (V_RRM), and 125 A surge current (I_FSM). It delivers low 1.0 V forward voltage at 8 A and 25°C, enabling reduced conduction loss in DC/DC converters and switching inverters.

For engineers reviewing the HER1603G datasheet, HER1603G pinout, HER1603G application, or HER1603G equivalent, key selection criteria include its 200 V V_RRM, 50 ns reverse recovery time, 1.5 °C/W junction-to-case thermal resistance, dual-die configuration, and AEC-Q101 qualification option - all critical for automotive power supply and industrial SMPS design.

Technical Context

The HER1603G integrates two independent high-efficiency rectifier dies in a single TO-220AB package, supporting common-cathode or common-anode configurations depending on external wiring. Its ultrafast recovery (t_rr = 50 ns max) minimizes switching losses during turn-off in high-frequency converters.

Thermally, it features a low R_θJC of 1.5 °C/W and operates across –55°C to +150°C junction temperature range. The device uses matte tin-plated leads compliant with J-STD-002 and meets JESD201 Class 2 whisker resistance.

Key Specifications

Pinout & Package

Package: TO-220AB, 3-terminal through-hole, isolated tab, matte tin-plated leads, UL 94V-0 molding compound, 1.82 g typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH1602CW and MUR1620CT, the HER1603G uniquely combines dual-die integration, 1.0 V V_F, 50 ns t_rr, and AEC-Q101 qualification in TO-220AB - delivering superior power density and automotive readiness without layout or thermal redesign.

Availability

HER1603G is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial switch-mode inverters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable green sourcing.

Supply support for HER1603G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and computing markets since 1979.

The HER160xG series targets high-efficiency, high-reliability power conversion systems - specifically engineered for automotive-grade SMPS, industrial motor drives, and telecom infrastructure where low V_F, fast t_rr, and robust thermal performance are critical.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) of the HER1603G?

The HER1603G has a V_RRM rating of 200 V, as confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version J2104). This value is fixed for the HER1603G variant and distinguishes it from other members of the HER160xG family (e.g., HER1602G = 100 V, HER1604G = 300 V). Designers must ensure system reverse voltage transients remain below this limit to prevent breakdown. HER1603G maintains this rating across its full operating temperature range.

Does the HER1603G have AEC-Q101 qualification?

The base HER1603G is not AEC-Q101 qualified; however, the HER1603GH variant - indicated by the "H" suffix in the ordering code - is fully AEC-Q101 qualified per the manufacturer's ordering information. This qualification covers stress tests including temperature cycling, humidity bias, and mechanical shock. For automotive applications requiring qualification, HER1603GH must be specified; HER1603G alone does not carry this certification. Both share identical electrical and thermal specs.

What is the forward voltage (V_F) of the HER1603G at 8 A and 25°C?

The HER1603G exhibits a maximum forward voltage of 1.0 V at 8 A and 25°C, as specified in the Electrical Specifications table (TYP/MAX column) of the Taiwan Semiconductor datasheet. This value applies per diode within the dual-die structure. At elevated junction temperatures (e.g., 125°C), V_F decreases slightly due to negative temperature coefficient of silicon PN junctions. The 1.0 V rating directly enables lower conduction loss versus alternatives with higher V_F.

How many diodes are integrated into the HER1603G, and how are they configured?

The HER1603G integrates two independent ultrafast rectifier dies in a single TO-220AB package, wired with a common cathode terminal and separate anodes (Anode 1 and Anode 2). This configuration supports dual-phase rectification, interleaved topologies, or redundant freewheeling paths. The common-cathode arrangement is explicitly confirmed in the Pinout & Package section and mechanical drawings. No internal series or parallel connection exists between the dies - each operates independently with full voltage and current ratings.

What is the junction-to-case thermal resistance (R_θJC) of the HER1603G?

The HER1603G has a typical junction-to-case thermal resistance (R_θJC) of 1.5 °C/W, as published in the Thermal Performance section of the official datasheet. This value is measured under standardized conditions with proper mounting torque (≤0.56 N·m) and thermal interface material. It enables accurate thermal modeling for heatsink selection: for example, at 10 W dissipation and 25°C ambient, the case temperature rise is ~15°C, keeping junction temperature well within the 150°C maximum under typical heatsinking.