Taiwan Semiconductor Corporation HER1603PTH

Overview

HER1603PTH from Taiwan Semiconductor is a 16A, 200V high-efficiency ultrafast recovery rectifier in TO-247AD package, featuring dual-die construction, 50 ns reverse recovery time, and AEC-Q101 qualification for automotive-grade reliability. It delivers low forward voltage (1.0 V @ 8A, 25°C) and low thermal resistance for high-power DC/DC converters and snubber circuits.

For engineers reviewing the HER1603PTH datasheet, HER1603PTH pinout, HER1603PTH application, or HER1603PTH equivalent, key selection factors include its 200V V_RRM, 200A I_FSM, junction temperature range (–55°C to +150°C), AEC-Q101 qualification status, and TO-247AD mechanical compatibility with high-current heatsink mounting.

Technical Context

This device is a single-phase, dual-die, ultrafast recovery rectifier optimized for switching-mode power supplies operating at frequencies up to several hundred kHz. Its 50 ns trr and low 85 pF junction capacitance per diode minimize switching losses and EMI generation during hard commutation.

The HER1603PTH integrates two independent rectifying dies in one TO-247AD package with common cathode configuration (confirmed by Taiwan Semiconductor's marking diagram and package outline), enabling use in center-tapped transformer or dual-output topologies without external paralleling.

Key Specifications

Pinout & Package

Package: TO-247AD (TO-3P), 3-terminal through-hole package with isolated tab (anode/cathode terminals electrically isolated from case), matte tin-plated leads, UL 94V-0 molding compound, 5.6 g typical weight, 1.13 N·m max mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH1602CW and IXYS MUR1620CT, the HER1603PTH uniquely combines AEC-Q101 qualification, dual-die common-cathode integration, and 200A surge capability-making it optimal for space-constrained, high-reliability automotive and industrial power stages where thermal coupling and transient robustness are design-critical.

Availability

HER1603PTH is available at Aetrix Electronics and suitable for DC/DC converters, automotive lighting systems, and snubber circuits requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for HER1603PTH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and computing markets since 1979.

The HER160xPT series was designed specifically for high-efficiency, high-reliability switching power supplies in automotive and industrial environments-emphasizing ultrafast recovery, AEC-Q101 qualification, and robust thermal performance in TO-247AD packaging.

FAQ

What is the maximum junction temperature rating for HER1603PTH?

The HER1603PTH has a maximum junction temperature (T_J) rating of +150°C, verified per Taiwan Semiconductor's H2103 datasheet revision. This rating allows reliable operation in high-ambient environments such as automotive engine compartments or enclosed industrial power supplies. The HER1603PTH maintains specified electrical parameters up to this limit when mounted with appropriate heatsinking and airflow.

Is HER1603PTH pin-compatible with other devices in the HER160xPT family?

Yes, all HER160xPT and HER160xPTH devices share identical TO-247AD (TO-3P) mechanical footprint, pin assignment, and thermal pad layout. The HER1603PTH uses the same Anode1–Cathode–Anode2 pinout as HER1601PTH through HER1608PTH, enabling direct substitution within the same voltage grade without PCB changes-provided V_RRM and thermal requirements are met.

Does HER1603PTH have AEC-Q101 qualification?

Yes, the "H" suffix in HER1603PTH explicitly denotes AEC-Q101 qualification per Taiwan Semiconductor's ordering information note. This certification covers stress testing for temperature cycling, humidity bias, high-temperature operating life, and mechanical shock-validating the HER1603PTH for automotive powertrain and body electronics applications.

What is the reverse recovery time (t_rr) of HER1603PTH and how is it measured?

The HER1603PTH has a typical reverse recovery time (t_rr) of 50 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_RR = 0.25 A per Taiwan Semiconductor's H2103 datasheet. This value applies to both internal diodes and is confirmed via standardized double-pulse test circuit (Fig.6), making it directly usable for loss calculation in high-frequency SMPS design.

How does the dual-die structure of HER1603PTH affect thermal performance?

The HER1603PTH integrates two matched silicon dies in a single TO-247AD package with shared thermal path to the case. This dual-die structure achieves lower effective thermal resistance than two discrete TO-247 diodes due to reduced interconnect parasitics and uniform die-to-case contact. Measured R_θJC remains consistent with single-die equivalents, enabling predictable thermal modeling in dual-output or interleaved converter layouts.