Taiwan Semiconductor Corporation HER302GH

Overview

HER302GH from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified ultrafast recovery rectifier diode in DO-201AD package, rated for 100 V repetitive peak reverse voltage (VRRM), 3 A average forward current (IF), and 125 A non-repetitive surge current (IFSM), used in automotive DC-DC converters and switching inverters.

For engineers reviewing the HER302GH datasheet, HER302GH pinout, HER302GH application, or HER302GH equivalent, key selection criteria include its 100 V VRRM rating, 1.0 V typical forward voltage at 3 A, 50 ns reverse recovery time, AEC-Q101 qualification, and DO-201AD mechanical compatibility with high-surge industrial power supplies.

Technical Context

This ultrafast recovery rectifier employs a single-die silicon PN junction optimized for low conduction loss and fast switching in hard-commutated topologies. Its 50 ns trr and 10 µA max IR at 25°C support efficient operation in 50–200 kHz SMPS designs where reverse recovery energy minimization is critical.

The device features pure tin-plated leads compliant with J-STD-002, UL 94V-0 molding compound, and a junction-to-lead thermal resistance of 10 °C/W - enabling reliable thermal coupling to PCB copper in high-density automotive power modules.

Key Specifications

Pinout & Package

DO-201AD axial-leaded package with cathode band marking; lead finish: pure tin, solderable per J-STD-002; weight ≈1.10 g; flammability rating UL 94V-0.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH3L06S and MUR320, HER302GH uniquely combines DO-201AD form factor, 100 V rating optimized for 12–24 V systems, and full AEC-Q101 qualification - making it the only drop-in solution for automotive-grade 3 A ultrafast rectification where qualification and size are co-constrained.

Availability

HER302GH is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drive snubbers, UPS input stages, and telecom DC-DC modules requiring stable component supply with long-term lifecycle assurance.

Supply support for HER302GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The HER30xG series was designed specifically for high-reliability, high-surge ultrafast rectification in automotive and industrial switching power supplies - emphasizing AEC-Q101 compliance, low VF, and robust thermal performance in DO-201AD.

FAQ

What is the peak repetitive reverse voltage rating for HER302GH?

The HER302GH has a peak repetitive reverse voltage (VRRM) rating of 100 V. This value is defined per the Taiwan Semiconductor datasheet Version I2105 and verified across production lots. The "2" in HER302GH explicitly denotes the 100 V grade within the HER301G–HER308G family. Operating above this voltage risks irreversible avalanche breakdown.

Is HER302GH qualified to AEC-Q101 standards?

Yes, HER302GH is AEC-Q101 qualified. The "H" suffix in the part number explicitly indicates AEC-Q101 qualification per Taiwan Semiconductor's ordering information table. Test reports cover temperature cycling, high-temperature reverse bias, and ESD per the AEC-Q101-003/004/005 standards, with full qualification data available upon request for qualified customers.

What is the typical forward voltage drop of HER302GH at 3 A?

The typical forward voltage (VF) of HER302GH is 1.0 V at IF = 3 A and TJ = 25°C, as specified in the Electrical Specifications table of the official datasheet. This value is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. At elevated junction temperatures, VF decreases slightly due to negative temperature coefficient of silicon diodes.

Does HER302GH have the same package and pinout as HER302G?

Yes, HER302GH uses the identical DO-201AD package and axial pinout as HER302G - anode at unmarked end, cathode at banded end. The "H" suffix adds AEC-Q101 qualification but does not alter mechanical form, dimensions, or terminal configuration. Both share the same 1.10 g weight, UL 94V-0 molding, and pure tin plating per J-STD-002.

What is the maximum reverse recovery time for HER302GH?

The maximum reverse recovery time (trr) for HER302GH is 50 ns, measured under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per the datasheet test condition. This ultrafast recovery characteristic is consistent across the HER301G–HER305G subgroup and enables efficient operation in switching power supplies operating up to 200 kHz without excessive switching loss.