Taiwan Semiconductor Corporation HER306G

Overview

HER306G from Taiwan Semiconductor is a high-efficiency, ultra-fast recovery silicon rectifier diode in DO-201AD package, rated for 3 A average forward current, 600 V repetitive peak reverse voltage (V_RRM), and 75 ns reverse recovery time (t_rr). It delivers low forward voltage drop (1.7 V at 3 A, 25°C) and high surge capability (125 A IFSM), making it suitable for switching-mode power supplies and freewheeling paths in automotive-grade DC-DC converters.

For engineers reviewing the HER306G datasheet, HER306G pinout, HER306G application, or HER306G equivalent, key selection criteria include its 600 V V_RRM, 75 ns t_rr, DO-201AD mechanical compatibility, AEC-Q101 qualification option (HER306GH), and junction-to-lead thermal resistance of 10 °C/W - all critical for thermally constrained, high-frequency rectification designs.

Technical Context

The HER306G employs an optimized epitaxial planar structure to achieve ultra-fast soft recovery with minimal reverse recovery charge (Q_rr), reducing switching losses in hard-switched topologies. Its 600 V V_RRM rating targets mid-voltage industrial and automotive auxiliary power rails, while the 35 pF junction capacitance at 4 V supports stable high-frequency operation up to several hundred kHz.

Thermally, the device features a low R_θJL of 10 °C/W and maximum junction temperature of +150°C, enabling reliable operation under sustained 3 A conduction with moderate heatsinking. The pure tin-plated leads meet J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.

Key Specifications

Pinout & Package

HER306G is housed in the industry-standard DO-201AD axial-leaded package with cathode indicated by a band. Leads are pure tin-plated and compliant with J-STD-002 solderability and JESD201 Class 2 whisker testing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with VS-HER306-M3/54, HER306G offers slightly lower typical V_F and halogen-free compliance; versus MUR3060CT, HER306G provides direct DO-201AD drop-in capability with lower profile and no layout change, though at single-diode capacity.

Availability

HER306G is available at Aetrix Electronics and suitable for DC-DC converters, automotive auxiliary power supplies, and switching inverter freewheeling applications requiring stable component supply, long-term lifecycle assurance, and RoHS/halogen-free compliance.

Supply support for HER306G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, and protection components.

The HER301G–HER308G series was designed specifically for high-frequency, high-reliability rectification in automotive, industrial, and telecom power systems - emphasizing ultra-fast recovery, low loss, and robust thermal performance in axial packages.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for HER306G?

The HER306G has a V_RRM rating of 600 V, confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version I2105). This value is fixed for the HER306G variant and distinguishes it from adjacent family members like HER305G (400 V) and HER307G (800 V). Exceeding 600 V risks avalanche breakdown and irreversible damage to the HER306G junction.

Is HER306G AEC-Q101 qualified?

The base HER306G is not AEC-Q101 qualified; however, the HER306GH variant - identical in electrical and thermal specs - is fully AEC-Q101 qualified per the Ordering Information table. HER306GH uses the same DO-201AD package and shares all key parameters (600 V V_RRM, 75 ns t_rr, 1.7 V V_F) but adds automotive stress test validation. Always specify HER306GH for automotive under-hood use.

What is the reverse recovery time (t_rr) of HER306G and how is it measured?

The HER306G has a typical reverse recovery time (t_rr) of 75 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A, as specified in the Electrical Specifications table. This value applies to HER306G, HER307G, and HER308G only - lower-voltage variants (HER301G–HER305G) have faster t_rr (≤50 ns). The measurement reflects soft recovery behavior critical for EMI control.

Can HER306G replace HER305G or HER307G in an existing design?

HER306G can replace HER305G (400 V) only if the circuit's peak reverse voltage remains ≤600 V - doing so improves margin but increases V_F slightly (1.7 V vs. 1.3 V). Replacing HER307G (800 V) with HER306G is unsafe unless reverse voltage is verified ≤600 V. All three share DO-201AD package and pinout, but V_RRM and V_F differ; always validate stress margins before substitution of HER306G.

What is the junction-to-lead thermal resistance (R_θJL) of HER306G and why does it matter?

The HER306G has a typical R_θJL of 10 °C/W, meaning each watt of dissipated power raises the junction temperature 10°C above the lead temperature. This low value enables effective heat transfer to PCB copper pours or chassis mounts without external heatsinks - critical for compact, convection-cooled power supplies. It is measured per JEDEC standards and confirmed in the Thermal Performance section of the HER306G datasheet.