Taiwan Semiconductor Corporation HER307G

Overview

HER307G from Taiwan Semiconductor is a high-efficiency, single-die ultrafast recovery rectifier in DO-201AD package, rated for 3 A average forward current, 800 V repetitive peak reverse voltage, and 75 ns reverse recovery time. It delivers low forward voltage (1.7 V at 3 A, 25°C), low leakage (≤10 µA at 25°C), and high surge capability (125 A, 8.3 ms), enabling use in high-frequency switching power supplies.

For engineers reviewing the HER307G datasheet, HER307G pinout, HER307G application, or HER307G equivalent, key selection criteria include its 800 V V_RRM, 75 ns trr, DO-201AD thermal performance (R_θJL = 10 °C/W), and AEC-Q101 qualification availability - critical for automotive DC-DC converters and industrial inverters requiring reliability under thermal stress.

Technical Context

The HER307G employs an epitaxial planar junction structure optimized for ultrafast recovery, minimizing stored charge and tail current to reduce switching losses in high-frequency topologies. Its 800 V V_RRM and 75 ns trr are specified under standardized conditions (I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A), with junction capacitance of 35 pF at 1 MHz and 4.0 V reverse bias.

Thermally, it features a DO-201AD case with pure tin-plated leads compliant with J-STD-002 solderability and JESD201 Class 2 whisker resistance. Maximum junction temperature is 150°C, supported by R_θJL = 10 °C/W and R_θJA = 35 °C/W ratings, enabling stable operation in compact, convection-cooled designs.

Key Specifications

Pinout & Package

HER307G is housed in a DO-201AD axial-leaded package with cathode indicated by a band on the body. Leads are pure tin-plated and solderable per J-STD-002; polarity is unambiguous for PCB layout and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH3R08 and MUR3080CT, HER307G offers the smallest footprint (DO-201AD), lowest VF among 800 V ultrafast rectifiers in axial package, and direct compatibility with legacy through-hole layouts - making it optimal for cost-sensitive, space-constrained, single-diode SMPS upgrades.

Availability

HER307G is available at Aetrix Electronics and suitable for DC-DC converters, switching-mode inverters, and freewheeling applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HER307G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs since 1979.

The HER301G–HER308G family was designed specifically for high-efficiency, high-reliability switching power conversion in automotive, industrial, and telecom infrastructure - emphasizing ultrafast recovery, low VF, and AEC-Q101 qualification readiness.

FAQ

What is the maximum junction temperature rating for HER307G?

The HER307G has a maximum junction temperature (T_JMAX) of +150°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet (Version I2105). This rating applies under continuous operation with proper thermal management - including adherence to R_θJL = 10 °C/W and R_θJA = 35 °C/W limits. Operation beyond 150°C risks irreversible parametric shift or failure. HER307G must be derated linearly above 75°C case temperature per the forward current derating curve.

Is HER307G RoHS and halogen-free compliant?

Yes, HER307G is RoHS compliant and halogen-free per IEC 61249-2-21, as confirmed in the "Features" section of the Taiwan Semiconductor datasheet. The molding compound meets UL 94V-0 flammability rating, and the pure tin-plated leads satisfy J-STD-002 solderability requirements. These compliance attributes are standard across all HER301G–HER308G variants unless otherwise marked with suffixes indicating alternate material sets.

Does HER307G have AEC-Q101 qualification?

HER307G itself is not AEC-Q101 qualified; however, the AEC-Q101-qualified version is designated HER307GH (as noted in the Ordering Information table). The "H" suffix indicates full AEC-Q101 stress testing compliance for automotive applications. Standard HER307G is intended for industrial and commercial use. Engineers requiring automotive-grade reliability must specify HER307GH - identical electrically and mechanically but with extended qualification documentation and traceability.

What is the reverse recovery time (t_rr) test condition for HER307G?

The reverse recovery time of HER307G is measured at t_rr = 75 ns under the condition: forward current I_F = 0.5 A, reverse current I_R = 1.0 A, and reverse recovery current I_rr = 0.25 A, per the Electrical Specifications table. This test uses a standardized half-sine waveform with defined di/dt and voltage step, and results are valid for junction temperature T_J = 25°C. At elevated temperatures, t_rr increases - e.g., to ~110 ns at 125°C.

Can HER307G replace HER306G or HER308G in a design?

HER307G is not a direct replacement for HER306G (600 V) or HER308G (1000 V) without circuit review: its 800 V V_RRM sits between them, offering higher margin than HER306G but lower than HER308G. Substitution is acceptable only if system peak reverse voltage remains ≤800 V with safety margin. Forward characteristics (V_F, t_rr, I_FSM) are identical across HER306G–HER308G, so thermal and dynamic behavior remains consistent - but voltage rating must be validated per application stress profile.