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Taiwan Semiconductor Corporation HER307G-K

Part No.:
HER307G-K
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Diodes
Package:
DO-201AD, Axial
Datasheet:
AetrixHER307G-K.pdf
Description:
75NS, 3A, 800V, HIGH EFFICIENT R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,699

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Product details

Overview

HER307G-K from Taiwan Semiconductor is a high-efficiency, single-die ultrafast recovery rectifier diode in DO-201AD package, rated for 3A average forward current, 800V repetitive peak reverse voltage (VRRM), and 1.7V max forward voltage at 3A/25°C. It delivers low power loss in DC–DC converters and switching-mode inverters.

For engineers reviewing the HER307G-K datasheet, HER307G-K pinout, HER307G-K application, or HER307G-K equivalent, key selection factors include its 75ns reverse recovery time, 10°C/W junction-to-lead thermal resistance, RoHS- and halogen-free compliance, and suitability for freewheeling and snubber circuits requiring fast switching and thermal robustness.

Technical Context

This device operates as a unidirectional, single-anode/cathode silicon rectifier with ultrafast recovery characteristics optimized for high-frequency switching topologies. Its 75ns trr and 35pF junction capacitance support efficient operation above 100kHz in SMPS designs.

The DO-201AD package enables surface-mount-compatible through-hole mounting with 1.10g mass and UL 94V-0 molding compound. Pure tin-plated leads meet J-STD-002 solderability and JESD 201 Class 1A whisker resistance requirements.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM800 V - Maximum non-repetitive reverse blocking voltage; defines safe operating range in flyback/clamp circuits
IF3 A - Continuous average forward current at TC = 75°C; determines heatsink sizing in conduction-limited designs
VF (max)1.7 V @ 3A, 25°C - Directly impacts conduction loss (Pcond ≈ IF × VF) and thermal rise in high-duty-cycle operation
trr75 ns - Ultrafast recovery enables reduced switching loss and EMI in >50kHz converters
IFSM125 A - Peak surge rating for 8.3ms half-sine; supports inrush and transient overload tolerance
RθJL10 °C/W - Junction-to-lead thermal resistance; enables direct PCB copper pour thermal coupling without external heatsink
Junction Temp−55°C to +150°C - Wide operating range supports industrial and automotive under-hood environments

Pinout & Package

DO-201AD package: axial leaded, molded plastic case with cathode band marking; leads are pure tin-plated, J-STD-002 compliant, and meet JESD 201 Class 1A whisker resistance.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential node (e.g., switch node in buck converter); polarity must align with schematic symbol
CathodeForward current exit / reverse blocking terminalMarked by visible band; ties to output rail or ground return; reverse leakage <200 µA at 125°C ensures standby efficiency

Key Features

FeatureDesign Value
Ultrafast recovery (trr = 75 ns)Reduces switching loss and diode-induced ringing in hard-switched topologies like LLC resonant converters
Low VF (1.7 V max)Minimizes conduction loss at full load, improving overall system efficiency over standard FRDs
High IFSM (125 A)Withstands repeated start-up surges and short-circuit events without degradation in power supply front-ends
RoHS & halogen-freeComplies with IEC 61249-2-21; eliminates brominated flame retardants for safer end-of-life processing

Applications

DC–DC ConvertersSwitching Inverters

Use Scenario: Secondary-side rectification in isolated 48V–12V buck-derived DC–DC modules for telecom and server PSUs.

IC Role / Device Role / Timing Role: Output rectifier handling continuous 3A load with minimal voltage drop and thermal rise.

Use Value: 1.7V VF reduces conduction loss by ~15% vs. legacy FRDs, directly improving full-load efficiency.

Use Scenario: Freewheeling path in three-phase motor drive inverters operating at 16–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Clamp diode across IGBTs to absorb inductive kickback during turn-off.

Use Value: 75ns trr prevents reverse recovery tail current, eliminating shoot-through risk and reducing gate driver stress.

Snubber CircuitsAC–DC Front Ends

Use Scenario: RCD snubber network across MOSFET drain-source in flyback or forward converters.

IC Role / Device Role / Timing Role: Fast recovery path for snubber capacitor discharge during each switching cycle.

Use Value: Low CJ (35 pF) minimizes capacitive loading on the switching node, preserving ZVS/ZCS timing integrity.

Use Scenario: Input bridge rectification in universal-input (85–265 VAC) offline SMPS for industrial controls.

IC Role / Device Role / Timing Role: High-voltage input rectifier sustaining 800V PIV with low leakage (<10 µA at 25°C).

Use Value: 800V VRRM provides 2× safety margin over 265VAC × √2 ≈ 375V peak, ensuring long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH308SSame DO-201AD package, 800V VRRM, but 1.85V VF max and 100ns trrSlightly higher conduction loss and slower recovery; less suitable for >100kHz designsAcceptable where thermal margin exists and cost is prioritized over peak efficiency
ON Semiconductor MUR3080CTTO-220AB package, dual common-cathode configuration, 800V, 1.85V VF, 75ns trrRequires PCB layout change; intended for higher-current dual-output suppliesOnly viable if dual-diode topology and TO-220 thermal management are already in design

Compared with STTH308S and MUR3080CT, HER307G-K offers the lowest VF (1.7V) and smallest footprint among 800V/3A ultrafast rectifiers in DO-201AD, making it optimal for space-constrained, high-efficiency single-output converters.

Availability

HER307G-K is available at Aetrix Electronics and suitable for DC–DC converters, switching inverters, and freewheeling applications requiring stable component supply, consistent parametric performance, and RoHS-compliant manufacturing.

Supply support for HER307G-K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The HER30xG-K series targets high-frequency power conversion systems, delivering ultrafast recovery, low VF, and rugged thermal performance in standardized DO-201AD packages for cost-sensitive yet performance-driven designs.

FAQ

What is the maximum junction temperature rating for HER307G-K?

The HER307G-K has a maximum junction temperature (TJ) of +150°C, with a storage temperature range of −55°C to +150°C. This rating allows reliable operation in industrial ambient conditions up to +85°C when mounted on adequate copper area, leveraging its 10°C/W junction-to-lead thermal resistance. The HER307G-K must be derated per the forward current derating curve above 75°C case temperature.

Does HER307G-K have a specified reverse recovery time, and how is it measured?

Yes, HER307G-K specifies a maximum reverse recovery time (trr) of 75 ns, tested under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. This value is confirmed in the Electrical Specifications table and applies specifically to HER306G-K through HER308G-K variants. The HER307G-K's 75 ns trr enables clean commutation in high-frequency switching circuits without excessive ringing or loss.

Is HER307G-K RoHS compliant and halogen-free?

Yes, HER307G-K is RoHS compliant and halogen-free per IEC 61249-2-21. The molding compound meets UL 94V-0 flammability rating, and the pure tin-plated leads satisfy J-STD-002 solderability and JESD 201 Class 1A whisker resistance. These specifications are explicitly stated in the Mechanical Data and Features sections of the official Taiwan Semiconductor datasheet for HER307G-K.

What is the forward voltage drop of HER307G-K at rated current?

The HER307G-K has a maximum forward voltage (VF) of 1.7 V at 3 A forward current and 25°C junction temperature, as specified in the Electrical Specifications table. This value is measured under pulse test conditions (PW = 0.3 ms) and represents the upper limit for conduction loss calculation. At elevated temperatures, VF decreases slightly, but thermal design must account for worst-case 1.7 V at room temperature.

What packaging options are available for HER307G-K?

HER307G-K is supplied in DO-201AD package with two standard packing formats: 1,250 units per tape-and-reel (ordering code HER307G-K) and 500 units per ammo box (ordering code HER307G-K A0G). Both versions share identical electrical and thermal specifications; the choice depends on assembly method-tape-and-reel for automated pick-and-place, ammo box for manual or semi-automated insertion.

HER307G-K Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
DO-201AD, Axial
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
75 ns
Current - Reverse Leakage @ Vr:
10 µA @ 800 V
Capacitance @ Vr, F:
35pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-201AD
Operating Temperature - Junction:
-55°C ~ 150°C

HER307G-K FAQ

1.How can I place an order for HER307G-K through Aetrix?

Please submit a Request for Quotation (RFQ) for HER307G-K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HER307G-K reliable?

The price and inventory of HER307G-K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HER307G-K is usually 5 days.

3.What payment methods are accepted for HER307G-K?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HER307G-K transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HER307G-K?

HER307G-K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HER307G-K order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HER307G-K?

For technical support, including HER307G-K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HER307G-K requirements.

6.How does Aetrix verify that HER307G-K is sourced from the original manufacturer or authorized distributors?

All HER307G-K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HER307G-K meets industry standards.

7.What is the process for return or replacement of HER307G-K?

All HER307G-K units undergo pre-shipment inspection (PSI). If there is an issue with HER307G-K, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HER307G-K part is unused and in its original packaging.

Return procedure for HER307G-K:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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