Taiwan Semiconductor Corporation HER308GH

Overview

HER308GH from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified ultrafast recovery rectifier diode in DO-201AD package, rated for 3A average forward current, 1000V repetitive peak reverse voltage (V_RRM), and 75ns reverse recovery time (t_rr) at 1.0A reverse recovery current. It delivers low forward voltage drop (1.7V max at 3A, 25°C) and supports automotive-grade power conversion in high-frequency switching topologies.

For engineers reviewing the HER308GH datasheet, HER308GH pinout, HER308GH application, or HER308GH equivalent, key selection criteria include its 1000V V_RRM, 75ns t_rr, AEC-Q101 qualification, DO-201AD thermal performance (R_θJL = 10°C/W), and suitability for freewheeling and DC/DC converter output stages where fast recovery and surge robustness are critical.

Technical Context

This device employs a single-die planar epitaxial construction optimized for ultrafast soft recovery, minimizing switching losses and EMI generation in hard-switched converters. Its 1000V blocking capability and 125A non-repetitive surge rating (8.3ms half-sine) enable use in primary-side rectification and high-voltage auxiliary supplies.

The HER308GH exhibits 35pF junction capacitance at 4.0V reverse bias and 1MHz, supporting stable high-frequency operation; its 10µA max reverse leakage at 25°C and 200µA at 125°C ensures low standby loss in thermally demanding environments.

Key Specifications

Pinout & Package

HER308GH uses the DO-201AD axial-leaded plastic package with cathode band marking. Leads are pure tin-plated per J-STD-002, compliant with JESD201 Class 2 whisker testing, and UL 94V-0 molded compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH3010DJF and MUR3100E, HER308GH uniquely combines AEC-Q101 qualification, DO-201AD form factor, and 1.7V V_F max - making it optimal for space-constrained automotive power modules requiring validated reliability and low conduction loss.

Availability

HER308GH is available at Aetrix Electronics and suitable for automotive onboard chargers, industrial DC/DC converters, and UPS inverter freewheeling paths requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for HER308GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The HER30xG series was designed specifically for high-efficiency, high-reliability switching power supplies requiring ultrafast recovery, high surge tolerance, and automotive-grade qualification - targeting next-generation EV charging and energy infrastructure.

FAQ

What is the maximum junction temperature rating for HER308GH?

The HER308GH has a maximum junction temperature (T_JMAX) of +150°C, verified per JEDEC standards. This rating allows sustained operation in under-hood automotive environments and enclosed industrial power supplies. Derating curves in the official datasheet specify that average forward current must be reduced to 2.1A at 100°C case temperature to maintain safe thermal margins. HER308GH's 10°C/W junction-to-lead thermal resistance enables accurate thermal modeling when lead temperature is monitored.

Is HER308GH pin-compatible with other HER30xG variants?

Yes, HER308GH shares identical DO-201AD package dimensions, lead spacing, and polarity marking (cathode band) with all HER301G–HER307G variants. All members of the HER30xG family use the same mechanical outline and soldering footprint. However, electrical parameters differ significantly - especially V_RRM (50V to 1000V) and t_rr (50ns to 75ns) - so substitution requires verification against system voltage and switching frequency requirements. HER308GH is not electrically interchangeable with lower-voltage variants like HER304G.

Does HER308GH meet halogen-free and RoHS requirements?

Yes, HER308GH complies with both RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. The molding compound contains no brominated or chlorinated flame retardants, and lead content is below 1000 ppm. Tin-plated leads meet J-STD-002 for solderability, and the device passes JESD201 Class 2 whisker testing. These qualifications are confirmed in Taiwan Semiconductor's material declaration and certificate of compliance for HER308GH.

What is the reverse recovery time test condition for HER308GH?

HER308GH reverse recovery time (t_rr) is measured under the condition: forward current I_F = 0.5A, reverse current I_R = 1.0A, and reverse recovery current tail I_rr = 0.25A, per JEDEC standard JESD24-11. This test setup reflects real-world switching behavior in hard-commutated converters. The specified maximum t_rr of 75ns applies across the full operating temperature range (−55°C to +150°C), with typical values tighter at room temperature. HER308GH's soft recovery waveform minimizes voltage overshoot during turn-off.

Can HER308GH be used in surface-mount designs?

No, HER308GH is an axial-leaded DO-201AD device intended for through-hole mounting only. It does not have gull-wing, J-lead, or QFN terminations compatible with SMT reflow processes. While some customers manually mount DO-201AD parts on SMT boards using adhesive and selective soldering, this violates IPC-A-610 Class 2/3 process requirements and voids AEC-Q101 qualification. For surface-mount alternatives, consider Taiwan Semiconductor's SOD-123HE or SMAHE packages - but note these are different part numbers with distinct ratings and thermal performance.