Taiwan Semiconductor Corporation HER602G B0G

Overview

HER602G from Taiwan Semiconductor is a high-efficiency, glass-passivated silicon rectifier diode in R-6 package, rated for 6 A average forward current, 100 V repetitive peak reverse voltage (V_RRM), and 150 A non-repetitive surge current. It delivers low forward voltage drop (1.0 V at 6 A, 25°C) and fast reverse recovery time (≤50 ns), making it suitable for switching-mode power supplies and freewheeling paths in automotive-grade DC-DC converters.

For engineers reviewing the HER602G datasheet, HER602G pinout, HER602G application, or HER602G equivalent, key selection criteria include its AEC-Q101 qualification option (HER602GH), R-6 mechanical compatibility, 150°C max junction temperature, and verified 10 µA reverse leakage at 25°C - all critical for thermal reliability and EMI-sensitive high-frequency converter designs.

Technical Context

The HER602G employs a single-die, planar-junction structure with glass passivation for enhanced moisture resistance and long-term stability under thermal cycling. Its 100 V V_RRM rating targets mid-voltage industrial and automotive auxiliary power rails where higher breakdown margin than standard 50 V rectifiers is required without sacrificing VF or trr performance.

Thermal design is supported by a junction-to-ambient thermal resistance of 37°C/W in free-air conditions and a maximum operating junction temperature of 150°C. The device's 80 pF junction capacitance at 1 MHz and 4 V reverse bias contributes to predictable high-frequency switching behavior in snubberless or low-inductance layouts.

Key Specifications

Pinout & Package

HER602G uses the industry-standard R-6 axial-leaded package with cathode indicated by a band on the body. Leads are pure tin-plated and solderable per J-STD-002. Weight ≈1.65 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH6L06S and MUR620CT, HER602G offers optimal balance of 100 V rating, 1.0 V forward drop, 50 ns recovery, and R-6 through-hole compatibility - making it preferred for cost-sensitive, space-constrained, and thermally demanding 48 V automotive and industrial converter designs where AEC-Q101 compliance is required.

Availability

HER602G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switch-mode power supplies, and uninterruptible power systems requiring stable component supply, long-lifecycle support, and traceable green sourcing.

Supply support for HER602G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in high-reliability rectifiers, TVS devices, and power MOSFETs.

The HER601G–HER606G family was designed specifically for high-efficiency, high-surge, and thermally robust rectification in automotive and industrial power conversion - emphasizing glass passivation, AEC-Q101 readiness, and consistent R-6 mechanical form factor across voltage grades.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for HER602G?

The HER602G has a maximum repetitive peak reverse voltage (V_RRM) of 100 V, as specified in the absolute maximum ratings table. This value is fixed for the HER602G variant and distinguishes it from other members of the HER601G–HER606G series (e.g., HER601G = 50 V, HER603G = 200 V). Operation beyond 100 V reverse bias risks avalanche breakdown and permanent damage to the HER602G.

Is HER602G suitable for automotive applications?

Yes - the HER602G is offered in an AEC-Q101 qualified version (HER602GH) that passes stress tests including temperature cycling, highly accelerated life testing (HALT), and biased humidity testing. While the standard HER602G is not AEC-Q101 certified, its construction (glass passivation, 150°C T_J, tin-plated leads) supports automotive under-hood use when validated per customer qualification protocols. Always specify HER602GH for production automotive designs.

What is the forward voltage drop (V_F) of HER602G at rated current?

The HER602G exhibits a typical forward voltage drop of 1.0 V at 6 A forward current and 25°C junction temperature, as confirmed in the electrical specifications table. This value increases to approximately 1.15 V at 125°C. The low V_F directly reduces conduction losses - for example, 6 W dissipation at full load - making HER602G efficient for high-current rectification tasks.

Does HER602G have a halogen-free and RoHS-compliant construction?

Yes - HER602G complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The molding compound contains no brominated flame retardants or chlorine-based additives, and the pure tin-plated leads meet J-STD-002 solderability requirements. These attributes are documented in the mechanical data and ordering information sections of the official Taiwan Semiconductor datasheet (Version H2104).

What is the reverse recovery time (t_rr) specification for HER602G?

The HER602G has a maximum reverse recovery time (t_rr) of 50 ns under test conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A. This fast recovery characteristic is shared with HER601G–HER605G variants and is critical for minimizing switching loss and EMI in high-frequency (>100 kHz) power converters. The HER606G variant has a longer t_rr of 75 ns due to its higher voltage design.