Taiwan Semiconductor Corporation HER602G R0G

Overview

HER602G from Taiwan Semiconductor is a high-efficiency, glass-passivated silicon rectifier diode rated for 6 A average forward current and 100 V repetitive peak reverse voltage, with low 1.0 V forward voltage at 6 A and 25°C, used in DC-DC converters and switching-mode power supplies.

For engineers reviewing the HER602G datasheet, HER602G pinout, HER602G application, or HER602G equivalent, key selection criteria include its R-6 axial package, 150 A surge rating, 50 ns reverse recovery time, junction-to-ambient thermal resistance of 37°C/W, and AEC-Q101 qualification availability (HER602GH variant).

Technical Context

The HER602G is a single-die, standard-recovery silicon rectifier optimized for high-current, medium-voltage switching applications. It features a glass-passivated junction for enhanced reliability and moisture resistance, and exhibits low conduction loss due to its 1.0 V VF at 6 A and 25°C.

Its 50 ns reverse recovery time (trr) and 80 pF junction capacitance at 1 MHz / 4.0 V support efficient operation in 20–100 kHz switching converters. The device operates across –55°C to +150°C junction temperature range and meets JESD201 Class 2 whisker resistance and RoHS/halogen-free requirements.

Key Specifications

Pinout & Package

Package: R-6 axial leaded package with pure tin-plated leads, UL 94V-0 molding compound, cathode indicated by band, weight ≈1.65 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH6L06D and MUR620CT, the HER602G delivers superior conduction efficiency at 100 V with compact R-6 packaging, eliminating heatsink needs below 6 A and simplifying PCB routing in space-constrained industrial and automotive auxiliary supplies.

Availability

HER602G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and industrial SMPS requiring stable component supply with consistent parametric performance and long-term manufacturability.

Supply support for HER602G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The HER60xG series is part of TSC's high-efficiency rectifier product line, designed specifically for high-current, medium-voltage switching power conversion where low VF, fast recovery, and rugged packaging are essential.

FAQ

What is the maximum repetitive peak reverse voltage (VRRM) rating for HER602G?

The HER602G has a VRRM rating of 100 V, meaning it reliably blocks up to 100 V of reverse voltage in repetitive operation without breakdown. This value is fixed per the device's marking and datasheet Table "Absolute Maximum Ratings" and distinguishes HER602G from other members of the HER601G–HER606G family (e.g., HER601G = 50 V, HER603G = 200 V). Exceeding 100 V risks avalanche failure.

Does HER602G have an AEC-Q101 qualified version?

Yes - the HER602GH variant is AEC-Q101 qualified and shares identical electrical specifications with HER602G, including 100 V VRRM, 6 A IF, and 50 ns trr. The "H" suffix denotes automotive qualification; it uses the same R-6 package and green molding compound, and is intended for under-hood and chassis-mounted power modules where extended temperature and reliability validation are required.

What is the forward voltage (VF) of HER602G under typical operating conditions?

The HER602G exhibits a typical forward voltage of 1.0 V at 6 A and 25°C junction temperature, as specified in the "Electrical Specifications" table. This value increases to approximately 0.85 V at 125°C due to negative temperature coefficient of VF. The low VF directly reduces conduction loss - e.g., 0.6 W at 6 A - making HER602G advantageous over higher-VF rectifiers in thermally constrained designs.

How does the R-6 package of HER602G impact thermal performance?

The R-6 axial package of HER602G provides a junction-to-ambient thermal resistance (RθJA) of 37°C/W under natural convection, enabling 6 A continuous operation without a heatsink when PCB copper area and airflow meet minimum layout guidelines. Its 1.65 g mass and UL 94V-0 compound contribute to mechanical stability and flame resistance, while pure tin leads ensure reliable solder joint formation per J-STD-002.

What is the reverse recovery time (trr) of HER602G, and why does it matter?

The HER602G has a maximum reverse recovery time (trr) of 50 ns at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. This fast recovery minimizes stored charge (Qrr) during turn-off, reducing switching losses and voltage overshoot in 50–100 kHz switching converters. Slower diodes (e.g., >100 ns) would increase EMI and require larger snubbers, whereas HER602G supports clean, efficient hard-switched topologies.