Taiwan Semiconductor Corporation HERA803G C0G

Overview

HERA803G from Taiwan Semiconductor is an 8A, 200V glass-passivated high-efficiency rectifier diode in TO-220AC package, featuring 1.0V forward voltage at 8A/25°C, 150A surge capability, and 50ns reverse recovery time. It serves as a primary output rectifier in DC-DC converters and switching inverters requiring low conduction loss and fast recovery.

For engineers reviewing the HERA803G datasheet, HERA803G pinout, HERA803G application, or HERA803G equivalent, key selection criteria include V_RRM = 200V, I_F = 8A, V_F ≤ 1.0V @ 8A, t_rr ≤ 50ns, and thermal resistance R_θJC = 2°C/W - all critical for high-frequency SMPS and automotive-grade power supplies.

Technical Context

This single-die, planar junction rectifier uses glass passivation for enhanced moisture and contamination resistance. Its 200V V_RRM rating targets mid-voltage industrial and automotive DC-DC stages where higher voltage margin than 100V devices is required without sacrificing speed or VF.

The device operates across –55°C to +150°C junction temperature range and delivers stable 10µA max reverse leakage at 25°C and 400µA at 125°C, supporting reliable freewheeling in thermally demanding environments with minimal standby loss.

Key Specifications

Pinout & Package

Package: TO-220AC - Single-ended, through-hole package with isolated tab (cathode-connected), matte tin-plated leads compliant with J-STD-002 solderability, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH8R02DJF and VS-8EWH02FN-M3, the HERA803G offers optimal balance of VF (≤1.0V), t_rr (≤50ns), and AEC-Q101 availability in a cost-optimized TO-220AC platform - making it ideal for volume industrial and automotive auxiliary power designs.

Availability

HERA803G is available at Aetrix Electronics and suitable for DC-DC converter output rectification, switching inverter freewheeling, and automotive on-board charger auxiliary supplies requiring stable component supply and long-term manufacturability.

Supply support for HERA803G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The HERA803G belongs to TSC's high-efficiency rectifier product line, engineered specifically for high-frequency, high-reliability power conversion in harsh-environment applications such as automotive electrification and industrial automation.

FAQ

What is the maximum junction temperature rating for HERA803G?

The HERA803G has a maximum junction temperature (T_J) rating of +150°C, with operational capability from –55°C to +150°C. This wide range supports deployment in engine bay and industrial control cabinet environments where ambient temperatures exceed 85°C. The device maintains specified electrical parameters within this full range, and its 2°C/W junction-to-case thermal resistance enables effective heatsinking even at elevated ambient conditions.

Is HERA803G pin-compatible with other TO-220AC rectifiers like HERA802G or HERA804G?

Yes, HERA803G shares identical TO-220AC mechanical dimensions, lead frame layout, and terminal configuration (anode–cathode–NC) with all members of the HERA801G–HERA808G family. All variants use the same pinout and mounting footprint, allowing direct substitution based on required V_RRM without PCB redesign. However, forward voltage and reverse recovery time vary across the series, so electrical validation is required for each replacement.

Does HERA803G meet automotive qualification standards?

The standard HERA803G is not AEC-Q101 qualified, but the HERA803GH variant is fully AEC-Q101 qualified and shares identical electrical and thermal specifications. HERA803GH undergoes stress testing including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT) per AEC-Q101 Rev D. Both versions use the same TO-220AC package and marking format, differing only in qualification status and date code suffix.

What is the reverse leakage current specification for HERA803G at elevated temperature?

HERA803G specifies a maximum reverse leakage current (I_R) of 10 µA at 25°C and rated V_RRM, increasing to 400 µA at 125°C. This behavior is consistent across the HERA801G–HERA805G group and reflects stable silicon junction characteristics under thermal stress. The low leakage at high temperature ensures minimal standby power loss in always-on auxiliary supplies used in automotive and IoT edge devices.

Can HERA803G be used in surface-mount designs?

No, HERA803G is exclusively offered in the through-hole TO-220AC package and is not available in surface-mount variants such as D²PAK or TO-263. Its mechanical design requires screw or clip mounting to a heatsink, and the tab serves as both cathode terminal and primary thermal path. For SMT-based layouts, designers should consider alternative families like TSC's WJ series or evaluate board-level adaptation using TO-220AC-to-SMD adapter carriers - though thermal performance will differ.