Taiwan Semiconductor Corporation HERA804GH

Overview

HERA804GH from Taiwan Semiconductor is an AEC-Q101-qualified, glass-passivated, single-die silicon rectifier in TO-220AC package, rated for 8 A average forward current, 300 V repetitive peak reverse voltage (V_RRM), and 150 A non-repetitive surge current - used in automotive-grade DC/DC converters and freewheeling paths.

For engineers reviewing the HERA804GH datasheet, HERA804GH pinout, HERA804GH application, or HERA804GH equivalent, key selection criteria include its 1.0 V max forward voltage at 8 A/25°C, 50 ns reverse recovery time, 65 pF junction capacitance, 2 °C/W junction-to-case thermal resistance, and AEC-Q101 qualification for under-hood power conversion.

Technical Context

This device is a unidirectional, single-phase, standard recovery rectifier optimized for high-efficiency switching-mode power supplies. Its glass-passivated junction ensures stable operation up to 150 °C junction temperature, while the TO-220AC package enables direct heatsink mounting with ≤0.56 N·m torque.

The HERA804GH delivers low conduction loss (V_F ≤ 1.0 V @ 8 A) and fast switching response (t_rr ≤ 50 ns), making it suitable for 50–100 kHz DC/DC topologies where reverse recovery charge and thermal management are critical.

Key Specifications

Pinout & Package

TO-220AC package: 3-terminal, single-diode configuration with anode (pin 1), cathode (pin 2), and electrically connected tab (pin 3, cathode). Mounting hole centered on tab; matte tin-plated leads compliant with J-STD-002 solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH8R03G and MUR830, the HERA804GH uniquely combines AEC-Q101 compliance, 1.0 V V_F ceiling, and 50 ns t_rr in a single TO-220AC rectifier - making it the only drop-in option for automotive 300 V bus designs requiring both reliability and efficiency.

Availability

HERA804GH is available at Aetrix Electronics and suitable for automotive power conversion, industrial DC/DC modules, and solar microinverter designs requiring stable component supply, long-lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for HERA804GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in high-reliability rectifiers, TVS diodes, and MOSFETs for automotive and industrial markets.

The HERA80xG series was developed specifically to address the need for AEC-Q101-qualified, high-current, medium-voltage rectifiers in next-generation vehicle electrification and renewable energy systems.

FAQ

What is the maximum junction temperature rating for HERA804GH?

The HERA804GH has a maximum junction temperature (T_J) of +150 °C, validated per AEC-Q101 stress test conditions. This rating allows sustained operation in engine bay environments when mounted on a heatsink with ≤2 °C/W thermal resistance. The device remains within safe operating area up to this limit, provided case temperature does not exceed 125 °C under continuous 8 A load.

Is HERA804GH pin-compatible with other TO-220AC rectifiers like HERA803GH or HERA805GH?

Yes - all HERA80xGH devices share identical TO-220AC mechanical footprint, pinout (anode–cathode–tab), and mounting interface. HERA804GH can replace HERA803GH (200 V) or HERA805GH (400 V) on the same PCB, provided voltage derating and thermal margins accommodate the different V_RRM and V_F characteristics of each variant.

Does HERA804GH require a heatsink in 8 A continuous operation?

Yes - at 8 A continuous current, HERA804GH dissipates approximately 8 W (based on V_F ≈ 1.0 V). With R_θJC = 2 °C/W and ambient ≤50 °C, a heatsink with ≤10 °C/W total thermal resistance (including interface) is required to maintain T_J ≤ 150 °C. Board-level copper alone is insufficient for full-load operation.

What does the "H" suffix in HERA804GH signify?

Per Taiwan Semiconductor's ordering code, the "H" suffix in HERA804GH explicitly denotes AEC-Q101 qualification. This includes full stress testing across temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge (ESD) per automotive standards - distinguishing it from the non-H variant HERA804G, which lacks this qualification.

How does HERA804GH's reverse recovery time compare to standard recovery rectifiers?

HERA804GH has t_rr ≤ 50 ns, placing it in the fast-recovery category - significantly faster than standard recovery rectifiers (typically 1–5 µs). This enables reduced switching loss and lower EMI in 50–200 kHz converters. Unlike ultrafast types (e.g., MUR830, t_rr = 35 ns), HERA804GH balances speed with lower V_F (1.0 V vs. 1.25 V), optimizing overall system efficiency.