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Taiwan Semiconductor Corporation HERA806G C0G

Part No.:
HERA806G C0G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
AetrixHERA806G C0G.pdf
Description:
DIODE GEN PURP 600V 8A TO220AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,301

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Product details

Overview

HERA806G from Taiwan Semiconductor is an AEC-Q101-qualified, glass-passivated, single-die ultrafast recovery rectifier in TO-220AC package, rated for 600 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM), used in DC-DC converters and switching-mode inverters.

For engineers reviewing the HERA806G datasheet, HERA806G pinout, HERA806G application, or HERA806G equivalent, key selection criteria include its 1.7 V max forward voltage at 8 A/25°C, 80 ns reverse recovery time, 55 pF junction capacitance, 2 °C/W junction-to-case thermal resistance, and suitability for automotive-grade freewheeling and snubber circuits.

Technical Context

The HERA806G employs a planar epitaxial silicon die with glass passivation for enhanced reliability and moisture resistance. Its ultrafast recovery (trr ≤ 80 ns) enables high-frequency operation in SMPS topologies up to several hundred kHz.

Thermally, it features low RθJC = 2 °C/W and operates across -55°C to +150°C junction temperature range. The device supports high surge capability (IFSM = 150 A, 8.3 ms half-sine) without thermal runaway under transient overload conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - Maximum repetitive reverse blocking voltage; defines usable input voltage range in boost/flyback stages
IF8 A - Continuous average forward current at TC = 100°C; determines heatsink sizing in conduction-limited designs
IFSM150 A - Non-repetitive surge rating; supports inrush current handling in power-up sequences
VF (max)1.7 V @ 8 A, 25°C - Forward conduction loss directly impacts efficiency and thermal design in high-current paths
trr80 ns - Ultrafast reverse recovery; minimizes switching losses and EMI in hard-switched converters
CJ55 pF @ 1 MHz, VR = 4 V - Low junction capacitance reduces capacitive turn-on loss and improves high-frequency stability
RθJC2 °C/W - Enables direct mounting to heatsinks with predictable thermal rise under full load

Pinout & Package

Package: TO-220AC - 3-lead, single-ended, through-hole package with isolated tab (cathode-connected tab), matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Lead 1)Input current entry pointConnected to source/switch node; must withstand full reverse voltage during off-state
Cathode (Lead 2)Output current exit pointElectrically tied to metal tab; requires insulated mounting when referenced to non-ground potentials
Tab (Cathode)Primary heat path & cathode terminalProvides low-thermal-resistance path to heatsink; electrically active - isolation required if not at system ground

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive underhood applications including temperature cycling, mechanical shock, and humidity testing
Glass passivated junctionPrevents moisture ingress and metallization corrosion, extending lifetime in humid or condensing environments
Ultrafast trr ≤ 80 nsReduces switching loss and diode-induced ringing in 100–500 kHz SMPS, improving EMI profile
Low RθJC = 2 °C/WEnables compact thermal design with minimal heatsink mass for 8 A continuous conduction
Halogen-free & RoHS compliantFulfills IEC 61249-2-21 and EU RoHS requirements for environmentally constrained industrial and automotive programs

Applications

Automotive DC-DC ConvertersIndustrial Switch-Mode Inverters

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicle architecture.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous buck-boost stage, conducting during low-side switch off-time.

Use Value: HERA806G's 600 V VRRM safely clamps transients from inductive kickback; 80 ns trr limits cross-conduction loss during dead-time transitions.

Use Scenario: Output rectification in 3 kW three-phase industrial inverter driving PMSM motors.

IC Role / Device Role / Timing Role: Output freewheeling diode in IGBT-based inverter leg, managing reactive energy return during PWM commutation.

Use Value: HERA806G's 150 A IFSM absorbs motor regeneration surges; glass passivation ensures long-term reliability in dusty, vibration-prone factory environments.

Server Power Supply ORingRenewable Energy Charge Controllers

Use Scenario: ORing diode in redundant 12 V server backplane power distribution.

IC Role / Device Role / Timing Role: Unidirectional current gate preventing reverse current flow between parallel power supplies.

Use Value: HERA806G's 1.7 V VF max ensures low conduction loss at 8 A, minimizing thermal stress and improving system efficiency over discrete MOSFET-based ideal diodes.

Use Scenario: MPPT charge controller in off-grid solar system converting PV array output to 24 V battery bank.

IC Role / Device Role / Timing Role: Input rectifier in high-frequency flyback or forward converter handling variable-input, high-voltage PV strings.

Use Value: HERA806G's 600 V VRRM accommodates open-circuit PV voltages up to 500 V; 55 pF CJ reduces high-frequency noise coupling into sensitive MPPT control circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH8R06DSame TO-220AC package, 600 V VRRM, but VF = 1.85 V (max) at 8 A; trr = 60 ns; RθJC = 2.5 °C/WSlightly higher conduction loss; lower surge rating (120 A IFSM); less robust thermal performanceAcceptable where margin exists on thermal budget and efficiency targets are relaxed
VS-8EWH06FN-M3TO-220AC, 600 V, VF = 1.75 V (max), trr = 75 ns, RθJC = 2.2 °C/W; AEC-Q101 qualifiedComparable electrical specs but higher VF and slightly slower recovery than HERA806GPreferred where Vishay supply chain alignment or dual-sourcing is required; verify layout compatibility due to minor leadframe variation

Compared with STTH8R06D and VS-8EWH06FN-M3, the HERA806G delivers superior thermal resistance (2 °C/W), tighter VF consistency (≤1.7 V), and higher surge tolerance (150 A), making it optimal for thermally constrained or high-reliability automotive and industrial converters.

Availability

HERA806G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching-mode inverters, and renewable-energy charge controllers requiring stable component supply, AEC-Q101 qualification, and consistent ultrafast rectification performance.

Supply support for HERA806G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in rectifiers, TVS diodes, MOSFETs, and automotive-qualified discrete devices.

The HERA806G belongs to TSC's high-efficiency ultrafast rectifier product line, engineered specifically for high-frequency switching power supplies in automotive, industrial, and renewable energy systems demanding low VF, fast trr, and robust thermal performance.

FAQ

What is the maximum junction temperature rating for the HERA806G?

The HERA806G has a maximum junction temperature (TJ MAX) of +150°C, verified per JEDEC standards. This rating allows operation in under-hood automotive environments and high-ambient industrial enclosures. Derating curves in the datasheet specify that average forward current drops to ~5.5 A at TC = 125°C, ensuring safe thermal margins when mounted on appropriately sized heatsinks.

Is the HERA806G pin-compatible with other devices in the HERA80xG family?

Yes, all HERA801G through HERA808G share identical TO-220AC packaging, pinout, and mechanical footprint. The HERA806G uses the same Anode–Cathode–Tab configuration and mounting dimensions as HERA804G or HERA808G, enabling voltage-scaling design reuse without PCB changes - provided thermal and voltage margin analysis confirms suitability for the target application.

Does the HERA806G meet AEC-Q101 requirements?

Yes, the HERA806G is AEC-Q101 qualified when ordered with the "H" suffix (HERA806GH). The standard HERA806G variant is not AEC-Q101 certified; only the "H" version undergoes full stress testing including HTGB, TCT, and mechanical shock per AEC-Q101 Rev D. Always verify ordering code suffix before automotive deployment.

What is the reverse leakage current specification for the HERA806G at elevated temperature?

At TJ = 125°C and rated VR = 600 V, the HERA806G exhibits a maximum reverse leakage current (IR) of 400 µA, measured per pulse test (PW = 30 ms). This value is critical for standby power loss in high-voltage hold-up circuits and remains well within typical design allowances for 600 V-class rectifiers operating in hot ambient conditions.

How does the HERA806G's junction capacitance affect high-frequency performance?

The HERA806G has a typical junction capacitance (CJ) of 55 pF at 1 MHz and VR = 4 V. This low capacitance minimizes displacement current during voltage transitions, reducing EMI generation and improving stability in >200 kHz SMPS designs. It also lowers capacitive turn-on loss compared to higher-CJ alternatives like HERA801G–805G (65 pF), especially in zero-voltage-switching auxiliary windings.

HERA806G C0G Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
80 ns
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Capacitance @ Vr, F:
55pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C

HERA806G C0G FAQ

1.How can I place an order for HERA806G C0G through Aetrix?

Please submit a Request for Quotation (RFQ) for HERA806G C0G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HERA806G C0G reliable?

The price and inventory of HERA806G C0G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERA806G C0G is usually 5 days.

3.What payment methods are accepted for HERA806G C0G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERA806G C0G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HERA806G C0G?

HERA806G C0G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HERA806G C0G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HERA806G C0G?

For technical support, including HERA806G C0G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERA806G C0G requirements.

6.How does Aetrix verify that HERA806G C0G is sourced from the original manufacturer or authorized distributors?

All HERA806G C0G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERA806G C0G meets industry standards.

7.What is the process for return or replacement of HERA806G C0G?

All HERA806G C0G units undergo pre-shipment inspection (PSI). If there is an issue with HERA806G C0G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HERA806G C0G part is unused and in its original packaging.

Return procedure for HERA806G C0G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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